4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

Kazuto Takao, Keiji Wada, Kyungmin Sung, Yuji Mastuoka, Yasunori Tanaka, Shinichi Nishizawa, Chiharu Ota, Takeo Kanai, Takashi Shinohe, Hiromichi Ohashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 310kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95% and 60%, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49% with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a high-frequency switching operation of 4 kHz has been successfully demonstrated.

Original languageEnglish
Title of host publication2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012
Pages1509-1514
Number of pages6
DOIs
Publication statusPublished - Dec 17 2012
Externally publishedYes
Event4th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2012 - Raleigh, NC, United States
Duration: Sep 15 2012Sep 20 2012

Publication series

Name2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012

Other

Other4th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2012
CountryUnited States
CityRaleigh, NC
Period9/15/129/20/12

Fingerprint

Power converters
Diodes
Electric potential
Switching frequency
Recovery
Resistors

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Fuel Technology

Cite this

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., ... Ohashi, H. (2012). 4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters. In 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012 (pp. 1509-1514). [6342635] (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012). https://doi.org/10.1109/ECCE.2012.6342635

4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters. / Takao, Kazuto; Wada, Keiji; Sung, Kyungmin; Mastuoka, Yuji; Tanaka, Yasunori; Nishizawa, Shinichi; Ota, Chiharu; Kanai, Takeo; Shinohe, Takashi; Ohashi, Hiromichi.

2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012. 2012. p. 1509-1514 6342635 (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takao, K, Wada, K, Sung, K, Mastuoka, Y, Tanaka, Y, Nishizawa, S, Ota, C, Kanai, T, Shinohe, T & Ohashi, H 2012, 4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters. in 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012., 6342635, 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012, pp. 1509-1514, 4th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2012, Raleigh, NC, United States, 9/15/12. https://doi.org/10.1109/ECCE.2012.6342635
Takao K, Wada K, Sung K, Mastuoka Y, Tanaka Y, Nishizawa S et al. 4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters. In 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012. 2012. p. 1509-1514. 6342635. (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012). https://doi.org/10.1109/ECCE.2012.6342635
Takao, Kazuto ; Wada, Keiji ; Sung, Kyungmin ; Mastuoka, Yuji ; Tanaka, Yasunori ; Nishizawa, Shinichi ; Ota, Chiharu ; Kanai, Takeo ; Shinohe, Takashi ; Ohashi, Hiromichi. / 4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters. 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012. 2012. pp. 1509-1514 (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012).
@inproceedings{14c5a6f809b844c7a7d8ea05fe722891,
title = "4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters",
abstract = "A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 310kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95{\%} and 60{\%}, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49{\%} with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a high-frequency switching operation of 4 kHz has been successfully demonstrated.",
author = "Kazuto Takao and Keiji Wada and Kyungmin Sung and Yuji Mastuoka and Yasunori Tanaka and Shinichi Nishizawa and Chiharu Ota and Takeo Kanai and Takashi Shinohe and Hiromichi Ohashi",
year = "2012",
month = "12",
day = "17",
doi = "10.1109/ECCE.2012.6342635",
language = "English",
isbn = "9781467308014",
series = "2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012",
pages = "1509--1514",
booktitle = "2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012",

}

TY - GEN

T1 - 4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

AU - Takao, Kazuto

AU - Wada, Keiji

AU - Sung, Kyungmin

AU - Mastuoka, Yuji

AU - Tanaka, Yasunori

AU - Nishizawa, Shinichi

AU - Ota, Chiharu

AU - Kanai, Takeo

AU - Shinohe, Takashi

AU - Ohashi, Hiromichi

PY - 2012/12/17

Y1 - 2012/12/17

N2 - A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 310kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95% and 60%, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49% with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a high-frequency switching operation of 4 kHz has been successfully demonstrated.

AB - A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 310kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95% and 60%, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49% with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a high-frequency switching operation of 4 kHz has been successfully demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=84870939376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870939376&partnerID=8YFLogxK

U2 - 10.1109/ECCE.2012.6342635

DO - 10.1109/ECCE.2012.6342635

M3 - Conference contribution

AN - SCOPUS:84870939376

SN - 9781467308014

T3 - 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012

SP - 1509

EP - 1514

BT - 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012

ER -