3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

Xue Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto

Research output: Contribution to journalArticle

Abstract

In this paper, a three-dimensional global heat transfer model to describe the floating zone of silicon single-crystal growth is proposed. The steady-state calculations considering argon gas flow, feed rod, silicon melt and crystal are carried out using open source software OpenFOAM with no assumptions of symmetry. From the global calculation, a three dimensional solid-liquid interface has been obtained. Furthermore, the cooling effect of gas flow in three dimensions is considered, and the three-dimensional current-density distribution of the inductor is calculated. By considering the asymmetrical electromagnetic field induced by the inductor, the calculations reveal a deflection of the asymmetrical solid-liquid interface.

Original languageEnglish
Article number1700246
JournalCrystal Research and Technology
Volume53
Issue number5
DOIs
Publication statusPublished - May 1 2018

Fingerprint

Silicon
Crystallization
Crystal growth
floating
crystal growth
heat transfer
Single crystals
inductors
liquid-solid interfaces
Heat transfer
gas flow
Flow of gases
single crystals
silicon
Argon
Liquids
Electromagnetic fields
density distribution
deflection
electromagnetic fields

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth. / Han, Xue Feng; Liu, Xin; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Kakimoto, Koichi.

In: Crystal Research and Technology, Vol. 53, No. 5, 1700246, 01.05.2018.

Research output: Contribution to journalArticle

Han, Xue Feng ; Liu, Xin ; Nakano, Satoshi ; Harada, Hirofumi ; Miyamura, Yoshiji ; Kakimoto, Koichi. / 3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth. In: Crystal Research and Technology. 2018 ; Vol. 53, No. 5.
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