Find Research Outputs

Search in all content

Filters for Research Output

Search concepts
Selected filters

Publication Year

  • 2020
  • 2019
  • 2018
  • 2017
  • 2016
  • 2015
  • 2014
  • 2012
  • 2011

Author

  • Shinichi Nishizawa
2016

Wafer requirement for future power devices

Nishizawa, S. I., Jan 5 2016, TENCON 2015 - 2015 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 7372890. (IEEE Region 10 Annual International Conference, Proceedings/TENCON; vol. 2016-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2011

Numerical investigation of the growth rate enhancement of SiC crystal growth from silicon melts

Mercier, F. & Nishizawa, S. I., Mar 1 2011, In : Japanese journal of applied physics. 50, 3, 035603.

Research output: Contribution to journalArticle

14 Citations (Scopus)
2012

Role of surface effects on silicon carbide polytype stability

Mercier, F. & Nishizawa, S. I., Dec 1 2012, In : Journal of Crystal Growth. 360, 1, p. 189-192 4 p.

Research output: Contribution to journalArticle

23 Citations (Scopus)

Gas-phase modeling of chlorine-based chemical vapor deposition of silicon carbide

Leone, S., Kordina, O., Henry, A., Nishizawa, S. I., Danielsson, Ö. & Janzén, E., Apr 4 2012, In : Crystal Growth and Design. 12, 4, p. 1977-1984 8 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Bulk and surface effects on the polytype stability in SiC crystals

Mercier, F. & Nishizawa, S., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 41-44 4 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2020

Editorial

Derby, J. J., Kakimoto, K. & Nishizawa, S. I., May 15 2020, In : Journal of Crystal Growth. 538, 125594.

Research output: Contribution to journalEditorial

2012

Silicon carbide bulk crystal growth modeling from atomic scale to reactor scale

Nishizawa, S. I., Dec 1 2012, Gallium Nitride and Silicon Carbide Power Technologies 2. 3 ed. p. 119-126 8 p. (ECS Transactions; vol. 50, no. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2015

The silicon on diamond structure by low-temperature bonding technique

Duangchan, S., Uchikawa, Y., Koishikawa, Y., Akiyoshi, B., Nakagawa, K., Matsumoto, S., Hasegawa, M. & Nishizawa, S., Jul 15 2015, 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015. Institute of Electrical and Electronics Engineers Inc., p. 187-192 6 p. 7159590. (Proceedings - Electronic Components and Technology Conference; vol. 2015-July).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)
2020

High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation

Luo, P., Ekkanath Madathil, S. N., Nishizawa, S. I. & Saito, W., Mar 2020, APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., p. 686-689 4 p. 9124293. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; vol. 2020-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

N-Buffer Design for Silicon-Based Power Diode Targeting High Dynamic Robustness and High Operating Temperature over 448 K

Nakamura, K., Nishizawa, S. I. & Furukawa, A., Jun 2020, In : IEEE Transactions on Electron Devices. 67, 6, p. 2437-2444 8 p., 9098162.

Research output: Contribution to journalArticle

2018

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment

Kakushima, K., Hoshii, T., Watanabe, M., Shizyo, N., Furukawa, K., Saraya, T., Takakura, T., Itou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Numasawa, Y., Ogura, A., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H. & Iwai, H., Oct 22 2018, 2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018. Institute of Electrical and Electronics Engineers Inc., p. 105-106 2 p. 8502399. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately

Hoshii, T., Furukawa, K., Kakushima, K., Watanabe, M., Shigvo, N., Saraya, T., Takakura, T., Ltou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H. & Lwai, H., Oct 8 2018, 2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Editions Frontieres, p. 26-29 4 p. 8486870. (European Solid-State Device Research Conference; vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
2014

Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory

Shiramomo, T., Gao, B., Mercier, F., Nishizawa, S., Nakano, S. & Kakimoto, K., Jan 1 2014, In : Journal of Crystal Growth. 385, p. 95-99 5 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

Nakajima, A., Nishizawa, S., Ohashi, H., Yonezawa, H., Tsutsui, K., Kakushima, K., Wakabayashi, H. & Iwai, H., Jan 1 2014, Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014. Institute of Electrical and Electronics Engineers Inc., p. 241-244 4 p. 6856021. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)
2019

Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Hoshii, T., Nakajima, A., Nishizawa, S. I., Ohashi, H., Kakushima, K., Wakabayashi, H. & Tsutsui, K., 2019, In : Japanese journal of applied physics. 58, 6, 061006.

Research output: Contribution to journalArticle

Open Access

Effect of nitrogen and aluminium on silicon carbide polytype stability

Nishizawa, S. & F.Mercier, Jul 15 2019, In : Journal of Crystal Growth. 518, p. 99-102 4 p.

Research output: Contribution to journalArticle

2016

Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., May 2016, In : IEEE Transactions on Industrial Electronics. 63, 5, p. 2679-2687 9 p., 7362196.

Research output: Contribution to journalArticle

14 Citations (Scopus)
2014

2.5kV, 200kW bi-directional isolated DC/DC converter for medium-voltage applications

Matsuoka, Y., Wada, K., Nakahara, M., Takao, K., Sung, K., Ohashi, H. & Nishizawa, S., Jan 1 2014, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, p. 744-749 6 p. 6869671

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Experimental investigation of normally-on type bidirectional switch for indirect Matrix Converters

Sung, K., Iijima, R., Nishizawa, S., Norigoe, I. & Ohashi, H., Jan 1 2014, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, p. 117-122 6 p. 6869568. (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)
2015

Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET

Nakajima, A., Saito, W., Nishizawa, S. I. & Ohashi, H., 2015, PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 7149120

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
2012

Design and implementation of a non-destructive test circuit for SiC-MOSFETs

Wada, K., Nishizawa, S. & Ohashi, H., 2012, Conference Proceedings - 2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012. Vol. 1. p. 10-15 6 p. 6258831

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)
2019

3300V Scaled IGBTs Driven by 5V Gate Voltage

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A. & 4 others, Nishizawa, S. I., Omura, I., Ohashi, H. & Hiramoto, T., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 43-46 4 p. 8757626. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
2012

4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T. & Ohashi, H., Dec 17 2012, 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012. p. 1509-1514 6 p. 6342635. (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
2015

High-speed dicing of SiC wafers by femtosecond pulsed laser

Nakajima, A., Tateishi, Y., Murakami, H., Takahashi, H., Ota, M., Kosugi, R., Mitani, T., Nishizawa, S. I. & Ohashi, H., Jan 1 2015, Silicon Carbide and Related Materials 2014. Chaussende, D. & Ferro, G. (eds.). Trans Tech Publications Ltd, p. 524-527 4 p. (Materials Science Forum; vol. 821-823).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Nakajima, A., Nishizawa, S. I., Ohashi, H., Kayanuma, R., Tsutsui, K., Kubota, S., Kakushima, K., Wakabayashi, H. & Iwai, H., Jun 12 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., p. 357-360 4 p. 7123463. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2015-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)
2017

An evaluation circuit for DC-link capacitors used in a single- phase PWM inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., Jan 1 2017, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 7990846. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2019

Trend in thermal resistance of advanced power modules

Shishido, N., Tsukuda, M. & Nishizawa, S. I., Jan 1 2019, PCIM Europe-International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019. Amrhein, M. & Schulze Niehoff, A. (eds.). Mesago PCIM GmbH, p. 104-108 5 p. (PCIM Europe Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2020

Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Kakushima, K., Hoshii, T., Tsutsui, K., Iwai, H., Nishizawa, S. I., Omura, I. & Hiramoto, T., Apr 1 2020, In : Japanese journal of applied physics. 59, SG, SGGD18.

Research output: Contribution to journalArticle

2017

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)

Tsutsui, K., Kakushima, K., Hoshii, T., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I. & 2 others, Ohashi, H. & Iwai, H., Jul 1 2017, Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Qin, Y., Hong, Z. & Tang, T-A. (eds.). IEEE Computer Society, p. 1137-1140 4 p. (Proceedings of International Conference on ASIC; vol. 2017-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2019

Switching of 3300v scaled igbt by 5v gate drive

Hiramoto, T., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Sarava, T., Iwai, H., Ogura, A., Nishizawa, S., Omura, I., Ohash, H., Itou, K., Takakura, T., Fukui, M. & 4 others, Suzuki, S., Takeuchi, K., Tsukuda, M. & Numasawa, Y., Oct 2019, Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019. Ye, F. & Tang, T-A. (eds.). IEEE Computer Society, 8983633. (Proceedings of International Conference on ASIC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2011

Thermodynamic analysis of SiC polytype growth by physical vapor transport method

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S. & Nishizawa, S. I., Jun 1 2011, In : Journal of Crystal Growth. 324, 1, p. 78-81 4 p.

Research output: Contribution to journalArticle

18 Citations (Scopus)
2018

Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?

Miyamura, Y., Harada, H., Nakano, S., Nishizawa, S. & Kakimoto, K., May 1 2018, In : Journal of Crystal Growth. 489, p. 1-4 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2019

Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs

Takeuchi, K., Fukui, M., Saraya, T., Itou, K., Takakura, T., Suzuki, S., Numasawa, Y., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsukuda, M., Ogura, A., Tsutsui, K., Iwai, H., Nishizawa, S., Omura, I., Ohashi, H. & 1 others, Hiramoto, T., Mar 2019, 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. Institute of Electrical and Electronics Engineers Inc., p. 98-101 4 p. 8730922. (IEEE International Conference on Microelectronic Test Structures; vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2020

Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs

Takeuchi, K., Fukui, M., Saraya, T., Itou, K., Takakura, T., Suzuki, S., Numasawa, Y., Shigyo, N., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A., Saito, W., Nishizawa, S. I., Tsukuda, M., Omura, I. & 2 others, Ohashi, H. & Hiramoto, T., May 2020, In : IEEE Transactions on Semiconductor Manufacturing. 33, 2, p. 159-165 7 p., 8986674.

Research output: Contribution to journalArticle

2018

Relationship between carbon concentration and carrier lifetime in CZ-Si crystals

Miyamura, Y., Harada, H., Nakano, S., Nishizawa, S. & Kakimoto, K., Mar 15 2018, In : Journal of Crystal Growth. 486, p. 56-59 4 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2020

CSTBT™ technology for high voltage applications with high dynamic robustness and low overall loss

Nakamura, K., Chen, Z., Nishizawa, S. I. & Furukawa, A., Jul 2020, In : Microelectronics Reliability. 110, 113635.

Research output: Contribution to journalArticle

2014

Erratum: Impact of semiconductor on diamond structure for power supply on chip applications (Japanese Journal of Applied Physics (2014) 53 (04EP16))

Nakagawa, K., Kodama, T., Matsumoto, S., Yamada, T., Hasegawa, M. & Nishizawa, S., Jun 2014, In : Japanese journal of applied physics. 53, 6, 069202.

Research output: Contribution to journalComment/debate

2011

Effect of low frequency magnetic field on SiC solution growth

Mercier, F. & Nishizawa, S. I., Apr 28 2011, Silicon Carbide and Related Materials 2010. p. 32-35 4 p. (Materials Science Forum; vol. 679-680).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2020

On-Resistance Limit Estimation of 100 V-class Field-Plate Trench Power MOSFETs Optimized Oxide Thickness

Ogawa, T., Saito, W. & Nishizawa, S. I., Jul 2020, In : IEEE Electron Device Letters. 41, 7, p. 1063-1065 3 p., 9109292.

Research output: Contribution to journalArticle

Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance

Saito, W. & Nishizawa, S. I., Aug 2020, In : IEEE Transactions on Electron Devices. 67, 8, p. 3285-3290 6 p., 9127192.

Research output: Contribution to journalArticle

2012

Analysis of growth velocity of SiC growth by the physical vapor transport method

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S. & Nishizawa, S. I., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 25-28 4 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chloride-based CVD growth of silicon carbide for electronic applications

Pedersen, H., Leone, S., Kordina, O., Henry, A., Nishizawa, S., Koshka, Y. & Janzén, E., Apr 11 2012, In : Chemical Reviews. 112, 4, p. 2434-2453 20 p.

Research output: Contribution to journalReview article

65 Citations (Scopus)
2018

DC-bias-voltage dependence of degradation of aluminum electrolytic capacitors

Hasegawa, K., Tsuzaki, K. & Nishizawa, S., Apr 1 2018, In : Microelectronics Reliability. 83, p. 115-118 4 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)
2020

Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125405.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125404.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2019

Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation

Luo, P., Ekkanath Madathil, S. N., Nishizawa, S. I. & Saito, W., Dec 2019, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993596. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Miyamura, Y., Harada, H., Liu, X., Nakano, S., Nishizawa, S. & Kakimoto, K., Feb 1 2019, In : Journal of Crystal Growth. 507, p. 154-156 3 p.

Research output: Contribution to journalArticle

2014

Impact of semiconductor on diamond structure for power supply on chip applications

Nakagawa, K., Kodama, T., Matsumoto, S., Yamada, T., Hasegawa, M. & Nishizawa, S., Apr 2014, In : Japanese Journal of Applied Physics. 53, 4 SPEC. ISSUE, 04EP16.

Research output: Contribution to journalArticle

6 Citations (Scopus)
2011

Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics

Mercier, F. & Nishizawa, S. I., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 385-388 4 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)
2018

Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. & Kakimoto, K., Oct 1 2018, In : Journal of Crystal Growth. 499, p. 8-12 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)