3D global analysis of CZ-Si growth in a transverse magnetic field with rotating crucible and crystal

Lijun Liu, Koichi Kakimoto

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

Three-dimensional global simulations were carried out for a small Czochralski furnace for silicon crystal growth with a recently developed global model. The furnace is placed in a transverse magnetic field with rotating crucible and crystal. The convective, conductive and radiative heat transfers in the entire furnace were solved in a three-dimensionally conjugated way. Three-dimensional distributions of temperature and velocity were analyzed. The melt-crystal interface was found to have nearly rotational symmetry, and the azimuthal non-uniformity of temperature is much weaker on the crystal and crucible sidewalls in the case of high rotation rates of crucible and crystal than in the case of non-rotating crucible and crystal.

Original languageEnglish
Pages (from-to)347-351
Number of pages5
JournalCrystal Research and Technology
Volume40
Issue number4-5
DOIs
Publication statusPublished - Apr 1 2005

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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