Abstract
A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 310kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95% and 60%, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49% with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a high-frequency switching operation of 4 kHz has been successfully demonstrated.
| Original language | English |
|---|---|
| Title of host publication | 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012 |
| Pages | 1509-1514 |
| Number of pages | 6 |
| DOIs | |
| Publication status | Published - Dec 17 2012 |
| Externally published | Yes |
| Event | 4th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2012 - Raleigh, NC, United States Duration: Sep 15 2012 → Sep 20 2012 |
Publication series
| Name | 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012 |
|---|
Other
| Other | 4th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2012 |
|---|---|
| Country | United States |
| City | Raleigh, NC |
| Period | 9/15/12 → 9/20/12 |
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All Science Journal Classification (ASJC) codes
- Energy Engineering and Power Technology
- Fuel Technology
Cite this
4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters. / Takao, Kazuto; Wada, Keiji; Sung, Kyungmin; Mastuoka, Yuji; Tanaka, Yasunori; Nishizawa, Shinichi; Ota, Chiharu; Kanai, Takeo; Shinohe, Takashi; Ohashi, Hiromichi.
2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012. 2012. p. 1509-1514 6342635 (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - 4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters
AU - Takao, Kazuto
AU - Wada, Keiji
AU - Sung, Kyungmin
AU - Mastuoka, Yuji
AU - Tanaka, Yasunori
AU - Nishizawa, Shinichi
AU - Ota, Chiharu
AU - Kanai, Takeo
AU - Shinohe, Takashi
AU - Ohashi, Hiromichi
PY - 2012/12/17
Y1 - 2012/12/17
N2 - A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 310kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95% and 60%, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49% with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a high-frequency switching operation of 4 kHz has been successfully demonstrated.
AB - A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 310kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95% and 60%, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49% with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a high-frequency switching operation of 4 kHz has been successfully demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=84870939376&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84870939376&partnerID=8YFLogxK
U2 - 10.1109/ECCE.2012.6342635
DO - 10.1109/ECCE.2012.6342635
M3 - Conference contribution
AN - SCOPUS:84870939376
SN - 9781467308014
T3 - 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012
SP - 1509
EP - 1514
BT - 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012
ER -