500°C formation of poly-Si1-xGex (x ≥ 0.5) on SiO2 by ion-beam stimulated solid phase crystallization

Isao Tsunoda, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalConference article

Abstract

Ion beam stimulated solid phase crystallization of a-Si1-xGex (0 ≤ x ≤ 1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150°C for a-Si1-xGex with all Ge fractions (0 - 100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼ 500°C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.

Original languageEnglish
Pages (from-to)501-505
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume744
Publication statusPublished - Dec 1 2002
EventQuantum Confined Semiconductor Nanostructures - Boston MA, United States
Duration: Dec 2 2002Dec 5 2002

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Crystallization
stimulation
Ion beams
solid phases
ion beams
Ions
crystallization
Glass
glass
Substrates
Crystal growth
softening
crystal growth
critical temperature
ions
Nucleation
Doping (additives)
nucleation
Temperature
Crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

500°C formation of poly-Si1-xGex (x ≥ 0.5) on SiO2 by ion-beam stimulated solid phase crystallization. / Tsunoda, Isao; Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

In: Materials Research Society Symposium - Proceedings, Vol. 744, 01.12.2002, p. 501-505.

Research output: Contribution to journalConference article

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AU - Tsunoda, Isao

AU - Kanno, Hiroshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

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N2 - Ion beam stimulated solid phase crystallization of a-Si1-xGex (0 ≤ x ≤ 1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150°C for a-Si1-xGex with all Ge fractions (0 - 100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼ 500°C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.

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