380V/1.9A GaN power-HEMT: Current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier

Wataru Saito; Masahiko Kuraguchi; Yoshiharu Takada; Kunio Tsuda; Tomokazu Domon; Ichiro Omura; Masakazu Yamaguchi

380V/1.9A GaN power-HEMT: Current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Tomokazu Domon, Ichiro Omura, Masakazu Yamaguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The current collapse phenomena in 380V/1.9A GaN power-HEMTs designed for high-voltage power electronics application is reported. The influence of these phenomena to the power-electronics circuit performance under high applied voltage is discussed using a 27.1 MHz class-E amplifier, which can be one of an industrial application candidate. It has been found that the optimized field plate structure minimizes the increase of conduction loss caused by the current collapse phenomena and thus improves the power efficiency of the circuit. The minimized device achieved the output power of 13.8 W and the power efficiency of 89.6 % for the demonstrated circuit even with the applied drain voltage of 330 V and the switching frequency of 27.1 MHz. These results show the future possibility of a new GaN-device application with both high voltage and high frequency condition.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	586-589
Number of pages	4
Publication status	Published - Dec 1 2005
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: Dec 5 2005 → Dec 7 2005

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005
ISSN (Print)	0163-1918

Other

Other	IEEE International Electron Devices Meeting, 2005 IEDM
Country/Territory	United States
City	Washington, DC, MD
Period	12/5/05 → 12/7/05

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Saito, W., Kuraguchi, M., Takada, Y., Tsuda, K., Domon, T., Omura, I., & Yamaguchi, M. (2005). 380V/1.9A GaN power-HEMT: Current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 586-589). [1609415] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

380V/1.9A GaN power-HEMT : Current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier. / Saito, Wataru; Kuraguchi, Masahiko; Takada, Yoshiharu et al.

IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 586-589 1609415 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saito, W, Kuraguchi, M, Takada, Y, Tsuda, K, Domon, T, Omura, I & Yamaguchi, M 2005, 380V/1.9A GaN power-HEMT: Current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609415, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 586-589, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 12/5/05.

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abstract = "The current collapse phenomena in 380V/1.9A GaN power-HEMTs designed for high-voltage power electronics application is reported. The influence of these phenomena to the power-electronics circuit performance under high applied voltage is discussed using a 27.1 MHz class-E amplifier, which can be one of an industrial application candidate. It has been found that the optimized field plate structure minimizes the increase of conduction loss caused by the current collapse phenomena and thus improves the power efficiency of the circuit. The minimized device achieved the output power of 13.8 W and the power efficiency of 89.6 % for the demonstrated circuit even with the applied drain voltage of 330 V and the switching frequency of 27.1 MHz. These results show the future possibility of a new GaN-device application with both high voltage and high frequency condition.",

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AU - Omura, Ichiro

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AB - The current collapse phenomena in 380V/1.9A GaN power-HEMTs designed for high-voltage power electronics application is reported. The influence of these phenomena to the power-electronics circuit performance under high applied voltage is discussed using a 27.1 MHz class-E amplifier, which can be one of an industrial application candidate. It has been found that the optimized field plate structure minimizes the increase of conduction loss caused by the current collapse phenomena and thus improves the power efficiency of the circuit. The minimized device achieved the output power of 13.8 W and the power efficiency of 89.6 % for the demonstrated circuit even with the applied drain voltage of 330 V and the switching frequency of 27.1 MHz. These results show the future possibility of a new GaN-device application with both high voltage and high frequency condition.

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380V/1.9A GaN power-HEMT: Current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier

Abstract

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