3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, W. Saito, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Full integration of a back-gate-controlled IGBT (BC-IGBT), which comprises top and bottom independently controlled MOS gates, is experimentally demonstrated. By using the back side MOS gate for accelerating electron drain and blocking of hole injection, more than 60% reduction of turn-off loss was achieved. Instead of the conventional wafer bonding approach, a cost effective process flow using double side lithography has been developed and used. Thanks to the process flexibility, back side design was carefully optimized to achieve stable operation and manufacturability, in addition to low switching loss. BC-IGBT will provide a new technological option for expanding the applicable switching frequency / voltage range of Si power devices.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages5.3.1-5.3.4
ISBN (Electronic)9781728188881
DOIs
Publication statusPublished - Dec 12 2020
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: Dec 12 2020Dec 18 2020

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
CountryUnited States
CityVirtual, San Francisco
Period12/12/2012/18/20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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