40-Gb/s-class InP HEMT ICs for very-high-speed optical communications

Yuhki Imai, Makoto Nakamura, Shunji Kimura, Yohtaro Umeda, Takatomo Enoki

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)

Abstract

40-Gb/s-class analog indium phosphide high electron mobility transistor integrated circuits used to build high-speed optical receivers are described. Four kinds of ICs are covered: a preamplifier, a baseband amplifier, a limiting amplifier, and a Gilbert cell.

Original languageEnglish
Pages (from-to)89-92
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - Jan 1 1995
Externally publishedYes
EventProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
Duration: May 9 1995May 13 1995

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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