4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

Kazuto Takao; Keiji Wada; Kyungmin Sung; Yuji Mastuoka; Yasunori Tanaka; Shinichi Nishizawa; Chiharu Ota; Takeo Kanai; Takashi Shinohe; Hiromichi Ohashi

doi:10.1109/ECCE.2012.6342635

4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

Kazuto Takao, Keiji Wada, Kyungmin Sung, Yuji Mastuoka, Yasunori Tanaka, Shinichi Nishizawa, Chiharu Ota, Takeo Kanai, Takashi Shinohe, Hiromichi Ohashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 310kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95% and 60%, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49% with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a high-frequency switching operation of 4 kHz has been successfully demonstrated.

Original language	English
Title of host publication	2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012
Pages	1509-1514
Number of pages	6
DOIs	https://doi.org/10.1109/ECCE.2012.6342635
Publication status	Published - Dec 17 2012
Externally published	Yes
Event	4th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2012 - Raleigh, NC, United States Duration: Sep 15 2012 → Sep 20 2012

Publication series

Name	2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012

Other

Other	4th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2012
Country	United States
City	Raleigh, NC
Period	9/15/12 → 9/20/12

All Science Journal Classification (ASJC) codes

Energy Engineering and Power Technology
Fuel Technology

Access to Document

10.1109/ECCE.2012.6342635

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Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T., & Ohashi, H. (2012). 4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters. In 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012 (pp. 1509-1514). [6342635] (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012). https://doi.org/10.1109/ECCE.2012.6342635

4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters. / Takao, Kazuto; Wada, Keiji; Sung, Kyungmin; Mastuoka, Yuji; Tanaka, Yasunori; Nishizawa, Shinichi; Ota, Chiharu; Kanai, Takeo; Shinohe, Takashi; Ohashi, Hiromichi.

2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012. 2012. p. 1509-1514 6342635 (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takao, K, Wada, K, Sung, K, Mastuoka, Y, Tanaka, Y, Nishizawa, S, Ota, C, Kanai, T, Shinohe, T & Ohashi, H 2012, 4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters. in 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012., 6342635, 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012, pp. 1509-1514, 4th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2012, Raleigh, NC, United States, 9/15/12. https://doi.org/10.1109/ECCE.2012.6342635

Takao K, Wada K, Sung K, Mastuoka Y, Tanaka Y, Nishizawa S et al. 4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters. In 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012. 2012. p. 1509-1514. 6342635. (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012). https://doi.org/10.1109/ECCE.2012.6342635

Takao, Kazuto ; Wada, Keiji ; Sung, Kyungmin ; Mastuoka, Yuji ; Tanaka, Yasunori ; Nishizawa, Shinichi ; Ota, Chiharu ; Kanai, Takeo ; Shinohe, Takashi ; Ohashi, Hiromichi. / 4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters. 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012. 2012. pp. 1509-1514 (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012).

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abstract = "A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 310kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95% and 60%, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49% with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a high-frequency switching operation of 4 kHz has been successfully demonstrated.",

author = "Kazuto Takao and Keiji Wada and Kyungmin Sung and Yuji Mastuoka and Yasunori Tanaka and Shinichi Nishizawa and Chiharu Ota and Takeo Kanai and Takashi Shinohe and Hiromichi Ohashi",

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AU - Sung, Kyungmin

AU - Mastuoka, Yuji

AU - Tanaka, Yasunori

AU - Nishizawa, Shinichi

AU - Ota, Chiharu

AU - Kanai, Takeo

AU - Shinohe, Takashi

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N2 - A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 310kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95% and 60%, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49% with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a high-frequency switching operation of 4 kHz has been successfully demonstrated.

AB - A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 310kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95% and 60%, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49% with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a high-frequency switching operation of 4 kHz has been successfully demonstrated.

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