40-Gbit/s monolithic digital OEIC module composed of uni-traveling-carrier photodiode and InP HEMT decision circuit

K. Murata, H. Kitabayashi, N. Shimizu, S. Kimura, T. Furuta, N. Watanabe, E. Sano

Research output: Contribution to journalConference article

8 Citations (Scopus)


The authors describe an optoelectronic decision IC that is a monolithic combination of a uni-traveling-carrier photodiode and 0.1-μm InAlAs/InGaAs/InP HEMTs for broadband optical fiber communication systems. The fabricated chip is packaged as an OEIC module, and 40-Gbit/s error-free operation is confirmed for an RZ data stream at the clock rate of 40 GHz for the first time.

Original languageEnglish
Pages (from-to)345-348
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - Dec 11 2000
Externally publishedYes
EventProceedings of the 1999 IEEE MTT-S International Microwave Symposium - Boston, MA, USA
Duration: Jun 11 2000Jun 16 2000


All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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