600V AlGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura

Research output: Contribution to journalConference article

Abstract

600 V class AlGaN/GaN power HEMT was designed for high voltage power electronics application such as power supplies and motor drives. The fabricated device was demonstrated in a DC-DC down converter circuit, showing the future possibility of high efficiency and high frequency operations of AlGaN/GaN power HEMTs.

Original languageEnglish
Pages (from-to)587-590
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - Dec 1 2003
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: Dec 8 2003Dec 10 2003

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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