22-GHz-Band Oscillator Using Integrated H-Shape Defected Ground Structure Resonator in 0.18-μ m CMOS Technology

Nusrat Jahan, Siti Amalina Enche Ab Rahim, Hamed Mosalam, Adel Barakat, Takana Kaho, Ramesh K. Pokharel

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A novel 22-GHz-band oscillator using an integrated defected ground structure (DGS) resonator is presented for quasi-millimeter waveband applications. The DGS is etched on the first metal layer (M1) below a 50-Ω microstrip line on the top metal layer (M6) of 0.18-μm one-poly six-metal (1P6M) complementary metal-oxide-semiconductor (CMOS) technology. The proposed oscillator is fabricated using 0.18-μm CMOS technology, and the measured carrier frequency and phase noise are 22.88 GHz and-129.21 dBc/Hz (-108.05 dBc/Hz) at 10-MHz (1 MHz) offset frequency, respectively. The power dissipation is 6 mW that results in a figure of merit to be-188.8 dB. As the DGS resonator could be designed at any high frequency, it may give an alternative design approach of high performance voltage controlled oscillator and frequency synthesizers at K-band and beyond, thus alleviates the problem of self-resonance that a spiral inductor usually encounters at higher frequency.

Original languageEnglish
Pages (from-to)233-235
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume28
Issue number3
DOIs
Publication statusPublished - Mar 2018

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of '22-GHz-Band Oscillator Using Integrated H-Shape Defected Ground Structure Resonator in 0.18-μ m CMOS Technology'. Together they form a unique fingerprint.

  • Cite this