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  • Shinichi Nishizawa
2020

Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125404.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2012

Analysis of growth velocity of SiC growth by the physical vapor transport method

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S. & Nishizawa, S. I., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 25-28 4 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2013

Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates

Leone, S., Henry, A., Janzén, E. & Nishizawa, S., Jan 1 2013, In : Journal of Crystal Growth. 362, 1, p. 170-173 4 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)
2014

Impact of semiconductor on diamond structure for power supply on chip applications

Nakagawa, K., Kodama, T., Matsumoto, S., Yamada, T., Hasegawa, M. & Nishizawa, S., Apr 2014, In : Japanese Journal of Applied Physics. 53, 4 SPEC. ISSUE, 04EP16.

Research output: Contribution to journalArticle

6 Citations (Scopus)
2011

Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics

Mercier, F. & Nishizawa, S. I., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 385-388 4 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)
2019

In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Miyamura, Y., Harada, H., Liu, X., Nakano, S., Nishizawa, S. & Kakimoto, K., Feb 1 2019, In : Journal of Crystal Growth. 507, p. 154-156 3 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2018

Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. & Kakimoto, K., Oct 1 2018, In : Journal of Crystal Growth. 499, p. 8-12 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2019

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Tsutsui, K., Iwai, H., Ogura, A., Nishizawa, S. & 3 others, Omura, I., Ohashi, H. & Hiramoto, T., Jan 16 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 8.4.1-8.4.4 8614491. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
2020

Surface Buffer IGBT for High Total Performance

Saito, W. & Nishizawa, S. I., Aug 2020, In : IEEE Transactions on Electron Devices. 67, 8, p. 3263-3269 7 p., 9115639.

Research output: Contribution to journalArticle

2017

Experimental verification of a 3D scaling principle for low Vce(sat) IGBT

Kakushima, K., Hoshii, T., Tsutsui, K., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I. & 2 others, Ohashi, H. & Iwai, H., Jan 31 2017, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 10.6.1-10.6.4 7838390. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)
2020

Assist Gate MOSFETs for Improvement of On-Resistance and Turn-Off Loss Trade-Off

Saito, W. & Nishizawa, S. I., Jul 2020, In : IEEE Electron Device Letters. 41, 7, p. 1060-1062 3 p., 9085363.

Research output: Contribution to journalArticle

2012

Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory

Shiramomo, T., Gao, B., Mercier, F., Nishizawa, S., Nakano, S., Kangawa, Y. & Kakimoto, K., Aug 1 2012, In : Journal of Crystal Growth. 352, 1, p. 177-180 4 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)
2014

Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

Nakajima, A., Liu, P., Ogura, M., Makino, T., Kakushima, K., Nishizawa, S., Ohashi, H., Yamasaki, S. & Iwai, H., Apr 21 2014, In : Journal of Applied Physics. 115, 15, 153707.

Research output: Contribution to journalArticle

19 Citations (Scopus)
2019
Open Access
1 Citation (Scopus)
2018

ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier

Hasegawa, K., Nishizawa, S. & Omura, I., Sep 2018, In : Microelectronics Reliability. 88-90, p. 433-437 5 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)
2016

A new evaluation circuit with a low-voltage inverter intended for capacitors used in a high-power three-phase inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., May 10 2016, 2016 IEEE Applied Power Electronics Conference and Exposition, APEC 2016. Institute of Electrical and Electronics Engineers Inc., p. 3032-3037 6 p. 7468295. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; vol. 2016-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections

Hasegawa, K., Kozuma, K., Tsuzaki, K., Omura, I. & Nishizawa, S., Sep 1 2016, In : Microelectronics Reliability. 64, p. 98-100 3 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)
2011

Design and analysis of a bus bar structure for a medium voltage inverter

Ando, M., Wada, K., Takao, K., Kanai, T., Nishizawa, S. & Ohashi, H., Oct 11 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011. 6020404. (Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)
2019

Freewheeling Diode Technology with Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications

Nakamura, K., Masuoka, F., Nishii, A., Nishizawa, S. I. & Furukawa, A., Nov 2019, In : IEEE Transactions on Electron Devices. 66, 11, p. 4842-4849 8 p., 8852709.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2013

Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

Liu, P., Kakushima, K., Iwai, H., Nakajima, A., Makino, T., Ogura, M., Nishizawa, S. & Ohashi, H., 2013, 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. p. 155-158 4 p. 6695585. (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2019

Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes

Kobayashi, H., Yokogawa, R., Kinoshita, K., Numasawa, Y., Ogura, A., Nishizawa, S., Saraya, T., Ito, K., Takakura, T., Suzuki, S. I., Fukui, M., Takeuchi, K. & Hiramoto, T., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 59, SBBD07.

Research output: Contribution to journalArticle

Open Access
2015

An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Nakajima, A., Nishizawa, S. I., Kubota, S., Kayanuma, R., Tsutsui, K., Ohashi, H., Kakushima, K., Wakabayashi, H. & Iwai, H., Oct 30 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc., 7314489. (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)
2016

Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory

Araki, S., Gao, B., Nishizawa, S., Nakano, S. & Kakimoto, K., May 1 2016, In : Crystal Research and Technology. 51, 5, p. 344-348 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2018

GaN-based complementary metal-oxide- semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

Nakajima, A., Kubota, S., Tsutsui, K., Kakushima, K., Wakabayashi, H., Iwai, H., Nishizawa, S. I. & Ohashi, H., Apr 10 2018, In : IET Power Electronics. 11, 4, p. 689-694 6 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)
2011

Diamond power devices - Possbility of high voltage applicatios

Yamasaki, S., Matsumoto, T., Oyama, K., Kato, H., Ogura, M., Takeuchi, D., Makino, T., Nishizawa, S., Oohash, H. & Okushi, H., 2011, 2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Proceedings. p. 418-420 3 p. 6123021. (2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2019

Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

Watanabe, M., Shigyo, N., Hoshii, T., Furukawa, K., Kakushima, K., Satoh, K., Matsudai, T., Saraya, T., Takakura, T., Itou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Nakajima, A., Nishizawa, S. I., Tsutsui, K., Hiramoto, T., Ohashi, H. & 1 others, Iwai, H., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 311-314 4 p. 8757640. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)