500°C formation of poly-Si1-xGex (x ≥ 0.5) on SiO2 by ion-beam stimulated solid phase crystallization

Isao Tsunoda, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalConference article

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Engineering & Materials Science

Chemical Compounds

Physics & Astronomy