40-Gb/s-class InP HEMT ICs for very-high-speed optical communications

Yuhki Imai; Makoto Nakamura; Shunji Kimura; Yohtaro Umeda; Takatomo Enoki

40-Gb/s-class InP HEMT ICs for very-high-speed optical communications

Yuhki Imai, Makoto Nakamura, Shunji Kimura, Yohtaro Umeda, Takatomo Enoki

Research output: Contribution to journal › Conference article › peer-review

Abstract

40-Gb/s-class analog indium phosphide high electron mobility transistor integrated circuits used to build high-speed optical receivers are described. Four kinds of ICs are covered: a preamplifier, a baseband amplifier, a limiting amplifier, and a Gilbert cell.

Original language	English
Pages (from-to)	89-92
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - Jan 1 1995
Externally published	Yes
Event	Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn Duration: May 9 1995 → May 13 1995

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "40-Gb/s-class InP HEMT ICs for very-high-speed optical communications",

abstract = "40-Gb/s-class analog indium phosphide high electron mobility transistor integrated circuits used to build high-speed optical receivers are described. Four kinds of ICs are covered: a preamplifier, a baseband amplifier, a limiting amplifier, and a Gilbert cell.",

author = "Yuhki Imai and Makoto Nakamura and Shunji Kimura and Yohtaro Umeda and Takatomo Enoki",

year = "1995",

month = jan,

day = "1",

language = "English",

pages = "89--92",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 7th International Conference on Indium Phosphide and Related Materials ; Conference date: 09-05-1995 Through 13-05-1995",

}

TY - JOUR

T1 - 40-Gb/s-class InP HEMT ICs for very-high-speed optical communications

AU - Imai, Yuhki

AU - Nakamura, Makoto

AU - Kimura, Shunji

AU - Umeda, Yohtaro

AU - Enoki, Takatomo

PY - 1995/1/1

Y1 - 1995/1/1

N2 - 40-Gb/s-class analog indium phosphide high electron mobility transistor integrated circuits used to build high-speed optical receivers are described. Four kinds of ICs are covered: a preamplifier, a baseband amplifier, a limiting amplifier, and a Gilbert cell.

AB - 40-Gb/s-class analog indium phosphide high electron mobility transistor integrated circuits used to build high-speed optical receivers are described. Four kinds of ICs are covered: a preamplifier, a baseband amplifier, a limiting amplifier, and a Gilbert cell.

UR - http://www.scopus.com/inward/record.url?scp=0029225967&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029225967&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029225967

SN - 1092-8669

SP - 89

EP - 92

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 7th International Conference on Indium Phosphide and Related Materials

Y2 - 9 May 1995 through 13 May 1995

ER -

40-Gb/s-class InP HEMT ICs for very-high-speed optical communications

Abstract

All Science Journal Classification (ASJC) codes

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