Abstract
A series of computations were performed for Czochralski silicon crystal growth in a transverse magnetic field with different crystal growth rates by using a recently developed three-dimensional global model. The effects of the transverse magnetic field and crystal growth rate on the melt-crystal interface were numerically investigated. It was found that the interface shape is three-dimensional when the crystal is not rotating, while it becomes nearly two-dimensional when the crystal is rotating, even at a low rotation rate. The temperature gradient in the axial direction at the melt-crystal interface increases with increase in crystal growth rate except near the crystal edge, where it changes oppositely.
Original language | English |
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Pages (from-to) | e1521-e1526 |
Journal | Journal of Crystal Growth |
Volume | 275 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - Feb 15 2005 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry