3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon

Xue Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto

Research output: Contribution to journalArticle

Abstract

In FZ growth processes, the stability of the free surface is important in the production of single crystal silicon with high quality. To investigate the shape of the free surface in the FZ silicon crystal growth, a 3D numerical model that included gas and liquid phases was developed. In this present study, 3D Young-Laplacian equations have been solved using the Volume of Fluid (VOF) Model. Using this new model, we predicted the 3D shape of the free surface in FZ silicon crystal growth. The effect of magnetic pressure on shape of free surface has been considered. In particular, the free surface of the eccentric growth model, which could not be previously solved using the 2D Young-Laplacian equations, was solved using the VOF model. The calculation results are validated by the experimental results.

Original languageEnglish
Pages (from-to)269-274
Number of pages6
JournalJournal of Crystal Growth
Volume483
DOIs
Publication statusPublished - Feb 1 2018

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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