3d numerical analysis of the asymmetric three-phase line of floating zone for silicon crystal growth

Xue Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto

Research output: Contribution to journalArticle

Abstract

A numerical simulation has been carried out to study the asymmetric heat transfer, fluid flow, and three-phase line to explain the phenomenon of the spillage of the melt in floating zone (FZ) silicon growth. A three-dimensional high-frequency electromagnetic (EM) field is coupled with the heat transfer in the melt and crystal calculation domains. The current density along the three-phase line is investigated to demonstrate the inhomogeneous heating along the three-phase line. The asymmetric heating is found to affect the flow pattern and temperature distribution of the melt. The three-dimensional solid–liquid interface results show that, below the current supplies, the interface is deflected due to strong heating below the current supplies. The calculated asymmetric three-phase line shows a similar trend as the experimentally observed results. The results indicate that the re-melting and spillage phenomenon could occur below the current supplies.

Original languageEnglish
Article number121
JournalCrystals
Volume10
Issue number2
DOIs
Publication statusPublished - Feb 2020

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Inorganic Chemistry

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