8“ uniform electron cyclotron resonance plasma source using a circular TE01 mode microwave

Ryota Hidaka; Toru Yamaguchi; Nobuyoshi Hirotsu; Takaharu Ohshima; Ryuji Koga; Masayoshi Tanaka; Yoshinobu Kawai

doi:10.1143/JJAP.32.174

8“ uniform electron cyclotron resonance plasma source using a circular TE₀₁ mode microwave

Ryota Hidaka, Toru Yamaguchi, Nobuyoshi Hirotsu, Takaharu Ohshima, Ryuji Koga, Masayoshi Tanaka, Yoshinobu Kawai

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

A new type of electron cyclotron resonance (ECR) plasma source has been developed using a circular TE₀₁ mode microwave converted from the principal TE₁₀ rectangular mode. The ion saturation current density of 36 mA/cm₂ is achieved for the input microwave power of 3 kW at the nitrogen gas pressure of 5 x 10^-4 Torr. The uniformity of the ion saturation current density is within ±3% over 8 inches in diameter, which is better than that produced by a conventional TE₁₁ mode microwave. The mean ion energy at the substrate position in this ECR plasma source is in the range of 20-30 eV, depending on the shape of magnetic fields. The direction of ion motion is confirmed by etching test to be almost perpendicular to the wafer and to be useful for fabricating ULSI circuits on wafers larger than 6 inches in diameter.

Original language	English
Pages (from-to)	174-178
Number of pages	5
Journal	Japanese journal of applied physics
Volume	32
Issue number	1 R
DOIs	https://doi.org/10.1143/JJAP.32.174
Publication status	Published - Jan 1993
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.32.174

Cite this

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abstract = "A new type of electron cyclotron resonance (ECR) plasma source has been developed using a circular TE01 mode microwave converted from the principal TE10 rectangular mode. The ion saturation current density of 36 mA/cm2 is achieved for the input microwave power of 3 kW at the nitrogen gas pressure of 5 x 10-4 Torr. The uniformity of the ion saturation current density is within ±3% over 8 inches in diameter, which is better than that produced by a conventional TE11 mode microwave. The mean ion energy at the substrate position in this ECR plasma source is in the range of 20-30 eV, depending on the shape of magnetic fields. The direction of ion motion is confirmed by etching test to be almost perpendicular to the wafer and to be useful for fabricating ULSI circuits on wafers larger than 6 inches in diameter.",

author = "Ryota Hidaka and Toru Yamaguchi and Nobuyoshi Hirotsu and Takaharu Ohshima and Ryuji Koga and Masayoshi Tanaka and Yoshinobu Kawai",

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T1 - 8“ uniform electron cyclotron resonance plasma source using a circular TE01 mode microwave

AU - Hidaka, Ryota

AU - Yamaguchi, Toru

AU - Hirotsu, Nobuyoshi

AU - Ohshima, Takaharu

AU - Koga, Ryuji

AU - Tanaka, Masayoshi

AU - Kawai, Yoshinobu

PY - 1993/1

Y1 - 1993/1

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8“ uniform electron cyclotron resonance plasma source using a circular TE₀₁ mode microwave

Abstract

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