This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future light*-wave communications systems. A 0.1-μm gate InAlAs/InGa-As high electron mobility transistors (HEMT's) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated IC's demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gb/s.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering