3-7 GHz low power wide-band common gate low noise amplifier in 0.18μm CMOS process

A. I A Galal, Ramesh Pokharel, Haruichi Kanaya, K. Yoshida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

An ultra-wide band low noise amplifier (LNA) is proposed. An UWB LNA from 3 7 GHz has been designed exploiting the wide band input matching of common gate and the high gain of cascode amplifier. The LNA has been fabricated in the standard 0.18μm CMOS process. The measured gain is 11.5dB from 3 GHz to 7 GHz, and noise figure is 3.5 dB. The measured input and output return loss is less than 11 dB of the entire band. The measured input third-order intercept point IIP3 is 2.5 dBm at 4 GHz. It consumes 9 mW from 1.8 V supply voltage.

Original languageEnglish
Title of host publication2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
Pages342-345
Number of pages4
Publication statusPublished - 2010
Event2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan
Duration: Dec 7 2010Dec 10 2010

Other

Other2010 Asia-Pacific Microwave Conference, APMC 2010
CountryJapan
CityYokohama
Period12/7/1012/10/10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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