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Author

  • Shinichi Nishizawa
2019

Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Hoshii, T., Nakajima, A., Nishizawa, S. I., Ohashi, H., Kakushima, K., Wakabayashi, H. & Tsutsui, K., 2019, In : Japanese journal of applied physics. 58, 6, 061006.

Research output: Contribution to journalArticle

Open Access
2017

An evaluation circuit for DC-link capacitors used in a single- phase PWM inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., Jan 1 2017, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 7990846. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2019

3300V Scaled IGBTs Driven by 5V Gate Voltage

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A. & 4 others, Nishizawa, S. I., Omura, I., Ohashi, H. & Hiramoto, T., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 43-46 4 p. 8757626. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
2011

Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics

Mercier, F. & Nishizawa, S. I., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 385-388 4 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)
2012

Chloride-based CVD growth of silicon carbide for electronic applications

Pedersen, H., Leone, S., Kordina, O., Henry, A., Nishizawa, S., Koshka, Y. & Janzén, E., Apr 11 2012, In : Chemical Reviews. 112, 4, p. 2434-2453 20 p.

Research output: Contribution to journalReview article

65 Citations (Scopus)
2013

Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates

Leone, S., Henry, A., Janzén, E. & Nishizawa, S., Jan 1 2013, In : Journal of Crystal Growth. 362, 1, p. 170-173 4 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Temperature-independent two-dimensional hole gas confined at GaN/AlGaN heterointerface

Nakajima, A., Liu, P., Ogura, M., Makino, T., Nishizawa, S. I., Yamasaki, S., Ohashi, H., Kakushima, K. & Iwai, H., Sep 2013, In : Applied Physics Express. 6, 9, 091002.

Research output: Contribution to journalArticle

11 Citations (Scopus)
2016

Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections

Hasegawa, K., Kozuma, K., Tsuzaki, K., Omura, I. & Nishizawa, S., Sep 1 2016, In : Microelectronics Reliability. 64, p. 98-100 3 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)
2017

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)

Tsutsui, K., Kakushima, K., Hoshii, T., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I. & 2 others, Ohashi, H. & Iwai, H., Jul 1 2017, Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Qin, Y., Hong, Z. & Tang, T-A. (eds.). IEEE Computer Society, p. 1137-1140 4 p. (Proceedings of International Conference on ASIC; vol. 2017-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2014

Impact of semiconductor on diamond structure for power supply on chip applications

Nakagawa, K., Kodama, T., Matsumoto, S., Yamada, T., Hasegawa, M. & Nishizawa, S., Apr 2014, In : Japanese Journal of Applied Physics. 53, 4 SPEC. ISSUE, 04EP16.

Research output: Contribution to journalArticle

6 Citations (Scopus)
2012

Silicon carbide bulk crystal growth modeling from atomic scale to reactor scale

Nishizawa, S. I., Dec 1 2012, Gallium Nitride and Silicon Carbide Power Technologies 2. 3 ed. p. 119-126 8 p. (ECS Transactions; vol. 50, no. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bulk and surface effects on the polytype stability in SiC crystals

Mercier, F. & Nishizawa, S., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 41-44 4 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2020

Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation

Luo, P., Madathil, S. N. E., Nishizawa, S. I. & Saito, W., Sep 2020, Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020. Institute of Electrical and Electronics Engineers Inc., p. 470-473 4 p. 9170129. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2020-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2011

Thermodynamic analysis of SiC polytype growth by physical vapor transport method

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S. & Nishizawa, S. I., Jun 1 2011, In : Journal of Crystal Growth. 324, 1, p. 78-81 4 p.

Research output: Contribution to journalArticle

18 Citations (Scopus)
2016

Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory

Araki, S., Gao, B., Nishizawa, S., Nakano, S. & Kakimoto, K., May 1 2016, In : Crystal Research and Technology. 51, 5, p. 344-348 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2020

N-Buffer Design for Silicon-Based Power Diode Targeting High Dynamic Robustness and High Operating Temperature over 448 K

Nakamura, K., Nishizawa, S. I. & Furukawa, A., Jun 2020, In : IEEE Transactions on Electron Devices. 67, 6, p. 2437-2444 8 p., 9098162.

Research output: Contribution to journalArticle

Evaluation of sic­mosfet by repetitive uis tests for solid state circuit breaker

Sagara, M., Wada, K. & Nishizawa, SI., 2020, Silicon Carbide and Related Materials 2019. Yano, H., Ohshima, T., Eto, K., Mitani, T., Harada, S. & Tanaka, Y. (eds.). Trans Tech Publications Ltd, p. 1010-1015 6 p. (Materials Science Forum; vol. 1004 MSF).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2019

Switching of 3300v scaled igbt by 5v gate drive

Hiramoto, T., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Sarava, T., Iwai, H., Ogura, A., Nishizawa, S., Omura, I., Ohash, H., Itou, K., Takakura, T., Fukui, M. & 4 others, Suzuki, S., Takeuchi, K., Tsukuda, M. & Numasawa, Y., Oct 2019, Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019. Ye, F. & Tang, T-A. (eds.). IEEE Computer Society, 8983633. (Proceedings of International Conference on ASIC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2016

A new evaluation circuit with a low-voltage inverter intended for capacitors used in a high-power three-phase inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., May 10 2016, 2016 IEEE Applied Power Electronics Conference and Exposition, APEC 2016. Institute of Electrical and Electronics Engineers Inc., p. 3032-3037 6 p. 7468295. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; vol. 2016-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)
2019
Open Access
2 Citations (Scopus)
2013

4.5 kV - 400 A SiC-PiN diode and Si-IEGT hybrid pair module for high switching frequency operation

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Kanai, T., Shinohe, T. & Ohashi, H., Jan 1 2013.

Research output: Contribution to conferencePaper

2 Citations (Scopus)
2019

Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes

Kobayashi, H., Yokogawa, R., Kinoshita, K., Numasawa, Y., Ogura, A., Nishizawa, S., Saraya, T., Ito, K., Takakura, T., Suzuki, S. I., Fukui, M., Takeuchi, K. & Hiramoto, T., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 59, SBBD07.

Research output: Contribution to journalArticle

Open Access
2020

High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation

Luo, P., Ekkanath Madathil, S. N., Nishizawa, S. I. & Saito, W., Mar 2020, APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., p. 686-689 4 p. 9124293. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; vol. 2020-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2019

Effect of nitrogen and aluminium on silicon carbide polytype stability

Nishizawa, S. & F.Mercier, Jul 15 2019, In : Journal of Crystal Growth. 518, p. 99-102 4 p.

Research output: Contribution to journalArticle