TY - GEN
T1 - 60GHz-band on-chip Marchand Balun designed on flat and patterned ground shields for milimeter-wave 0.18μm CMOS technology
AU - Mat, Dayang A.A.
AU - Pokharel, Ramesh K.
AU - Sapawi, R.
AU - Kanaya, Haruichi
AU - Yoshida, Keiji
PY - 2011/12/1
Y1 - 2011/12/1
N2 - Milimeter-wave Marchand Balun designed on flat ground and patterned ground shields are presented in this paper. Each of the baluns is designed on top metal (M6) in 0.18μm CMOS technology. In order to achieve sufficient coupling, the balun is stacked on the second highest metal (M5) connected using inter-metal vias. These balun have three port, differential ended port (on top metal) and single ended port (on second highest metal). Patterned ground shield is designed on the ground metal to reduce dielectric substrate loss with strips shield length (SL)=strips shield space(SS)=5μm. The sizes of both designs are 235μm 340μm including pads. It shows that Balun-1 (with flat ground) gave S 11 better than 15dB at 58.02GHz, with ΙS 21Ι and ΙS 31Ι at differential ports, 4.722dB and 5.671dB respectively, while Balun-2 (with pattern ground shields) resulted ΙS 11Ι better than -20dB, with ΙS 21Ι, and ΙS 31Ι of 2.969dB and 4.144dB significantly.
AB - Milimeter-wave Marchand Balun designed on flat ground and patterned ground shields are presented in this paper. Each of the baluns is designed on top metal (M6) in 0.18μm CMOS technology. In order to achieve sufficient coupling, the balun is stacked on the second highest metal (M5) connected using inter-metal vias. These balun have three port, differential ended port (on top metal) and single ended port (on second highest metal). Patterned ground shield is designed on the ground metal to reduce dielectric substrate loss with strips shield length (SL)=strips shield space(SS)=5μm. The sizes of both designs are 235μm 340μm including pads. It shows that Balun-1 (with flat ground) gave S 11 better than 15dB at 58.02GHz, with ΙS 21Ι and ΙS 31Ι at differential ports, 4.722dB and 5.671dB respectively, while Balun-2 (with pattern ground shields) resulted ΙS 11Ι better than -20dB, with ΙS 21Ι, and ΙS 31Ι of 2.969dB and 4.144dB significantly.
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M3 - Conference contribution
AN - SCOPUS:84860540814
SN - 9780858259744
T3 - Asia-Pacific Microwave Conference Proceedings, APMC
SP - 884
EP - 887
BT - Asia-Pacific Microwave Conference Proceedings, APMC 2011
T2 - Asia-Pacific Microwave Conference, APMC 2011
Y2 - 5 December 2011 through 8 December 2011
ER -