TY - GEN
T1 - 50 cm size seed cast Si ingot growth and its characterization
AU - Sekiguchi, Takashi
AU - Miyamura, Yoshiji
AU - Harada, Hirofumi
AU - Jiptner, Karolin
AU - Chen, Jun
AU - Prakash, Ronit R.
AU - Nakano, Satoshi
AU - Gao, Bing
AU - Kakimoto, Koichi
N1 - Publisher Copyright:
© (2016) Trans Tech Publications, Switzerland.
PY - 2016
Y1 - 2016
N2 - We have proposed single seed cast Si growth and developed a furnace for 50 cm squareingots. By optimizing growth parameters, improving gas condition, coating, the quality of mono Siingot has improved. Namely, dislocation density, the concentrations of substitutional carbon andinterstitial oxygen have been significantly reduced. The conversion efficiency of cast Si solar cells hasbecome comparable with those of CZ Si wafers.
AB - We have proposed single seed cast Si growth and developed a furnace for 50 cm squareingots. By optimizing growth parameters, improving gas condition, coating, the quality of mono Siingot has improved. Namely, dislocation density, the concentrations of substitutional carbon andinterstitial oxygen have been significantly reduced. The conversion efficiency of cast Si solar cells hasbecome comparable with those of CZ Si wafers.
UR - http://www.scopus.com/inward/record.url?scp=84953863669&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84953863669&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.242.30
DO - 10.4028/www.scientific.net/SSP.242.30
M3 - Conference contribution
AN - SCOPUS:84953863669
SN - 9783038356080
T3 - Solid State Phenomena
SP - 30
EP - 34
BT - Gettering and Defect Engineering in Semiconductor Technology XVI
A2 - Pichler, Peter
A2 - Pichler, Peter
PB - Trans Tech Publications Ltd
T2 - 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015
Y2 - 20 September 2015 through 25 September 2015
ER -