3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells

X. J. Chen, S. Nakano, Koichi Kakimoto

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on thermal stress and dislocations in a silicon ingot during a solidification process using a three-dimensional global analysis. It was found that the mc interface shape and the temperature gradient in a silicon ingot have significant influence on thermal stress and dislocations due to different thermal conductivity of the wall of a crucible. Therefore, we should control not only the mc interface shape, but also temperature gradient in a silicon ingot in order to reduce thermal stress and dislocations in a silicon ingot during a solidification process.

Original languageEnglish
Pages (from-to)259-264
Number of pages6
JournalJournal of Crystal Growth
Volume318
Issue number1
DOIs
Publication statusPublished - Mar 1 2011

Fingerprint

Crucibles
ingots
Silicon
crucibles
Ingots
numerical analysis
Numerical analysis
Materials properties
Solar cells
thermal stresses
solar cells
Thermal stress
silicon
Thermal gradients
solidification
Solidification
Thermal conductivity
temperature gradients
thermal conductivity

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells. / Chen, X. J.; Nakano, S.; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 318, No. 1, 01.03.2011, p. 259-264.

Research output: Contribution to journalArticle

@article{6eed3dd741694105b45ba43e2b22539f,
title = "3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells",
abstract = "We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on thermal stress and dislocations in a silicon ingot during a solidification process using a three-dimensional global analysis. It was found that the mc interface shape and the temperature gradient in a silicon ingot have significant influence on thermal stress and dislocations due to different thermal conductivity of the wall of a crucible. Therefore, we should control not only the mc interface shape, but also temperature gradient in a silicon ingot in order to reduce thermal stress and dislocations in a silicon ingot during a solidification process.",
author = "Chen, {X. J.} and S. Nakano and Koichi Kakimoto",
year = "2011",
month = "3",
day = "1",
doi = "10.1016/j.jcrysgro.2010.10.067",
language = "English",
volume = "318",
pages = "259--264",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - 3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells

AU - Chen, X. J.

AU - Nakano, S.

AU - Kakimoto, Koichi

PY - 2011/3/1

Y1 - 2011/3/1

N2 - We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on thermal stress and dislocations in a silicon ingot during a solidification process using a three-dimensional global analysis. It was found that the mc interface shape and the temperature gradient in a silicon ingot have significant influence on thermal stress and dislocations due to different thermal conductivity of the wall of a crucible. Therefore, we should control not only the mc interface shape, but also temperature gradient in a silicon ingot in order to reduce thermal stress and dislocations in a silicon ingot during a solidification process.

AB - We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on thermal stress and dislocations in a silicon ingot during a solidification process using a three-dimensional global analysis. It was found that the mc interface shape and the temperature gradient in a silicon ingot have significant influence on thermal stress and dislocations due to different thermal conductivity of the wall of a crucible. Therefore, we should control not only the mc interface shape, but also temperature gradient in a silicon ingot in order to reduce thermal stress and dislocations in a silicon ingot during a solidification process.

UR - http://www.scopus.com/inward/record.url?scp=79952735749&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952735749&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2010.10.067

DO - 10.1016/j.jcrysgro.2010.10.067

M3 - Article

AN - SCOPUS:79952735749

VL - 318

SP - 259

EP - 264

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -