3300V Scaled IGBTs Driven by 5V Gate Voltage

Takuya Saraya; Kazuo Itou; Toshihiko Takakura; Munetoshi Fukui; Shinichi Suzuki; Kiyoshi Takeuchi; Masanori Tsukuda; Yohichiroh Numasawa; Katsumi Satoh; Tomoko Matsudai; Wataru Saito; Kuniyuki Kakushima; Takuya Hoshii; Kazuyoshi Furukawa; Masahiro Watanabe; Naoyuki Shigyo; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; Atsushi Ogura; Shin Ichi Nishizawa; Ichiro Omura; Hiromichi Ohashi; Toshiro Hiramoto

doi:10.1109/ISPSD.2019.8757626

3300V Scaled IGBTs Driven by 5V Gate Voltage

Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi OguraShin Ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto

Renewable Energy Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

In this work, 5V gate drive 3300V IGBTs, designed based on a scaling principle, have been demonstrated. Turn-off characteristics without noticeable degradation in the gate voltage waveforms were confirmed. Turn-off tail current of the scaled devices significantly decreased than conventional 15V-driven devices. As a result of both V_ce and turn-off loss reduction, 35% improvement in E_off vs V_cesat relationship was achieved.

Original language	English
Title of host publication	2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	43-46
Number of pages	4
ISBN (Electronic)	9781728105796
DOIs	https://doi.org/10.1109/ISPSD.2019.8757626
Publication status	Published - May 2019
Event	31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 - Shanghai, China Duration: May 19 2019 → May 23 2019

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2019-May
ISSN (Print)	1063-6854

Conference

Conference	31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
Country/Territory	China
City	Shanghai
Period	5/19/19 → 5/23/19

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/ISPSD.2019.8757626

Cite this

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Iwai, H., ... Hiramoto, T. (2019). 3300V Scaled IGBTs Driven by 5V Gate Voltage. In 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 (pp. 43-46). [8757626] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2019.8757626

3300V Scaled IGBTs Driven by 5V Gate Voltage. / Saraya, Takuya; Itou, Kazuo; Takakura, Toshihiko et al.

2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 43-46 8757626 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saraya, T, Itou, K, Takakura, T, Fukui, M, Suzuki, S, Takeuchi, K, Tsukuda, M, Numasawa, Y, Satoh, K, Matsudai, T, Saito, W, Kakushima, K, Hoshii, T, Furukawa, K, Watanabe, M, Shigyo, N, Wakabayashi, H, Tsutsui, K, Iwai, H, Ogura, A, Nishizawa, SI, Omura, I, Ohashi, H & Hiramoto, T 2019, 3300V Scaled IGBTs Driven by 5V Gate Voltage. in 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019., 8757626, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2019-May, Institute of Electrical and Electronics Engineers Inc., pp. 43-46, 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, Shanghai, China, 5/19/19. https://doi.org/10.1109/ISPSD.2019.8757626

Saraya T, Itou K, Takakura T, Fukui M, Suzuki S, Takeuchi K et al. 3300V Scaled IGBTs Driven by 5V Gate Voltage. In 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 43-46. 8757626. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2019.8757626

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abstract = "In this work, 5V gate drive 3300V IGBTs, designed based on a scaling principle, have been demonstrated. Turn-off characteristics without noticeable degradation in the gate voltage waveforms were confirmed. Turn-off tail current of the scaled devices significantly decreased than conventional 15V-driven devices. As a result of both Vce and turn-off loss reduction, 35% improvement in Eoff vs Vcesat relationship was achieved.",

author = "Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Masanori Tsukuda and Yohichiroh Numasawa and Katsumi Satoh and Tomoko Matsudai and Wataru Saito and Kuniyuki Kakushima and Takuya Hoshii and Kazuyoshi Furukawa and Masahiro Watanabe and Naoyuki Shigyo and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Nishizawa, {Shin Ichi} and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramoto",

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AU - Takeuchi, Kiyoshi

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AB - In this work, 5V gate drive 3300V IGBTs, designed based on a scaling principle, have been demonstrated. Turn-off characteristics without noticeable degradation in the gate voltage waveforms were confirmed. Turn-off tail current of the scaled devices significantly decreased than conventional 15V-driven devices. As a result of both Vce and turn-off loss reduction, 35% improvement in Eoff vs Vcesat relationship was achieved.

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3300V Scaled IGBTs Driven by 5V Gate Voltage

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