22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

Kazutoshi Kato, S. Hata, A. Kozen, S. Oku, S. Matsumoto, J. Yoshida

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.

Original languageEnglish
Pages (from-to)1140-1142
Number of pages3
JournalElectronics Letters
Volume28
Issue number12
DOIs
Publication statusPublished - Jun 4 1992
Externally publishedYes

Fingerprint

Optical waveguides
Photodiodes
Waveguides

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure. / Kato, Kazutoshi; Hata, S.; Kozen, A.; Oku, S.; Matsumoto, S.; Yoshida, J.

In: Electronics Letters, Vol. 28, No. 12, 04.06.1992, p. 1140-1142.

Research output: Contribution to journalArticle

Kato, Kazutoshi ; Hata, S. ; Kozen, A. ; Oku, S. ; Matsumoto, S. ; Yoshida, J. / 22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure. In: Electronics Letters. 1992 ; Vol. 28, No. 12. pp. 1140-1142.
@article{644108a8e8fe495ebf07a0b2bdd30f01,
title = "22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure",
abstract = "A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.",
author = "Kazutoshi Kato and S. Hata and A. Kozen and S. Oku and S. Matsumoto and J. Yoshida",
year = "1992",
month = "6",
day = "4",
doi = "10.1049/el:19920719",
language = "English",
volume = "28",
pages = "1140--1142",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "12",

}

TY - JOUR

T1 - 22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

AU - Kato, Kazutoshi

AU - Hata, S.

AU - Kozen, A.

AU - Oku, S.

AU - Matsumoto, S.

AU - Yoshida, J.

PY - 1992/6/4

Y1 - 1992/6/4

N2 - A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.

AB - A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.

UR - http://www.scopus.com/inward/record.url?scp=0027111509&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027111509&partnerID=8YFLogxK

U2 - 10.1049/el:19920719

DO - 10.1049/el:19920719

M3 - Article

VL - 28

SP - 1140

EP - 1142

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 12

ER -