5GHz-band CMOS class-E power amplifier module considering wire bonding

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents a high-efficient 0.18μm CMOS class-E power amplifier (PA) for 5GHz wireless transmitter applications using constant envelope modulation scheme. The proposed class-E PA employs injection-locking technique to reduce required input power. This PA was placed on the lead frame and molded in the packaging for transmitter application. In our design, bonding wires are optimized by using EM simulation. And the coplanar waveguide structure in the RF port was composed of bonding wires. Our PA module is composed of PA in package, PCB, DC cable and SMA connectors. This PA module has a measured PAE = 41.0 %.

Original languageEnglish
Title of host publication2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages157-159
Number of pages3
ISBN (Electronic)9781467377942
DOIs
Publication statusPublished - Jan 8 2016
EventIEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Sendai, Japan
Duration: Aug 26 2015Aug 28 2015

Publication series

Name2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings

Other

OtherIEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015
CountryJapan
CitySendai
Period8/26/158/28/15

Fingerprint

Power amplifiers
Wire
Transmitters
Coplanar waveguides
Polychlorinated biphenyls
Packaging
Cables
Lead
Modulation

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Kanaya, H. (2016). 5GHz-band CMOS class-E power amplifier module considering wire bonding. In 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings (pp. 157-159). [7377919] (2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2015.7377919

5GHz-band CMOS class-E power amplifier module considering wire bonding. / Kanaya, Haruichi.

2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. p. 157-159 7377919 (2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kanaya, H 2016, 5GHz-band CMOS class-E power amplifier module considering wire bonding. in 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings., 7377919, 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 157-159, IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015, Sendai, Japan, 8/26/15. https://doi.org/10.1109/RFIT.2015.7377919
Kanaya H. 5GHz-band CMOS class-E power amplifier module considering wire bonding. In 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2016. p. 157-159. 7377919. (2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings). https://doi.org/10.1109/RFIT.2015.7377919
Kanaya, Haruichi. / 5GHz-band CMOS class-E power amplifier module considering wire bonding. 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 157-159 (2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings).
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