3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth

Xue Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto

Research output: Contribution to journalArticle

Abstract

In this paper, we propose a three-dimensional model for a 200 mm floating zone silicon crystal growth process to investigate the fluid flow and solid–liquid interface. To study the effect of high-frequency (HF) electromagnetic (EM) heating on the melt flow and interface shape, HF-EM and heat transfer calculations were conducted in three dimensions. Through comparison of EM and Marangoni forces, EM force was found to have a larger effect than Marangoni force on the free surface flow. By considering 3D Marangoni and EM forces at the free surface, a more accurate melt flow distribution has been obtained. Moreover, the results showed that local growth rate became more inhomogeneous when the rotation speed of the crystal was increased. However, a more homogeneous three-phase line could be obtained with a high rotational crystal speed.

Original languageEnglish
Article number125403
JournalJournal of Crystal Growth
Volume532
DOIs
Publication statusPublished - Feb 15 2020

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Silicon
Crystallization
Crystal growth
floating
crystal growth
electromagnetism
Crystals
silicon
Flow of fluids
Heat transfer
Heating
three dimensional models
fluid flow
crystals
flow distribution
heat transfer
heating

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth. / Han, Xue Feng; Liu, Xin; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 532, 125403, 15.02.2020.

Research output: Contribution to journalArticle

Han, Xue Feng ; Liu, Xin ; Nakano, Satoshi ; Harada, Hirofumi ; Miyamura, Yoshiji ; Kakimoto, Koichi. / 3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth. In: Journal of Crystal Growth. 2020 ; Vol. 532.
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