3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, W. Saito, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

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