40-Gb/s IC's for future lightwave communications systems

Taiichii Otsuji; Yuhki Imai; Eiichi Sano; Shunji Kimura; Satoshi Yamaguchi; Mikio Yoneyama; Takatomo Enoki; Yohtaro Umeda

doi:10.1109/4.628741

40-Gb/s IC's for future lightwave communications systems

Taiichii Otsuji, Yuhki Imai, Eiichi Sano, Shunji Kimura, Satoshi Yamaguchi, Mikio Yoneyama, Takatomo Enoki, Yohtaro Umeda

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future light*-wave communications systems. A 0.1-μm gate InAlAs/InGa-As high electron mobility transistors (HEMT's) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated IC's demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gb/s.

Original language	English
Pages (from-to)	1363-1369
Number of pages	7
Journal	IEEE Journal of Solid-State Circuits
Volume	32
Issue number	9
DOIs	https://doi.org/10.1109/4.628741
Publication status	Published - Sept 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/4.628741

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@article{9d31e26eea2640698bb432c767cced1e,

title = "40-Gb/s IC's for future lightwave communications systems",

abstract = "This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future light*-wave communications systems. A 0.1-μm gate InAlAs/InGa-As high electron mobility transistors (HEMT's) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated IC's demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gb/s.",

author = "Taiichii Otsuji and Yuhki Imai and Eiichi Sano and Shunji Kimura and Satoshi Yamaguchi and Mikio Yoneyama and Takatomo Enoki and Yohtaro Umeda",

year = "1997",

month = sep,

doi = "10.1109/4.628741",

language = "English",

volume = "32",

pages = "1363--1369",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - 40-Gb/s IC's for future lightwave communications systems

AU - Otsuji, Taiichii

AU - Imai, Yuhki

AU - Sano, Eiichi

AU - Kimura, Shunji

AU - Yamaguchi, Satoshi

AU - Yoneyama, Mikio

AU - Enoki, Takatomo

AU - Umeda, Yohtaro

PY - 1997/9

Y1 - 1997/9

N2 - This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future light*-wave communications systems. A 0.1-μm gate InAlAs/InGa-As high electron mobility transistors (HEMT's) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated IC's demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gb/s.

AB - This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future light*-wave communications systems. A 0.1-μm gate InAlAs/InGa-As high electron mobility transistors (HEMT's) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated IC's demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gb/s.

UR - http://www.scopus.com/inward/record.url?scp=0031233818&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031233818&partnerID=8YFLogxK

U2 - 10.1109/4.628741

DO - 10.1109/4.628741

M3 - Article

AN - SCOPUS:0031233818

SN - 0018-9200

VL - 32

SP - 1363

EP - 1369

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 9

ER -

40-Gb/s IC's for future lightwave communications systems

Abstract

All Science Journal Classification (ASJC) codes

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