40-Gb/s IC's for future lightwave communications systems

Taiichii Otsuji, Yuhki Imai, Eiichi Sano, Shunji Kimura, Satoshi Yamaguchi, Mikio Yoneyama, Takatomo Enoki, Yohtaro Umeda

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future light*-wave communications systems. A 0.1-μm gate InAlAs/InGa-As high electron mobility transistors (HEMT's) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated IC's demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gb/s.

Original languageEnglish
Pages (from-to)1363-1369
Number of pages7
JournalIEEE Journal of Solid-State Circuits
Volume32
Issue number9
DOIs
Publication statusPublished - Sep 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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