500°C formation of poly-Si1-xGex (x ≥ 0.5) on SiO2 by ion-beam stimulated solid phase crystallization

Isao Tsunoda, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalConference articlepeer-review


Ion beam stimulated solid phase crystallization of a-Si1-xGex (0 ≤ x ≤ 1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150°C for a-Si1-xGex with all Ge fractions (0 - 100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼ 500°C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.

Original languageEnglish
Pages (from-to)501-505
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2002
EventQuantum Confined Semiconductor Nanostructures - Boston MA, United States
Duration: Dec 2 2002Dec 5 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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