3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates

Lijun Liu, Koichi Kakimoto

Research output: Contribution to journalConference article

14 Citations (Scopus)

Abstract

A series of computations were performed for Czochralski silicon crystal growth in a transverse magnetic field with different crystal growth rates by using a recently developed three-dimensional global model. The effects of the transverse magnetic field and crystal growth rate on the melt-crystal interface were numerically investigated. It was found that the interface shape is three-dimensional when the crystal is not rotating, while it becomes nearly two-dimensional when the crystal is rotating, even at a low rotation rate. The temperature gradient in the axial direction at the melt-crystal interface increases with increase in crystal growth rate except near the crystal edge, where it changes oppositely.

Original languageEnglish
Pages (from-to)e1521-e1526
JournalJournal of Crystal Growth
Volume275
Issue number1-2
DOIs
Publication statusPublished - Feb 15 2005

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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