TY - JOUR
T1 - 325 nm-laser-excited micro-photoluminescence for strained Si films
AU - Wang, Dong
AU - Yang, Haigui
AU - Kitamura, Tokuhide
AU - Nakashima, Hiroshi
N1 - Funding Information:
This study was supported in part by a grant for the Knowledge Cluster Initiative implemented by the Ministry of Education, Culture, Sports, Science and Technology of Japan .
PY - 2010/2/26
Y1 - 2010/2/26
N2 - Low-temperature micro-photoluminescence (PL) was performed for strained Si (sSi) films by 325 nm-laser excitation at 8.5 K. All of the sSi films were thicker than the penetration depth (dp) of the 325-nm line for Si. The dependence of the PL spectra on the strain condition was studied by comparing dp to the thickness of the strained part (ts), which varied in the sSi film plane. Under the condition ts > dp, the strained-part-related PL (PL-S) was observed, but not the unstrained-part-related PL (PL-US). Under the condition ts < dp, PL-US appeared and its intensity negatively depended on ts, while the intensity of PL-S positively depended on ts. Under the condition of a very small ts, PL-S was never observed. These phenomena were explained by exciton behaviors in sSi film with a band-gap distribution, and enable a deeper understanding of PL characteristics in a relatively large-scale sample with a depth distribution of strain.
AB - Low-temperature micro-photoluminescence (PL) was performed for strained Si (sSi) films by 325 nm-laser excitation at 8.5 K. All of the sSi films were thicker than the penetration depth (dp) of the 325-nm line for Si. The dependence of the PL spectra on the strain condition was studied by comparing dp to the thickness of the strained part (ts), which varied in the sSi film plane. Under the condition ts > dp, the strained-part-related PL (PL-S) was observed, but not the unstrained-part-related PL (PL-US). Under the condition ts < dp, PL-US appeared and its intensity negatively depended on ts, while the intensity of PL-S positively depended on ts. Under the condition of a very small ts, PL-S was never observed. These phenomena were explained by exciton behaviors in sSi film with a band-gap distribution, and enable a deeper understanding of PL characteristics in a relatively large-scale sample with a depth distribution of strain.
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U2 - 10.1016/j.tsf.2009.09.124
DO - 10.1016/j.tsf.2009.09.124
M3 - Article
AN - SCOPUS:76049123491
VL - 518
SP - 2470
EP - 2473
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 9
ER -