380V/1.9A GaN power-HEMT: Current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Tomokazu Domon, Ichiro Omura, Masakazu Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

The current collapse phenomena in 380V/1.9A GaN power-HEMTs designed for high-voltage power electronics application is reported. The influence of these phenomena to the power-electronics circuit performance under high applied voltage is discussed using a 27.1 MHz class-E amplifier, which can be one of an industrial application candidate. It has been found that the optimized field plate structure minimizes the increase of conduction loss caused by the current collapse phenomena and thus improves the power efficiency of the circuit. The minimized device achieved the output power of 13.8 W and the power efficiency of 89.6 % for the demonstrated circuit even with the applied drain voltage of 330 V and the switching frequency of 27.1 MHz. These results show the future possibility of a new GaN-device application with both high voltage and high frequency condition.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages586-589
Number of pages4
Publication statusPublished - Dec 1 2005
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: Dec 5 2005Dec 7 2005

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period12/5/0512/7/05

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Saito, W., Kuraguchi, M., Takada, Y., Tsuda, K., Domon, T., Omura, I., & Yamaguchi, M. (2005). 380V/1.9A GaN power-HEMT: Current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 586-589). [1609415] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).