Abstract
The optical matrix switch is one of the key devices for future photonic switching systems. Several kinds of discrete semiconductor optical switches have been studied. However, up to the present, only a few investigations have been made on the integrated semiconductor matrix switch. The authors have recently realized integrated 4×4 GaAs/AlGaAs optical matrix switches constructed from 12 electrooptic directional couplers. In order to achieve uniform device characteristics, molecular beam epitaxy (MBE) and reactive ion beam etching (RIBE) were chosen as crystal growth technique and waveguide fabrication technique, respectively, in addition to the simplified tree structure as a matrix switch architecture. As a result, matrix switches with quite uniform device characteristics, such as small switching voltage deviation of 9.0 ± 0.5 V for ⊗ state and 21.9 ± 1.5 V for ⊖ state and little path dependence in ±0.5-dB propagation loss, have been realized for the first time.
| Original language | English |
|---|---|
| Pages (from-to) | 871-878 |
| Number of pages | 8 |
| Journal | Journal of Lightwave Technology |
| Volume | 9 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 1991 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
Cite this
4×4 GaAs /AlGaAs Optical Matrix Switches with Uniform Device Characteristics Using Alternating ΔΒ Electrooptic Guided-Wave Directional Couplers. / Komatsu, Keiro; Hamamoto, Kiichi; Sugimoto, Mitsunori; Ajisawa, Akira; Kohga, Yuji; Suzuki, Akira.
In: Journal of Lightwave Technology, Vol. 9, No. 7, 07.1991, p. 871-878.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - 4×4 GaAs /AlGaAs Optical Matrix Switches with Uniform Device Characteristics Using Alternating ΔΒ Electrooptic Guided-Wave Directional Couplers
AU - Komatsu, Keiro
AU - Hamamoto, Kiichi
AU - Sugimoto, Mitsunori
AU - Ajisawa, Akira
AU - Kohga, Yuji
AU - Suzuki, Akira
PY - 1991/7
Y1 - 1991/7
N2 - The optical matrix switch is one of the key devices for future photonic switching systems. Several kinds of discrete semiconductor optical switches have been studied. However, up to the present, only a few investigations have been made on the integrated semiconductor matrix switch. The authors have recently realized integrated 4×4 GaAs/AlGaAs optical matrix switches constructed from 12 electrooptic directional couplers. In order to achieve uniform device characteristics, molecular beam epitaxy (MBE) and reactive ion beam etching (RIBE) were chosen as crystal growth technique and waveguide fabrication technique, respectively, in addition to the simplified tree structure as a matrix switch architecture. As a result, matrix switches with quite uniform device characteristics, such as small switching voltage deviation of 9.0 ± 0.5 V for ⊗ state and 21.9 ± 1.5 V for ⊖ state and little path dependence in ±0.5-dB propagation loss, have been realized for the first time.
AB - The optical matrix switch is one of the key devices for future photonic switching systems. Several kinds of discrete semiconductor optical switches have been studied. However, up to the present, only a few investigations have been made on the integrated semiconductor matrix switch. The authors have recently realized integrated 4×4 GaAs/AlGaAs optical matrix switches constructed from 12 electrooptic directional couplers. In order to achieve uniform device characteristics, molecular beam epitaxy (MBE) and reactive ion beam etching (RIBE) were chosen as crystal growth technique and waveguide fabrication technique, respectively, in addition to the simplified tree structure as a matrix switch architecture. As a result, matrix switches with quite uniform device characteristics, such as small switching voltage deviation of 9.0 ± 0.5 V for ⊗ state and 21.9 ± 1.5 V for ⊖ state and little path dependence in ±0.5-dB propagation loss, have been realized for the first time.
UR - http://www.scopus.com/inward/record.url?scp=0026186318&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026186318&partnerID=8YFLogxK
U2 - 10.1109/50.85788
DO - 10.1109/50.85788
M3 - Article
AN - SCOPUS:0026186318
VL - 9
SP - 871
EP - 878
JO - Journal of Lightwave Technology
JF - Journal of Lightwave Technology
SN - 0733-8724
IS - 7
ER -