50 cm size seed cast Si ingot growth and its characterization

Takashi Sekiguchi, Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Satoshi Nakano, Bing Gao, Koichi Kakimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have proposed single seed cast Si growth and developed a furnace for 50 cm squareingots. By optimizing growth parameters, improving gas condition, coating, the quality of mono Siingot has improved. Namely, dislocation density, the concentrations of substitutional carbon andinterstitial oxygen have been significantly reduced. The conversion efficiency of cast Si solar cells hasbecome comparable with those of CZ Si wafers.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XVI
EditorsPeter Pichler, Peter Pichler
PublisherTrans Tech Publications Ltd
Pages30-34
Number of pages5
ISBN (Print)9783038356080
DOIs
Publication statusPublished - Jan 1 2016
Event16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 - Bad Staffelstein, Germany
Duration: Sep 20 2015Sep 25 2015

Publication series

NameSolid State Phenomena
Volume242
ISSN (Electronic)1662-9779

Other

Other16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015
CountryGermany
CityBad Staffelstein
Period9/20/159/25/15

Fingerprint

ingots
Ingots
Seed
casts
seeds
Conversion efficiency
furnaces
Solar cells
Furnaces
Carbon
solar cells
Gases
wafers
Oxygen
coatings
Coatings
carbon
oxygen
gases

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Sekiguchi, T., Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., ... Kakimoto, K. (2016). 50 cm size seed cast Si ingot growth and its characterization. In P. Pichler, & P. Pichler (Eds.), Gettering and Defect Engineering in Semiconductor Technology XVI (pp. 30-34). (Solid State Phenomena; Vol. 242). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.242.30

50 cm size seed cast Si ingot growth and its characterization. / Sekiguchi, Takashi; Miyamura, Yoshiji; Harada, Hirofumi; Jiptner, Karolin; Chen, Jun; Prakash, Ronit R.; Nakano, Satoshi; Gao, Bing; Kakimoto, Koichi.

Gettering and Defect Engineering in Semiconductor Technology XVI. ed. / Peter Pichler; Peter Pichler. Trans Tech Publications Ltd, 2016. p. 30-34 (Solid State Phenomena; Vol. 242).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sekiguchi, T, Miyamura, Y, Harada, H, Jiptner, K, Chen, J, Prakash, RR, Nakano, S, Gao, B & Kakimoto, K 2016, 50 cm size seed cast Si ingot growth and its characterization. in P Pichler & P Pichler (eds), Gettering and Defect Engineering in Semiconductor Technology XVI. Solid State Phenomena, vol. 242, Trans Tech Publications Ltd, pp. 30-34, 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015, Bad Staffelstein, Germany, 9/20/15. https://doi.org/10.4028/www.scientific.net/SSP.242.30
Sekiguchi T, Miyamura Y, Harada H, Jiptner K, Chen J, Prakash RR et al. 50 cm size seed cast Si ingot growth and its characterization. In Pichler P, Pichler P, editors, Gettering and Defect Engineering in Semiconductor Technology XVI. Trans Tech Publications Ltd. 2016. p. 30-34. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.242.30
Sekiguchi, Takashi ; Miyamura, Yoshiji ; Harada, Hirofumi ; Jiptner, Karolin ; Chen, Jun ; Prakash, Ronit R. ; Nakano, Satoshi ; Gao, Bing ; Kakimoto, Koichi. / 50 cm size seed cast Si ingot growth and its characterization. Gettering and Defect Engineering in Semiconductor Technology XVI. editor / Peter Pichler ; Peter Pichler. Trans Tech Publications Ltd, 2016. pp. 30-34 (Solid State Phenomena).
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