50 cm size seed cast Si ingot growth and its characterization

Takashi Sekiguchi, Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Satoshi Nakano, Bing Gao, Koichi Kakimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have proposed single seed cast Si growth and developed a furnace for 50 cm squareingots. By optimizing growth parameters, improving gas condition, coating, the quality of mono Siingot has improved. Namely, dislocation density, the concentrations of substitutional carbon andinterstitial oxygen have been significantly reduced. The conversion efficiency of cast Si solar cells hasbecome comparable with those of CZ Si wafers.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XVI
EditorsPeter Pichler, Peter Pichler
PublisherTrans Tech Publications Ltd
Pages30-34
Number of pages5
ISBN (Print)9783038356080
DOIs
Publication statusPublished - Jan 1 2016
Event16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 - Bad Staffelstein, Germany
Duration: Sep 20 2015Sep 25 2015

Publication series

NameSolid State Phenomena
Volume242
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Other

Other16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015
CountryGermany
CityBad Staffelstein
Period9/20/159/25/15

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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  • Cite this

    Sekiguchi, T., Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., Nakano, S., Gao, B., & Kakimoto, K. (2016). 50 cm size seed cast Si ingot growth and its characterization. In P. Pichler, & P. Pichler (Eds.), Gettering and Defect Engineering in Semiconductor Technology XVI (pp. 30-34). (Solid State Phenomena; Vol. 242). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.242.30