3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)

K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. OmuraH. Ohashi, H. Iwai

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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    Earth and Planetary Sciences