400 °c Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization

Hiroshi Kanno, Tomohisa Aoki, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Au-induced low-temperature (400 °C) crystallization of amorphous-Si1-xGex (x: 0-1) thin films on SiO2 has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 μm/h was obtained in all Ge fractions. As a result, strain-free poly-Si1-xGex with large areas (>20 μm) were obtained at a low temperature (400 °C). These new polycrystalline SiGe films on insulator could be used for advanced system in display and three-dimensional ULSI.

Original languageEnglish
Pages (from-to)79-82
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume8
Issue number1-3 SPEC. ISS.
DOIs
Publication statusPublished - Feb 1 2005

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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