600 V semi-super junction MOSFET

Wataru Saito; Ichiro Omura; Satoshi Aida; Shigeo Koduki; Masaru Izumisawa; Tsuneo Ogura

600 V semi-super junction MOSFET

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Tsuneo Ogura

Research output: Contribution to conference › Paper › peer-review

Abstract

New superjunction (SJ) structure is proposed and demonstrated for the power-switching device with remarkable advantage over conventional SJ structure. An n-doped layer is connected to the bottom of the SJ structure for the proposed structure. It is found with experiment and simulation that the proposed structure shows both the lower on-resistance and the softer recovery of body diode than conventional SJ MOSFET. The fabricated Semi-SJ MOSFETs realize Ron as low as 54mΩcm² (48 mΩcm² in calculation) at 690 V breakdown voltage with only half depth of the p-column than the conventional SJ MOSFET. The softness factor of body diode is also improved in the factor of 4.5. The proposed MOSFET is very attractive for H-bridge topology applications such as UPSs and small inverter systems thanks to the low on-resistance and the soft recovery body diode.

Original language	English
Pages	45-48
Number of pages	4
Publication status	Published - Sep 1 2003
Externally published	Yes
Event	2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings - Cambridge, United Kingdom Duration: Jul 14 2003 → Jul 17 2003

Conference

Conference	2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings
Country/Territory	United Kingdom
City	Cambridge
Period	7/14/03 → 7/17/03

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

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title = "600 V semi-super junction MOSFET",

abstract = "New superjunction (SJ) structure is proposed and demonstrated for the power-switching device with remarkable advantage over conventional SJ structure. An n-doped layer is connected to the bottom of the SJ structure for the proposed structure. It is found with experiment and simulation that the proposed structure shows both the lower on-resistance and the softer recovery of body diode than conventional SJ MOSFET. The fabricated Semi-SJ MOSFETs realize Ron as low as 54mΩcm2 (48 mΩcm2 in calculation) at 690 V breakdown voltage with only half depth of the p-column than the conventional SJ MOSFET. The softness factor of body diode is also improved in the factor of 4.5. The proposed MOSFET is very attractive for H-bridge topology applications such as UPSs and small inverter systems thanks to the low on-resistance and the soft recovery body diode.",

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T1 - 600 V semi-super junction MOSFET

AU - Saito, Wataru

AU - Omura, Ichiro

AU - Aida, Satoshi

AU - Koduki, Shigeo

AU - Izumisawa, Masaru

AU - Ogura, Tsuneo

PY - 2003/9/1

Y1 - 2003/9/1

N2 - New superjunction (SJ) structure is proposed and demonstrated for the power-switching device with remarkable advantage over conventional SJ structure. An n-doped layer is connected to the bottom of the SJ structure for the proposed structure. It is found with experiment and simulation that the proposed structure shows both the lower on-resistance and the softer recovery of body diode than conventional SJ MOSFET. The fabricated Semi-SJ MOSFETs realize Ron as low as 54mΩcm2 (48 mΩcm2 in calculation) at 690 V breakdown voltage with only half depth of the p-column than the conventional SJ MOSFET. The softness factor of body diode is also improved in the factor of 4.5. The proposed MOSFET is very attractive for H-bridge topology applications such as UPSs and small inverter systems thanks to the low on-resistance and the soft recovery body diode.

AB - New superjunction (SJ) structure is proposed and demonstrated for the power-switching device with remarkable advantage over conventional SJ structure. An n-doped layer is connected to the bottom of the SJ structure for the proposed structure. It is found with experiment and simulation that the proposed structure shows both the lower on-resistance and the softer recovery of body diode than conventional SJ MOSFET. The fabricated Semi-SJ MOSFETs realize Ron as low as 54mΩcm2 (48 mΩcm2 in calculation) at 690 V breakdown voltage with only half depth of the p-column than the conventional SJ MOSFET. The softness factor of body diode is also improved in the factor of 4.5. The proposed MOSFET is very attractive for H-bridge topology applications such as UPSs and small inverter systems thanks to the low on-resistance and the soft recovery body diode.

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T2 - 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings

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ER -

600 V semi-super junction MOSFET

Abstract

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All Science Journal Classification (ASJC) codes

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