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Author

  • Shinichi Nishizawa
2011

Design and analysis of a bus bar structure for a medium voltage inverter

Ando, M., Wada, K., Takao, K., Kanai, T., Nishizawa, S. & Ohashi, H., Oct 11 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011. 6020404. (Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Diamond power devices - Possbility of high voltage applicatios

Yamasaki, S., Matsumoto, T., Oyama, K., Kato, H., Ogura, M., Takeuchi, D., Makino, T., Nishizawa, S., Oohash, H. & Okushi, H., 2011, 2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Proceedings. p. 418-420 3 p. 6123021. (2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Effect of low frequency magnetic field on SiC solution growth

Mercier, F. & Nishizawa, S. I., Apr 28 2011, Silicon Carbide and Related Materials 2010. p. 32-35 4 p. (Materials Science Forum; vol. 679-680).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Numerical investigation of the growth rate enhancement of SiC crystal growth from silicon melts

Mercier, F. & Nishizawa, S. I., Mar 1 2011, In : Japanese journal of applied physics. 50, 3, 035603.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics

Mercier, F. & Nishizawa, S. I., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 385-388 4 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Thermodynamic analysis of SiC polytype growth by physical vapor transport method

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S. & Nishizawa, S. I., Jun 1 2011, In : Journal of Crystal Growth. 324, 1, p. 78-81 4 p.

Research output: Contribution to journalArticle

18 Citations (Scopus)
2012

4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T. & Ohashi, H., Dec 17 2012, 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012. p. 1509-1514 6 p. 6342635. (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Analysis of growth velocity of SiC growth by the physical vapor transport method

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S. & Nishizawa, S. I., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 25-28 4 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bulk and surface effects on the polytype stability in SiC crystals

Mercier, F. & Nishizawa, S., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 41-44 4 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Chloride-based CVD growth of silicon carbide for electronic applications

Pedersen, H., Leone, S., Kordina, O., Henry, A., Nishizawa, S., Koshka, Y. & Janzén, E., Apr 11 2012, In : Chemical Reviews. 112, 4, p. 2434-2453 20 p.

Research output: Contribution to journalReview article

65 Citations (Scopus)

Design and implementation of a non-destructive test circuit for SiC-MOSFETs

Wada, K., Nishizawa, S. & Ohashi, H., 2012, Conference Proceedings - 2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012. Vol. 1. p. 10-15 6 p. 6258831

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Gas-phase modeling of chlorine-based chemical vapor deposition of silicon carbide

Leone, S., Kordina, O., Henry, A., Nishizawa, S. I., Danielsson, Ö. & Janzén, E., Apr 4 2012, In : Crystal Growth and Design. 12, 4, p. 1977-1984 8 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Role of surface effects on silicon carbide polytype stability

Mercier, F. & Nishizawa, S. I., Dec 1 2012, In : Journal of Crystal Growth. 360, 1, p. 189-192 4 p.

Research output: Contribution to journalArticle

24 Citations (Scopus)

Silicon carbide bulk crystal growth modeling from atomic scale to reactor scale

Nishizawa, S. I., Dec 1 2012, Gallium Nitride and Silicon Carbide Power Technologies 2. 3 ed. p. 119-126 8 p. (ECS Transactions; vol. 50, no. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory

Shiramomo, T., Gao, B., Mercier, F., Nishizawa, S., Nakano, S., Kangawa, Y. & Kakimoto, K., Aug 1 2012, In : Journal of Crystal Growth. 352, 1, p. 177-180 4 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)
2013

4.5 kV - 400 A SiC-PiN diode and Si-IEGT hybrid pair module for high switching frequency operation

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Kanai, T., Shinohe, T. & Ohashi, H., Jan 1 2013.

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

Liu, P., Kakushima, K., Iwai, H., Nakajima, A., Makino, T., Ogura, M., Nishizawa, S. & Ohashi, H., 2013, 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. p. 155-158 4 p. 6695585. (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
11 Citations (Scopus)

Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates

Leone, S., Henry, A., Janzén, E. & Nishizawa, S., Jan 1 2013, In : Journal of Crystal Growth. 362, 1, p. 170-173 4 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Experimental evaluation of 10kHz switching operation of 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair module

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T. & Ohashi, H., Dec 31 2013, 2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013. p. 1577-1583 7 p. 6646893. (2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Maximum switching frequency characterization of 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair power module

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T. & Ohashi, H., Dec 31 2013, 2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013. p. 1570-1576 7 p. 6646892. (2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Raman intensity profiles of zone-folded modes in SiC: Identification of stacking sequence of 10H-SiC

Nakashima, S., Tomita, T., Kuwahara, N., Mitani, T., Tomobe, M., Nishizawa, S. & Okumura, H., Nov 21 2013, In : Journal of Applied Physics. 114, 19, 193510.

Research output: Contribution to journalArticle

Temperature-independent two-dimensional hole gas confined at GaN/AlGaN heterointerface

Nakajima, A., Liu, P., Ogura, M., Makino, T., Nishizawa, S. I., Yamasaki, S., Ohashi, H., Kakushima, K. & Iwai, H., Sep 2013, In : Applied Physics Express. 6, 9, 091002.

Research output: Contribution to journalArticle

11 Citations (Scopus)
2014

2.5kV, 200kW bi-directional isolated DC/DC converter for medium-voltage applications

Matsuoka, Y., Wada, K., Nakahara, M., Takao, K., Sung, K., Ohashi, H. & Nishizawa, S., Jan 1 2014, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, p. 744-749 6 p. 6869671

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Erratum: Impact of semiconductor on diamond structure for power supply on chip applications (Japanese Journal of Applied Physics (2014) 53 (04EP16))

Nakagawa, K., Kodama, T., Matsumoto, S., Yamada, T., Hasegawa, M. & Nishizawa, S., Jun 2014, In : Japanese journal of applied physics. 53, 6, 069202.

Research output: Contribution to journalComment/debate

Experimental investigation of normally-on type bidirectional switch for indirect Matrix Converters

Sung, K., Iijima, R., Nishizawa, S., Norigoe, I. & Ohashi, H., Jan 1 2014, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, p. 117-122 6 p. 6869568. (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

Nakajima, A., Liu, P., Ogura, M., Makino, T., Kakushima, K., Nishizawa, S., Ohashi, H., Yamasaki, S. & Iwai, H., Apr 21 2014, In : Journal of Applied Physics. 115, 15, 153707.

Research output: Contribution to journalArticle

19 Citations (Scopus)

Impact of semiconductor on diamond structure for power supply on chip applications

Nakagawa, K., Kodama, T., Matsumoto, S., Yamada, T., Hasegawa, M. & Nishizawa, S., Apr 2014, In : Japanese Journal of Applied Physics. 53, 4 SPEC. ISSUE, 04EP16.

Research output: Contribution to journalArticle

6 Citations (Scopus)

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

Nakajima, A., Nishizawa, S., Ohashi, H., Yonezawa, H., Tsutsui, K., Kakushima, K., Wakabayashi, H. & Iwai, H., Jan 1 2014, Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014. Institute of Electrical and Electronics Engineers Inc., p. 241-244 4 p. 6856021. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory

Shiramomo, T., Gao, B., Mercier, F., Nishizawa, S., Nakano, S. & Kakimoto, K., Jan 1 2014, In : Journal of Crystal Growth. 385, p. 95-99 5 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)
2015

An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Nakajima, A., Nishizawa, S. I., Kubota, S., Kayanuma, R., Tsutsui, K., Ohashi, H., Kakushima, K., Wakabayashi, H. & Iwai, H., Oct 30 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc., 7314489. (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Nakajima, A., Nishizawa, S. I., Ohashi, H., Kayanuma, R., Tsutsui, K., Kubota, S., Kakushima, K., Wakabayashi, H. & Iwai, H., Jun 12 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., p. 357-360 4 p. 7123463. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2015-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

High-speed dicing of SiC wafers by femtosecond pulsed laser

Nakajima, A., Tateishi, Y., Murakami, H., Takahashi, H., Ota, M., Kosugi, R., Mitani, T., Nishizawa, S. I. & Ohashi, H., Jan 1 2015, Silicon Carbide and Related Materials 2014. Chaussende, D. & Ferro, G. (eds.). Trans Tech Publications Ltd, p. 524-527 4 p. (Materials Science Forum; vol. 821-823).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET

Nakajima, A., Saito, W., Nishizawa, S. I. & Ohashi, H., 2015, PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 7149120

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

The silicon on diamond structure by low-temperature bonding technique

Duangchan, S., Uchikawa, Y., Koishikawa, Y., Akiyoshi, B., Nakagawa, K., Matsumoto, S., Hasegawa, M. & Nishizawa, S., Jul 15 2015, 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015. Institute of Electrical and Electronics Engineers Inc., p. 187-192 6 p. 7159590. (Proceedings - Electronic Components and Technology Conference; vol. 2015-July).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)
2016

A new evaluation circuit with a low-voltage inverter intended for capacitors used in a high-power three-phase inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., May 10 2016, 2016 IEEE Applied Power Electronics Conference and Exposition, APEC 2016. Institute of Electrical and Electronics Engineers Inc., p. 3032-3037 6 p. 7468295. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; vol. 2016-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., May 2016, In : IEEE Transactions on Industrial Electronics. 63, 5, p. 2679-2687 9 p., 7362196.

Research output: Contribution to journalArticle

15 Citations (Scopus)

Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections

Hasegawa, K., Kozuma, K., Tsuzaki, K., Omura, I. & Nishizawa, S., Sep 1 2016, In : Microelectronics Reliability. 64, p. 98-100 3 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory

Araki, S., Gao, B., Nishizawa, S., Nakano, S. & Kakimoto, K., May 1 2016, In : Crystal Research and Technology. 51, 5, p. 344-348 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Wafer requirement for future power devices

Nishizawa, S. I., Jan 5 2016, TENCON 2015 - 2015 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 7372890. (IEEE Region 10 Annual International Conference, Proceedings/TENCON; vol. 2016-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2017

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)

Tsutsui, K., Kakushima, K., Hoshii, T., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I. & 2 others, Ohashi, H. & Iwai, H., Jul 1 2017, Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Qin, Y., Hong, Z. & Tang, T-A. (eds.). IEEE Computer Society, p. 1137-1140 4 p. (Proceedings of International Conference on ASIC; vol. 2017-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

An evaluation circuit for DC-link capacitors used in a single- phase PWM inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., Jan 1 2017, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 7990846. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Experimental verification of a 3D scaling principle for low Vce(sat) IGBT

Kakushima, K., Hoshii, T., Tsutsui, K., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I. & 2 others, Ohashi, H. & Iwai, H., Jan 31 2017, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 10.6.1-10.6.4 7838390. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)
2019

3300V Scaled IGBTs Driven by 5V Gate Voltage

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A. & 4 others, Nishizawa, S. I., Omura, I., Ohashi, H. & Hiramoto, T., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 43-46 4 p. 8757626. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
Open Access
2 Citations (Scopus)

Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Hoshii, T., Nakajima, A., Nishizawa, S. I., Ohashi, H., Kakushima, K., Wakabayashi, H. & Tsutsui, K., 2019, In : Japanese journal of applied physics. 58, 6, 061006.

Research output: Contribution to journalArticle

Open Access
1 Citation (Scopus)

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Tsutsui, K., Iwai, H., Ogura, A., Nishizawa, S. & 3 others, Omura, I., Ohashi, H. & Hiramoto, T., Jan 16 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 8.4.1-8.4.4 8614491. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation

Luo, P., Ekkanath Madathil, S. N., Nishizawa, S. I. & Saito, W., Dec 2019, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993596. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Effect of nitrogen and aluminium on silicon carbide polytype stability

Nishizawa, S. & F.Mercier, Jul 15 2019, In : Journal of Crystal Growth. 518, p. 99-102 4 p.

Research output: Contribution to journalArticle