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2012
11 Citations (Scopus)

Anisotropic thermal stress simulation with complex crystal-melt interface evolution for seeded growth of monocrystalline silicon

Gao, B., Nakano, S., Harada, H., Miyamura, Y., Sekiguchi, T. & Kakimoto, K., Nov 7 2012, In : Crystal Growth and Design. 12, 11, p. 5708-5714 7 p.

Research output: Contribution to journalArticle

Monocrystalline silicon
thermal stresses
Thermal stress
Crystals
silicon
2013
13 Citations (Scopus)

Evaluation of residual strain in directional solidified mono-Si ingots

Jiptner, K., Fukuzawa, M., Miyamura, Y., Harada, H., Kakimoto, K. & Sekiguchi, T., Jan 1 2013, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 1, p. 141-145 5 p.

Research output: Contribution to journalArticle

ingots
evaluation
strain distribution
casts
solar cells
2012

Analysis of growth velocity of SiC growth by the physical vapor transport method

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S. & Nishizawa, S., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 25-28 4 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Argon
Vapors
vapors
Gases
Crystallization
2014
5 Citations (Scopus)

Characterization of residual strain in Si ingots grown by the seed-cast method

Jiptner, K., Fukuzawa, M., Miyamura, Y., Harada, H., Kakimoto, K. & Sekiguchi, T., Jan 1 2014, Gettering and Defect Engineering in Semiconductor Technology XV. Trans Tech Publications Ltd, p. 94-99 6 p. (Solid State Phenomena; vol. 205-206).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

ingots
Ingots
Seed
casts
seeds
17 Citations (Scopus)

Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization

Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., Nakano, S., Gao, B., Kakimoto, K. & Sekiguchi, T., Sep 1 2014, In : Journal of Crystal Growth. 401, p. 133-136 4 p.

Research output: Contribution to journalArticle

ingots
Silicon
Ingots
Crystallization
Crystal growth
2015
2 Citations (Scopus)

Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals

Gao, B. & Kakimoto, K., Jan 21 2015, In : Journal of Applied Physics. 117, 3, 035701.

Research output: Contribution to journalArticle

multiplication
slip
single crystals
plastic deformation
crystal growth
2011
1 Citation (Scopus)

Numerical analysis of light elements transport in a unidirectional solidification furnace

Kakimoto, K., Gao, B. & Nakano, S., Mar 1 2011, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 8, 3, p. 659-661 3 p.

Research output: Contribution to journalArticle

light elements
solidification
numerical analysis
furnaces
carbon
2014
2 Citations (Scopus)

10 cm diameter mono cast Si growth and its characterization

Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., Li, J. Y., Sekiguchi, T., Kojima, T., Ohshita, Y., Ogura, A., Fukuzawa, M., Nakano, S., Gao, B. & Kakimoto, K., Jan 1 2014, Gettering and Defect Engineering in Semiconductor Technology XV. Trans Tech Publications Ltd, p. 89-93 5 p. (Solid State Phenomena; vol. 205-206).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

ingots
Ingots
furnaces
casts
Furnaces
2012
8 Citations (Scopus)

Impact of light-element impurities on crystalline defect generation in silicon wafer

Tachibana, T., Sameshima, T., Kojima, T., Arafune, K., Kakimoto, K., Miyamura, Y., Harada, H., Sekiguchi, T., Ohshita, Y. & Ogura, A., Feb 1 2012, In : Japanese journal of applied physics. 51, 2 PART 2, 02BP08.

Research output: Contribution to journalArticle

light elements
Silicon wafers
wafers
Impurities
Crystalline materials
2016
7 Citations (Scopus)

Growth of semiconductor silicon crystals

Kakimoto, K., Gao, B., Liu, X. & Nakano, S., Jun 1 2016, In : Progress in Crystal Growth and Characterization of Materials. 62, 2, p. 273-285 13 p.

Research output: Contribution to journalReview article

Silicon
Semiconductor materials
Crystals
Crystal growth from melt
silicon
2015
8 Citations (Scopus)

Advantage in solar cell efficiency of high-quality seed cast mono Si ingot

Miyamura, Y., Harada, H., Jiptner, K., Nakano, S., Gao, B., Kakimoto, K., Nakamura, K., Ohshita, Y., Ogura, A., Sugawara, S. & Sekiguchi, T., Jun 1 2015, In : Applied Physics Express. 8, 6, 062301.

Research output: Contribution to journalArticle

Monocrystalline silicon
ingots
Ingots
Seed
casts
2011

Computer modeling of crystal growth of silicon for solar cells

Liu, L., Liu, X., Li, Z. & Kakimoto, K., Sep 1 2011, In : Frontiers of Energy and Power Engineering in China. 5, 3, p. 305-312 8 p.

Research output: Contribution to journalArticle

Crystal growth
Solar cells
Silicon
Simulators
Heat transfer
2013

Electrical properties of Cu2ZnSnS4 single crystal

Nagaoka, A., Yoshino, K., Miyake, H., Taniyama, T. & Kakimoto, K., Jan 1 2013, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., p. 2621-2624 4 p. 6745011. (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystal growth from solution
Electric properties
Single crystals
Defects
Growth temperature
2014
6 Citations (Scopus)
Dislocations (crystals)
Power control
Single crystals
optimization
single crystals
2011
24 Citations (Scopus)
Graphite
Crucibles
Silicon
crucibles
Silicon Dioxide
2017

Chairpersons’ preface

Kakimoto, K. & Arakawa, Y., Jun 15 2017, In : Journal of Crystal Growth. 468, p. 1-3 3 p.

Research output: Contribution to journalEditorial

2018

Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?

Miyamura, Y., Harada, H., Nakano, S., Nishizawa, S. & Kakimoto, K., May 1 2018, In : Journal of Crystal Growth. 489, p. 1-4 4 p.

Research output: Contribution to journalArticle

Silicon
life (durability)
Crystals
silicon
crystals

3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., Feb 1 2018, In : Journal of Crystal Growth. 483, p. 269-274 6 p.

Research output: Contribution to journalArticle

Silicon
Crystallization
Crystal growth
floating
crystal growth
2016
1 Citation (Scopus)

Orientation dependency of dislocation generation in Si growth process

Jiptner, K., Miyamura, Y., Gao, B., Harada, H., Kakimoto, K. & Sekiguchi, T., Jan 1 2016, Gettering and Defect Engineering in Semiconductor Technology XVI. Pichler, P. & Pichler, P. (eds.). Trans Tech Publications Ltd, p. 15-20 6 p. (Solid State Phenomena; vol. 242).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ingots
Dislocations (crystals)
Crystals
ingots
Crystallization
2011
40 Citations (Scopus)

Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells

Nakano, S., Chen, X. J., Gao, B. & Kakimoto, K., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 280-282 3 p.

Research output: Contribution to journalArticle

Silicon
numerical analysis
Numerical analysis
Solar cells
solar cells
2015
2 Citations (Scopus)

Fluid Dynamics: Modeling and Analysis

Kakimoto, K. & Gao, B., Jan 1 2015, Handbook of Crystal Growth: Bulk Crystal Growth: Second Edition. Elsevier Inc., Vol. 2. p. 845-870 26 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

fluid dynamics
crystal growth
impurities
forced convection
free convection
2011
9 Citations (Scopus)

Tight-binding approach to initial stage of the graphitization process on a vicinal SiC surface

Inoue, M., Kangawa, Y., Wakabayashi, K., Kageshima, H. & Kakimoto, K., Mar 1 2011, In : Japanese journal of applied physics. 50, 3, 038003.

Research output: Contribution to journalArticle

Graphitization
graphitization
Graphene
graphene
Atoms
2017
9 Citations (Scopus)

Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth

Inatomi, Y., Kangawa, Y., Ito, T., Suski, T., Kumagai, Y., Kakimoto, K. & Koukitu, A., Jul 2017, In : Japanese Journal of Applied Physics. 56, 7, 078003.

Research output: Contribution to journalArticle

Composition effects
Metallorganic vapor phase epitaxy
pulling
vapor phase epitaxy
Tensile strain
2012
3 Citations (Scopus)

Investigation of gan solution growth processes on ga- and n-faces by molecular dynamics simulation

Kawamura, T., Kangawa, Y., Kakimoto, K., Kotake, S. & Suzuki, Y., Jan 1 2012, In : Japanese journal of applied physics. 51, 1 PART 2, 01AF06.

Research output: Contribution to journalArticle

Molecular dynamics
molecular dynamics
Computer simulation
simulation
adhesives
2013

Thermodynamic analysis of coherently grown GaAsN/Ge: Effects of different gaseous sources

Kawano, J., Kangawa, Y., Yayama, T., Kakimoto, K. & Koukitu, A., Apr 1 2013, In : Japanese journal of applied physics. 52, 4 PART 1, 045601.

Research output: Contribution to journalArticle

dimethylhydrazines
Thermodynamics
thermodynamics
Vapors
vapors
2017
3 Citations (Scopus)

Study on the usage of a commercial software (Comsol-Multiphysics®) for dislocation multiplication model

Gallien, B., Albaric, M., Duffar, T., Kakimoto, K. & M'Hamdi, M., Jan 1 2017, In : Journal of Crystal Growth. 457, p. 60-64 5 p.

Research output: Contribution to journalArticle

ingots
Ingots
multiplication
computer programs
Silicon
2014

Role of the surface N-H molecular layer in high quality In-RICH InGaN growth by MOVPE

Yayama, T., Kangawa, Y. & Kakimoto, K., Jan 1 2014, In : JOURNAL OF CHEMICAL ENGINEERING OF JAPAN. 47, 7 SPECIAL ISSUE, p. 615-619 5 p.

Research output: Contribution to journalConference article

Vapor phase epitaxy
Metals
Enthalpy
Atoms
Surface reconstruction
2012
18 Citations (Scopus)

First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001)

Inoue, M., Kageshima, H., Kangawa, Y. & Kakimoto, K., Aug 8 2012, In : Physical Review B - Condensed Matter and Materials Physics. 86, 8, 085417.

Research output: Contribution to journalArticle

Graphite
Graphene
graphene
Atoms
rings
2011

Thermodynamic analysis for the prediction of N composition in coherently grown GaAsN for a multi-junction solar cell

Kawano, J., Kangawa, Y., Yayama, T., Ito, T., Kakimoto, K. & Koukitu, A., Dec 1 2011, Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. p. 496-500 5 p. 6186002

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thermodynamics
Chemical analysis
Partial pressure
Multi-junction solar cells
Nitrogen
2016
2 Citations (Scopus)

Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics

Kawamura, T., Mizutani, M., Suzuki, Y., Kangawa, Y. & Kakimoto, K., Mar 2016, In : Japanese Journal of Applied Physics. 55, 3, 031301.

Research output: Contribution to journalArticle

Screw dislocations
screw dislocations
Strain energy
Dislocations (crystals)
Molecular dynamics
2011
22 Citations (Scopus)

Novel solution growth method of bulk AlN using Al and Li3N solid sources

Kangawa, Y., Toki, R., Yayama, T., Epelbaum, B. M. & Kakimoto, K., Sep 1 2011, In : Applied Physics Express. 4, 9, 095501.

Research output: Contribution to journalArticle

seeds
Crystals
Epilayers
crystals
Seed
2015
2 Citations (Scopus)

Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN

Kangawa, Y., Kusaba, A., Sumiyoshi, H., Miyake, H., Boćkowski, M. & Kakimoto, K., Jun 1 2015, In : Applied Physics Express. 8, 6, 065601.

Research output: Contribution to journalArticle

liquid-solid interfaces
Real time systems
Liquids
templates
Polycrystals
2011
1 Citation (Scopus)

Calculation of phase diagrams of the Li3N-Al system for AlN growth

Yayama, T., Kangawa, Y. & Kakimoto, K., May 1 2011, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 8, 5, p. 1581-1584 4 p.

Research output: Contribution to journalArticle

phase diagrams
thermal analysis
thermodynamics
ternary systems
synthesis
2017
9 Citations (Scopus)

On the phase transformation of single-crystal 4H-SiC during nanoindentation

Matsumoto, M., Huang, H., Harada, H., Kakimoto, K. & Yan, J., Jun 12 2017, In : Journal of Physics D: Applied Physics. 50, 26, 265303.

Research output: Contribution to journalArticle

Nanoindentation
nanoindentation
Silicon carbide
silicon carbides
phase transformations
2012
27 Citations (Scopus)
Monocrystalline silicon
Seed
casts
seeds
Iron
2018
2 Citations (Scopus)

Effect of oxygen on dislocation multiplication in silicon crystals

Fukushima, W., Harada, H., Miyamura, Y., Imai, M., Nakano, S. & Kakimoto, K., Mar 15 2018, In : Journal of Crystal Growth. 486, p. 45-49 5 p.

Research output: Contribution to journalArticle

Silicon
Dislocations (crystals)
multiplication
Oxygen
Crystals
1 Citation (Scopus)

3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., May 1 2018, In : Crystal Research and Technology. 53, 5, 1700246.

Research output: Contribution to journalArticle

Silicon
Crystallization
Crystal growth
floating
crystal growth
2017
12 Citations (Scopus)

Thermodynamic analysis of (0001) and (0001) GaN metalorganic vapor phase epitaxy

Kusaba, A., Kangawa, Y., Kempisty, P., Valencia, H., Shiraishi, K., Kumagai, Y., Kakimoto, K. & Koukitu, A., Jul 2017, In : Japanese Journal of Applied Physics. 56, 7, 070304.

Research output: Contribution to journalArticle

Metallorganic vapor phase epitaxy
vapor phase epitaxy
Thermodynamics
thermodynamics
Surface states
9 Citations (Scopus)

DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1 ) metalorganic vapor phase epitaxy

Kempisty, P., Kangawa, Y., Kusaba, A., Shiraishi, K., Krukowski, S., Bockowski, M., Kakimoto, K. & Amano, H., Oct 2 2017, In : Applied Physics Letters. 111, 14, 141602.

Research output: Contribution to journalArticle

vapor phase epitaxy
density functional theory
carbon
impurities
diluents
2015
2 Citations (Scopus)

Ab initio study of GaAs(100) surface stability over As2, H2 and N2 as a model for vapor-phase epitaxy of GaAs1-xNx

Valencia, H., Kangawa, Y. & Kakimoto, K., Dec 15 2015, In : Journal of Crystal Growth. 432, p. 6-14 9 p., 22983.

Research output: Contribution to journalArticle

surface stability
Vapor phase epitaxy
vapor phase epitaxy
Gases
Chemical potential
2020

Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125404.

Research output: Contribution to journalArticle

pulling
Silicon
Crystallization
Crystal growth
crystal growth
2014
8 Citations (Scopus)

Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability

Kangawa, Y., Ito, T., Koukitu, A. & Kakimoto, K., Oct 1 2014, In : Japanese Journal of Applied Physics. 53, 10, 100202.

Research output: Contribution to journalReview article

surface stability
structural stability
Epitaxial growth
epitaxy
partial pressure
86 Citations (Scopus)

Effects of sodium on electrical properties in Cu2ZnSnS 4 single crystal

Nagaoka, A., Miyake, H., Taniyama, T., Kakimoto, K., Nose, Y., Scarpulla, M. A. & Yoshino, K., Jan 1 2014, In : Applied Physics Letters. 104, 15, 152101.

Research output: Contribution to journalArticle

electrical properties
sodium
single crystals
hole mobility
Hall effect
2017
2 Citations (Scopus)

Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells

Nakano, S., Gao, B., Jiptner, K., Harada, H., Miyamura, Y., Sekiguchi, T., Fukuzawa, M. & Kakimoto, K., Sep 15 2017, In : Journal of Crystal Growth. 474, p. 130-134 5 p.

Research output: Contribution to journalArticle

ingots
Silicon
Ingots
numerical analysis
Numerical analysis
2011
33 Citations (Scopus)

Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells

Li, Z., Liu, L., Ma, W. & Kakimoto, K., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 304-312 9 p.

Research output: Contribution to journalArticle

Argon
Silicon solar cells
furnaces
Solidification
Furnaces
2015

Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells

Gao, B. & Kakimoto, K., Jan 1 2015, Defects and Impurities in Silicon Materials - An Introduction to Atomic-Level Silicon Engineering. Yoshida, Y. & Langouche, G. (eds.). Springer Verlag, p. 241-272 32 p. (Lecture Notes in Physics; vol. 916).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

numerical analysis
crystal growth
solar cells
impurities
silicon
2013
7 Citations (Scopus)

Development of crystal growth technique of silicon by the Czochralski method

Kakimoto, K., Aug 1 2013, In : Acta Physica Polonica A. 124, 2, p. 227-230 4 p.

Research output: Contribution to journalArticle

Czochralski method
furnaces
crystal growth
interstitials
silicon
9 Citations (Scopus)
Silicon
Fluxes
Cooling
Chemical activation
Dislocations (crystals)
2014
17 Citations (Scopus)

Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory

Shiramomo, T., Gao, B., Mercier, F., Nishizawa, S., Nakano, S. & Kakimoto, K., Jan 1 2014, In : Journal of Crystal Growth. 385, p. 95-99 5 p.

Research output: Contribution to journalArticle

seeds
Nucleation
Vapors
nucleation
Impurities
2012
4 Citations (Scopus)

The impact of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AlN crystals

Gao, B., Nakano, S. & Kakimoto, K., Jan 1 2012, In : Journal of Crystal Growth. 338, 1, p. 69-74 6 p.

Research output: Contribution to journalArticle

Sublimation
Crystallization
sublimation
seeds
Crystals