TY - GEN
T1 - 4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters
AU - Takao, Kazuto
AU - Wada, Keiji
AU - Sung, Kyungmin
AU - Mastuoka, Yuji
AU - Tanaka, Yasunori
AU - Nishizawa, Shinichi
AU - Ota, Chiharu
AU - Kanai, Takeo
AU - Shinohe, Takashi
AU - Ohashi, Hiromichi
PY - 2012/12/17
Y1 - 2012/12/17
N2 - A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 310kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95% and 60%, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49% with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a high-frequency switching operation of 4 kHz has been successfully demonstrated.
AB - A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 310kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95% and 60%, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49% with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a high-frequency switching operation of 4 kHz has been successfully demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=84870939376&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84870939376&partnerID=8YFLogxK
U2 - 10.1109/ECCE.2012.6342635
DO - 10.1109/ECCE.2012.6342635
M3 - Conference contribution
AN - SCOPUS:84870939376
SN - 9781467308014
T3 - 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012
SP - 1509
EP - 1514
BT - 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012
T2 - 4th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2012
Y2 - 14 September 2012 through 19 September 2012
ER -