TY - GEN
T1 - 70% Improvement in Q-factor of spiral inductor and its application in switched K-band VCO using 0.18 um CMOS technology
AU - Mansour, Islam
AU - Mansour, Marwa
AU - Aboualalaa, Mohamed
AU - Allam, Ahmed
AU - Abdel-Rahman, Adel B.
AU - Abo-Zahhad, Mohammed
AU - Pokharel, Ramesh K.
N1 - Publisher Copyright:
© 2018 IEICE
PY - 2019/1/16
Y1 - 2019/1/16
N2 - A novel technique for increasing the quality factor of the on-chip inductor is proposed in this paper. A high-quality factor shunt inductor is designed using the lower layers 5 and 3 in 0.18 um CMOS technology so the top layer is valid for other circuit components. The quality factor is improved by 70 % in the Ku, K and Ka-band compared to the single layer inductor. Furthermore, the proposed inductor has a compact area of about 0.0089 mm 2 . This shunt inductor is used with a switched MOS varactor capacitors to construct a switched notch filter which has a sharp skirt characteristic and can be used in the VCO circuits. Using this switched shunt inductor resonator, the phase noise of the VCO is enhanced by 8 dB compared to single layer inductor resonator, moreover, the frequency tuning range is doubled. The VCO achieves a wide tuning range of 2.5 GHz, the first band from 18.8 to 19.97 GHz while the second band from 19.96 to 21.3 GHz. The phase noise at 1MHz is -112.4 and -112.5 dBc/Hz at the low and high band and this results FoM of-192.2 and -192.5 at 19.9 GHz and 21.3 GHz, respectively. The figure of merit considering the frequency tuning range (FoM T ) is -194.4 dBc/Hz and the active VCO core area is 0.039 mm 2
AB - A novel technique for increasing the quality factor of the on-chip inductor is proposed in this paper. A high-quality factor shunt inductor is designed using the lower layers 5 and 3 in 0.18 um CMOS technology so the top layer is valid for other circuit components. The quality factor is improved by 70 % in the Ku, K and Ka-band compared to the single layer inductor. Furthermore, the proposed inductor has a compact area of about 0.0089 mm 2 . This shunt inductor is used with a switched MOS varactor capacitors to construct a switched notch filter which has a sharp skirt characteristic and can be used in the VCO circuits. Using this switched shunt inductor resonator, the phase noise of the VCO is enhanced by 8 dB compared to single layer inductor resonator, moreover, the frequency tuning range is doubled. The VCO achieves a wide tuning range of 2.5 GHz, the first band from 18.8 to 19.97 GHz while the second band from 19.96 to 21.3 GHz. The phase noise at 1MHz is -112.4 and -112.5 dBc/Hz at the low and high band and this results FoM of-192.2 and -192.5 at 19.9 GHz and 21.3 GHz, respectively. The figure of merit considering the frequency tuning range (FoM T ) is -194.4 dBc/Hz and the active VCO core area is 0.039 mm 2
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U2 - 10.23919/APMC.2018.8617138
DO - 10.23919/APMC.2018.8617138
M3 - Conference contribution
AN - SCOPUS:85061833124
T3 - Asia-Pacific Microwave Conference Proceedings, APMC
SP - 1133
EP - 1135
BT - 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 30th Asia-Pacific Microwave Conference, APMC 2018
Y2 - 6 November 2018 through 9 November 2018
ER -