4×4 GaAs /AlGaAs Optical Matrix Switches with Uniform Device Characteristics Using Alternating ΔΒ Electrooptic Guided-Wave Directional Couplers

Keiro Komatsu, Kiichi Hamamoto, Mitsunori Sugimoto, Akira Ajisawa, Yuji Kohga, Akira Suzuki

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The optical matrix switch is one of the key devices for future photonic switching systems. Several kinds of discrete semiconductor optical switches have been studied. However, up to the present, only a few investigations have been made on the integrated semiconductor matrix switch. The authors have recently realized integrated 4×4 GaAs/AlGaAs optical matrix switches constructed from 12 electrooptic directional couplers. In order to achieve uniform device characteristics, molecular beam epitaxy (MBE) and reactive ion beam etching (RIBE) were chosen as crystal growth technique and waveguide fabrication technique, respectively, in addition to the simplified tree structure as a matrix switch architecture. As a result, matrix switches with quite uniform device characteristics, such as small switching voltage deviation of 9.0 ± 0.5 V for ⊗ state and 21.9 ± 1.5 V for ⊖ state and little path dependence in ±0.5-dB propagation loss, have been realized for the first time.

Original languageEnglish
Pages (from-to)871-878
Number of pages8
JournalJournal of Lightwave Technology
Volume9
Issue number7
DOIs
Publication statusPublished - Jul 1991
Externally publishedYes

Fingerprint

directional couplers
electro-optics
aluminum gallium arsenides
switches
matrices
optical switching
crystal growth
molecular beam epitaxy
ion beams
etching
waveguides
deviation
fabrication
propagation
electric potential

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

4×4 GaAs /AlGaAs Optical Matrix Switches with Uniform Device Characteristics Using Alternating ΔΒ Electrooptic Guided-Wave Directional Couplers. / Komatsu, Keiro; Hamamoto, Kiichi; Sugimoto, Mitsunori; Ajisawa, Akira; Kohga, Yuji; Suzuki, Akira.

In: Journal of Lightwave Technology, Vol. 9, No. 7, 07.1991, p. 871-878.

Research output: Contribution to journalArticle

@article{181dc64eb70a466693748950dc2c4bf2,
title = "4×4 GaAs /AlGaAs Optical Matrix Switches with Uniform Device Characteristics Using Alternating ΔΒ Electrooptic Guided-Wave Directional Couplers",
abstract = "The optical matrix switch is one of the key devices for future photonic switching systems. Several kinds of discrete semiconductor optical switches have been studied. However, up to the present, only a few investigations have been made on the integrated semiconductor matrix switch. The authors have recently realized integrated 4×4 GaAs/AlGaAs optical matrix switches constructed from 12 electrooptic directional couplers. In order to achieve uniform device characteristics, molecular beam epitaxy (MBE) and reactive ion beam etching (RIBE) were chosen as crystal growth technique and waveguide fabrication technique, respectively, in addition to the simplified tree structure as a matrix switch architecture. As a result, matrix switches with quite uniform device characteristics, such as small switching voltage deviation of 9.0 ± 0.5 V for ⊗ state and 21.9 ± 1.5 V for ⊖ state and little path dependence in ±0.5-dB propagation loss, have been realized for the first time.",
author = "Keiro Komatsu and Kiichi Hamamoto and Mitsunori Sugimoto and Akira Ajisawa and Yuji Kohga and Akira Suzuki",
year = "1991",
month = "7",
doi = "10.1109/50.85788",
language = "English",
volume = "9",
pages = "871--878",
journal = "Journal of Lightwave Technology",
issn = "0733-8724",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - 4×4 GaAs /AlGaAs Optical Matrix Switches with Uniform Device Characteristics Using Alternating ΔΒ Electrooptic Guided-Wave Directional Couplers

AU - Komatsu, Keiro

AU - Hamamoto, Kiichi

AU - Sugimoto, Mitsunori

AU - Ajisawa, Akira

AU - Kohga, Yuji

AU - Suzuki, Akira

PY - 1991/7

Y1 - 1991/7

N2 - The optical matrix switch is one of the key devices for future photonic switching systems. Several kinds of discrete semiconductor optical switches have been studied. However, up to the present, only a few investigations have been made on the integrated semiconductor matrix switch. The authors have recently realized integrated 4×4 GaAs/AlGaAs optical matrix switches constructed from 12 electrooptic directional couplers. In order to achieve uniform device characteristics, molecular beam epitaxy (MBE) and reactive ion beam etching (RIBE) were chosen as crystal growth technique and waveguide fabrication technique, respectively, in addition to the simplified tree structure as a matrix switch architecture. As a result, matrix switches with quite uniform device characteristics, such as small switching voltage deviation of 9.0 ± 0.5 V for ⊗ state and 21.9 ± 1.5 V for ⊖ state and little path dependence in ±0.5-dB propagation loss, have been realized for the first time.

AB - The optical matrix switch is one of the key devices for future photonic switching systems. Several kinds of discrete semiconductor optical switches have been studied. However, up to the present, only a few investigations have been made on the integrated semiconductor matrix switch. The authors have recently realized integrated 4×4 GaAs/AlGaAs optical matrix switches constructed from 12 electrooptic directional couplers. In order to achieve uniform device characteristics, molecular beam epitaxy (MBE) and reactive ion beam etching (RIBE) were chosen as crystal growth technique and waveguide fabrication technique, respectively, in addition to the simplified tree structure as a matrix switch architecture. As a result, matrix switches with quite uniform device characteristics, such as small switching voltage deviation of 9.0 ± 0.5 V for ⊗ state and 21.9 ± 1.5 V for ⊖ state and little path dependence in ±0.5-dB propagation loss, have been realized for the first time.

UR - http://www.scopus.com/inward/record.url?scp=0026186318&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026186318&partnerID=8YFLogxK

U2 - 10.1109/50.85788

DO - 10.1109/50.85788

M3 - Article

AN - SCOPUS:0026186318

VL - 9

SP - 871

EP - 878

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

SN - 0733-8724

IS - 7

ER -