22GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

K. Kato, S. Hata, A. Kozen, S. Oku, S. Matsumoto, J. Yoshida

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiOj sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.

Original languageEnglish
Pages (from-to)1140-1142
Number of pages3
JournalElectronics Letters
Volume28
Issue number12
DOIs
Publication statusPublished - Jun 4 1992

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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