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Author

  • Shinichi Nishizawa
Article
Open Access
2 Citations (Scopus)

Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance

Saito, W. & Nishizawa, S. I., Aug 2020, In : IEEE Transactions on Electron Devices. 67, 8, p. 3285-3290 6 p., 9127192.

Research output: Contribution to journalArticle

Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Hoshii, T., Nakajima, A., Nishizawa, S. I., Ohashi, H., Kakushima, K., Wakabayashi, H. & Tsutsui, K., 2019, In : Japanese journal of applied physics. 58, 6, 061006.

Research output: Contribution to journalArticle

Open Access

Assist Gate MOSFETs for Improvement of On-Resistance and Turn-Off Loss Trade-Off

Saito, W. & Nishizawa, S. I., Jul 2020, In : IEEE Electron Device Letters. 41, 7, p. 1060-1062 3 p., 9085363.

Research output: Contribution to journalArticle

Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs

Takeuchi, K., Fukui, M., Saraya, T., Itou, K., Takakura, T., Suzuki, S., Numasawa, Y., Shigyo, N., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A., Saito, W., Nishizawa, S. I., Tsukuda, M., Omura, I. & 2 others, Ohashi, H. & Hiramoto, T., May 2020, In : IEEE Transactions on Semiconductor Manufacturing. 33, 2, p. 159-165 7 p., 8986674.

Research output: Contribution to journalArticle

11 Citations (Scopus)

CSTBT™ technology for high voltage applications with high dynamic robustness and low overall loss

Nakamura, K., Chen, Z., Nishizawa, S. I. & Furukawa, A., Jul 2020, In : Microelectronics Reliability. 110, 113635.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., May 2016, In : IEEE Transactions on Industrial Electronics. 63, 5, p. 2679-2687 9 p., 7362196.

Research output: Contribution to journalArticle

15 Citations (Scopus)

Effect of nitrogen and aluminium on silicon carbide polytype stability

Nishizawa, S. & F.Mercier, Jul 15 2019, In : Journal of Crystal Growth. 518, p. 99-102 4 p.

Research output: Contribution to journalArticle

Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates

Leone, S., Henry, A., Janzén, E. & Nishizawa, S., Jan 1 2013, In : Journal of Crystal Growth. 362, 1, p. 170-173 4 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices

Luo, P., Madathil, S. N. E., Nishizawa, S. I. & Saito, W., Sep 2020, In : IEEE Transactions on Electron Devices. 67, 9, p. 3691-3697 7 p., 9145633.

Research output: Contribution to journalArticle

Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes

Kobayashi, H., Yokogawa, R., Kinoshita, K., Numasawa, Y., Ogura, A., Nishizawa, S., Saraya, T., Ito, K., Takakura, T., Suzuki, S. I., Fukui, M., Takeuchi, K. & Hiramoto, T., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 59, SBBD07.

Research output: Contribution to journalArticle

Open Access

Freewheeling Diode Technology with Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications

Nakamura, K., Masuoka, F., Nishii, A., Nishizawa, S. I. & Furukawa, A., Nov 2019, In : IEEE Transactions on Electron Devices. 66, 11, p. 4842-4849 8 p., 8852709.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Gas-phase modeling of chlorine-based chemical vapor deposition of silicon carbide

Leone, S., Kordina, O., Henry, A., Nishizawa, S. I., Danielsson, Ö. & Janzén, E., Apr 4 2012, In : Crystal Growth and Design. 12, 4, p. 1977-1984 8 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

Nakajima, A., Liu, P., Ogura, M., Makino, T., Kakushima, K., Nishizawa, S., Ohashi, H., Yamasaki, S. & Iwai, H., Apr 21 2014, In : Journal of Applied Physics. 115, 15, 153707.

Research output: Contribution to journalArticle

19 Citations (Scopus)

Impact of semiconductor on diamond structure for power supply on chip applications

Nakagawa, K., Kodama, T., Matsumoto, S., Yamada, T., Hasegawa, M. & Nishizawa, S., Apr 2014, In : Japanese Journal of Applied Physics. 53, 4 SPEC. ISSUE, 04EP16.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Kakushima, K., Hoshii, T., Tsutsui, K., Iwai, H., Nishizawa, S. I., Omura, I. & Hiramoto, T., Apr 1 2020, In : Japanese journal of applied physics. 59, SG, SGGD18.

Research output: Contribution to journalArticle

In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Miyamura, Y., Harada, H., Liu, X., Nakano, S., Nishizawa, S. & Kakimoto, K., Feb 1 2019, In : Journal of Crystal Growth. 507, p. 154-156 3 p.

Research output: Contribution to journalArticle

N-Buffer Design for Silicon-Based Power Diode Targeting High Dynamic Robustness and High Operating Temperature over 448 K

Nakamura, K., Nishizawa, S. I. & Furukawa, A., Jun 2020, In : IEEE Transactions on Electron Devices. 67, 6, p. 2437-2444 8 p., 9098162.

Research output: Contribution to journalArticle

Numerical investigation of the growth rate enhancement of SiC crystal growth from silicon melts

Mercier, F. & Nishizawa, S. I., Mar 1 2011, In : Japanese journal of applied physics. 50, 3, 035603.

Research output: Contribution to journalArticle

14 Citations (Scopus)

On-Resistance Limit Estimation of 100 V-class Field-Plate Trench Power MOSFETs Optimized Oxide Thickness

Ogawa, T., Saito, W. & Nishizawa, S. I., Jul 2020, In : IEEE Electron Device Letters. 41, 7, p. 1063-1065 3 p., 9109292.

Research output: Contribution to journalArticle

Raman intensity profiles of zone-folded modes in SiC: Identification of stacking sequence of 10H-SiC

Nakashima, S., Tomita, T., Kuwahara, N., Mitani, T., Tomobe, M., Nishizawa, S. & Okumura, H., Nov 21 2013, In : Journal of Applied Physics. 114, 19, 193510.

Research output: Contribution to journalArticle

Role of surface effects on silicon carbide polytype stability

Mercier, F. & Nishizawa, S. I., Dec 1 2012, In : Journal of Crystal Growth. 360, 1, p. 189-192 4 p.

Research output: Contribution to journalArticle

24 Citations (Scopus)

Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics

Mercier, F. & Nishizawa, S. I., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 385-388 4 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory

Shiramomo, T., Gao, B., Mercier, F., Nishizawa, S., Nakano, S. & Kakimoto, K., Jan 1 2014, In : Journal of Crystal Growth. 385, p. 95-99 5 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Surface Buffer IGBT for High Total Performance

Saito, W. & Nishizawa, S. I., Aug 2020, In : IEEE Transactions on Electron Devices. 67, 8, p. 3263-3269 7 p., 9115639.

Research output: Contribution to journalArticle

Temperature-independent two-dimensional hole gas confined at GaN/AlGaN heterointerface

Nakajima, A., Liu, P., Ogura, M., Makino, T., Nishizawa, S. I., Yamasaki, S., Ohashi, H., Kakushima, K. & Iwai, H., Sep 2013, In : Applied Physics Express. 6, 9, 091002.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections

Hasegawa, K., Kozuma, K., Tsuzaki, K., Omura, I. & Nishizawa, S., Sep 1 2016, In : Microelectronics Reliability. 64, p. 98-100 3 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory

Shiramomo, T., Gao, B., Mercier, F., Nishizawa, S., Nakano, S., Kangawa, Y. & Kakimoto, K., Aug 1 2012, In : Journal of Crystal Growth. 352, 1, p. 177-180 4 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Thermodynamic analysis of SiC polytype growth by physical vapor transport method

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S. & Nishizawa, S. I., Jun 1 2011, In : Journal of Crystal Growth. 324, 1, p. 78-81 4 p.

Research output: Contribution to journalArticle

18 Citations (Scopus)

Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory

Araki, S., Gao, B., Nishizawa, S., Nakano, S. & Kakimoto, K., May 1 2016, In : Crystal Research and Technology. 51, 5, p. 344-348 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125405.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125404.

Research output: Contribution to journalArticle

1 Citation (Scopus)
Comment/debate

Erratum: Impact of semiconductor on diamond structure for power supply on chip applications (Japanese Journal of Applied Physics (2014) 53 (04EP16))

Nakagawa, K., Kodama, T., Matsumoto, S., Yamada, T., Hasegawa, M. & Nishizawa, S., Jun 2014, In : Japanese journal of applied physics. 53, 6, 069202.

Research output: Contribution to journalComment/debate

Conference contribution

2.5kV, 200kW bi-directional isolated DC/DC converter for medium-voltage applications

Matsuoka, Y., Wada, K., Nakahara, M., Takao, K., Sung, K., Ohashi, H. & Nishizawa, S., Jan 1 2014, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, p. 744-749 6 p. 6869671

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

3300V Scaled IGBTs Driven by 5V Gate Voltage

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A. & 4 others, Nishizawa, S. I., Omura, I., Ohashi, H. & Hiramoto, T., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 43-46 4 p. 8757626. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)

Tsutsui, K., Kakushima, K., Hoshii, T., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I. & 2 others, Ohashi, H. & Iwai, H., Jul 1 2017, Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Qin, Y., Hong, Z. & Tang, T-A. (eds.). IEEE Computer Society, p. 1137-1140 4 p. (Proceedings of International Conference on ASIC; vol. 2017-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T. & Ohashi, H., Dec 17 2012, 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012. p. 1509-1514 6 p. 6342635. (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Analysis of growth velocity of SiC growth by the physical vapor transport method

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S. & Nishizawa, S. I., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 25-28 4 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

An evaluation circuit for DC-link capacitors used in a single- phase PWM inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., Jan 1 2017, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 7990846. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

A new evaluation circuit with a low-voltage inverter intended for capacitors used in a high-power three-phase inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., May 10 2016, 2016 IEEE Applied Power Electronics Conference and Exposition, APEC 2016. Institute of Electrical and Electronics Engineers Inc., p. 3032-3037 6 p. 7468295. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; vol. 2016-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Nakajima, A., Nishizawa, S. I., Kubota, S., Kayanuma, R., Tsutsui, K., Ohashi, H., Kakushima, K., Wakabayashi, H. & Iwai, H., Oct 30 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc., 7314489. (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Bulk and surface effects on the polytype stability in SiC crystals

Mercier, F. & Nishizawa, S., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 41-44 4 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

Liu, P., Kakushima, K., Iwai, H., Nakajima, A., Makino, T., Ogura, M., Nishizawa, S. & Ohashi, H., 2013, 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. p. 155-158 4 p. 6695585. (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Tsutsui, K., Iwai, H., Ogura, A., Nishizawa, S. & 3 others, Omura, I., Ohashi, H. & Hiramoto, T., Jan 16 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 8.4.1-8.4.4 8614491. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Design and analysis of a bus bar structure for a medium voltage inverter

Ando, M., Wada, K., Takao, K., Kanai, T., Nishizawa, S. & Ohashi, H., Oct 11 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011. 6020404. (Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Design and implementation of a non-destructive test circuit for SiC-MOSFETs

Wada, K., Nishizawa, S. & Ohashi, H., 2012, Conference Proceedings - 2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012. Vol. 1. p. 10-15 6 p. 6258831

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Diamond power devices - Possbility of high voltage applicatios

Yamasaki, S., Matsumoto, T., Oyama, K., Kato, H., Ogura, M., Takeuchi, D., Makino, T., Nishizawa, S., Oohash, H. & Okushi, H., 2011, 2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Proceedings. p. 418-420 3 p. 6123021. (2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization

Sato, R., Kakimoto, K., Saito, W. & Nishizawa, S. I., Sep 2020, Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020. Institute of Electrical and Electronics Engineers Inc., p. 494-497 4 p. 9170035. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2020-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution