3300V Scaled IGBTs Driven by 5V Gate Voltage

Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi OguraShin Ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, 5V gate drive 3300V IGBTs, designed based on a scaling principle, have been demonstrated. Turn-off characteristics without noticeable degradation in the gate voltage waveforms were confirmed. Turn-off tail current of the scaled devices significantly decreased than conventional 15V-driven devices. As a result of both Vce and turn-off loss reduction, 35% improvement in Eoff vs Vcesat relationship was achieved.

Original languageEnglish
Title of host publication2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages43-46
Number of pages4
ISBN (Electronic)9781728105796
DOIs
Publication statusPublished - May 2019
Event31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 - Shanghai, China
Duration: May 19 2019May 23 2019

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2019-May
ISSN (Print)1063-6854

Conference

Conference31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
CountryChina
CityShanghai
Period5/19/195/23/19

Fingerprint

Insulated gate bipolar transistors (IGBT)
Degradation
Electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., ... Hiramoto, T. (2019). 3300V Scaled IGBTs Driven by 5V Gate Voltage. In 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 (pp. 43-46). [8757626] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2019.8757626

3300V Scaled IGBTs Driven by 5V Gate Voltage. / Saraya, Takuya; Itou, Kazuo; Takakura, Toshihiko; Fukui, Munetoshi; Suzuki, Shinichi; Takeuchi, Kiyoshi; Tsukuda, Masanori; Numasawa, Yohichiroh; Satoh, Katsumi; Matsudai, Tomoko; Saito, Wataru; Kakushima, Kuniyuki; Hoshii, Takuya; Furukawa, Kazuyoshi; Watanabe, Masahiro; Shigyo, Naoyuki; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Iwai, Hiroshi; Ogura, Atsushi; Nishizawa, Shin Ichi; Omura, Ichiro; Ohashi, Hiromichi; Hiramoto, Toshiro.

2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 43-46 8757626 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Saraya, T, Itou, K, Takakura, T, Fukui, M, Suzuki, S, Takeuchi, K, Tsukuda, M, Numasawa, Y, Satoh, K, Matsudai, T, Saito, W, Kakushima, K, Hoshii, T, Furukawa, K, Watanabe, M, Shigyo, N, Wakabayashi, H, Tsutsui, K, Iwai, H, Ogura, A, Nishizawa, SI, Omura, I, Ohashi, H & Hiramoto, T 2019, 3300V Scaled IGBTs Driven by 5V Gate Voltage. in 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019., 8757626, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2019-May, Institute of Electrical and Electronics Engineers Inc., pp. 43-46, 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, Shanghai, China, 5/19/19. https://doi.org/10.1109/ISPSD.2019.8757626
Saraya T, Itou K, Takakura T, Fukui M, Suzuki S, Takeuchi K et al. 3300V Scaled IGBTs Driven by 5V Gate Voltage. In 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 43-46. 8757626. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2019.8757626
Saraya, Takuya ; Itou, Kazuo ; Takakura, Toshihiko ; Fukui, Munetoshi ; Suzuki, Shinichi ; Takeuchi, Kiyoshi ; Tsukuda, Masanori ; Numasawa, Yohichiroh ; Satoh, Katsumi ; Matsudai, Tomoko ; Saito, Wataru ; Kakushima, Kuniyuki ; Hoshii, Takuya ; Furukawa, Kazuyoshi ; Watanabe, Masahiro ; Shigyo, Naoyuki ; Wakabayashi, Hitoshi ; Tsutsui, Kazuo ; Iwai, Hiroshi ; Ogura, Atsushi ; Nishizawa, Shin Ichi ; Omura, Ichiro ; Ohashi, Hiromichi ; Hiramoto, Toshiro. / 3300V Scaled IGBTs Driven by 5V Gate Voltage. 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 43-46 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).
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