4×4 GaAs /AlGaAs Optical Matrix Switches with Uniform Device Characteristics Using Alternating ΔΒ Electrooptic Guided-Wave Directional Couplers

Keiro Komatsu, Kiichi Hamamoto, Mitsunori Sugimoto, Akira Ajisawa, Yuji Kohga, Akira Suzuki

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The optical matrix switch is one of the key devices for future photonic switching systems. Several kinds of discrete semiconductor optical switches have been studied. However, up to the present, only a few investigations have been made on the integrated semiconductor matrix switch. The authors have recently realized integrated 4×4 GaAs/AlGaAs optical matrix switches constructed from 12 electrooptic directional couplers. In order to achieve uniform device characteristics, molecular beam epitaxy (MBE) and reactive ion beam etching (RIBE) were chosen as crystal growth technique and waveguide fabrication technique, respectively, in addition to the simplified tree structure as a matrix switch architecture. As a result, matrix switches with quite uniform device characteristics, such as small switching voltage deviation of 9.0 ± 0.5 V for ⊗ state and 21.9 ± 1.5 V for ⊖ state and little path dependence in ±0.5-dB propagation loss, have been realized for the first time.

Original languageEnglish
Pages (from-to)871-878
Number of pages8
JournalJournal of Lightwave Technology
Volume9
Issue number7
DOIs
Publication statusPublished - Jul 1991
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of '4×4 GaAs /AlGaAs Optical Matrix Switches with Uniform Device Characteristics Using Alternating ΔΒ Electrooptic Guided-Wave Directional Couplers'. Together they form a unique fingerprint.

  • Cite this