600V AlGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter

Wataru Saito; Yoshiharu Takada; Masahiko Kuraguchi; Kunio Tsuda; Ichiro Omura; Tsuneo Ogura

600V AlGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura

Research output: Contribution to journal › Conference article › peer-review

Abstract

600 V class AlGaN/GaN power HEMT was designed for high voltage power electronics application such as power supplies and motor drives. The fabricated device was demonstrated in a DC-DC down converter circuit, showing the future possibility of high efficiency and high frequency operations of AlGaN/GaN power HEMTs.

Original language	English
Pages (from-to)	587-590
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - Dec 1 2003
Externally published	Yes
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: Dec 8 2003 → Dec 10 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "600V AlGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter",

abstract = "600 V class AlGaN/GaN power HEMT was designed for high voltage power electronics application such as power supplies and motor drives. The fabricated device was demonstrated in a DC-DC down converter circuit, showing the future possibility of high efficiency and high frequency operations of AlGaN/GaN power HEMTs.",

author = "Wataru Saito and Yoshiharu Takada and Masahiko Kuraguchi and Kunio Tsuda and Ichiro Omura and Tsuneo Ogura",

year = "2003",

month = dec,

day = "1",

language = "English",

pages = "587--590",

journal = "Technical Digest - International Electron Devices Meeting",

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note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

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TY - JOUR

T1 - 600V AlGaN/GaN Power-HEMT

T2 - IEEE International Electron Devices Meeting

AU - Saito, Wataru

AU - Takada, Yoshiharu

AU - Kuraguchi, Masahiko

AU - Tsuda, Kunio

AU - Omura, Ichiro

AU - Ogura, Tsuneo

PY - 2003/12/1

Y1 - 2003/12/1

N2 - 600 V class AlGaN/GaN power HEMT was designed for high voltage power electronics application such as power supplies and motor drives. The fabricated device was demonstrated in a DC-DC down converter circuit, showing the future possibility of high efficiency and high frequency operations of AlGaN/GaN power HEMTs.

AB - 600 V class AlGaN/GaN power HEMT was designed for high voltage power electronics application such as power supplies and motor drives. The fabricated device was demonstrated in a DC-DC down converter circuit, showing the future possibility of high efficiency and high frequency operations of AlGaN/GaN power HEMTs.

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M3 - Conference article

AN - SCOPUS:0842309763

SN - 0163-1918

SP - 587

EP - 590

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

600V AlGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter

Abstract

All Science Journal Classification (ASJC) codes

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