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  • Taizoh Sadoh
2014

Low temperature (~300°C) epitaxial growth of SiGe by liquid-solid coexisting annealing of A-GeSn/Si(100) structure

Chikita, H., Matsumura, R., Sadoh, T. & Miyao, M., Jan 16 2014, Quantum, Nano, Micro Technologies and Applied Researches. p. 137-140 4 p. (Applied Mechanics and Materials; vol. 481).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Self-organized travelling-zone-melting growth of a-Ge/Sn/c-Ge stacked-structures for high-quality GeSn

Matsumura, R., Kinoshita, Y., Tojo, Y., Sadoh, T., Nishimura, T. & Miyao, M., 2014, In : ECS Journal of Solid State Science and Technology. 3, 10, p. P340-P343

Research output: Contribution to journalArticle

1 Citation (Scopus)

Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator

Ooato, A., Suzuki, T., Park, J. H., Miyao, M. & Sadoh, T., Apr 30 2014, In : Thin Solid Films. 557, p. 155-158 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

The effects of annealing temperatures on composition and strain in SixGe1-x obtained by melting growth of electrodeposited Ge on Si (100)

Abidin, M. S. Z., Morshed, T., Chikita, H., Kinoshita, Y., Muta, S., Anisuzzaman, M., Park, J. H., Matsumura, R., Mahmood, M. R., Sadoh, T. & Hashim, A. M., Mar 6 2014, In : Materials. 7, 2, p. 1409-1421 13 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding

Chikita, H., Matsumura, R., Kai, Y., Sadoh, T. & Miyao, M., Nov 17 2014, In : Applied Physics Letters. 105, 20, 202112.

Research output: Contribution to journalArticle

25 Citations (Scopus)

Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics

Sadoh, T., Park, J. H., Kurosawa, M. & Miyao, M., Jan 1 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 47-48 2 p. 6874633. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2013

Atomically-coherent-coalescence of two growth-fronts in Ge stripes on insulator by rapid-melting lateral-crystallization

Kurosawa, M., Toko, K., Sadoh, T., Mizushim, I. & Miyao, M., Nov 18 2013, In : ECS Journal of Solid State Science and Technology. 2, 3

Research output: Contribution to journalArticle

4 Citations (Scopus)

Crystallization of electrodeposited germanium thin film on silicon (100)

Abidin, M. S. Z., Matsumura, R., Anisuzzaman, M., Park, J. H., Muta, S., Mahmood, M. R., Sadoh, T. & Hashim, A. M., Dec 5 2013, In : Materials. 6, 11, p. 5047-5057 11 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique

Mizushima, I., Sadoh, T. & Miyao, M., 2013, Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013. IEEE Computer Society, p. 30-31 2 p. 6644498

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth

Tojo, Y., Matsumura, R., Yokoyama, H., Kurosawa, M., Toko, K., Sadoh, T. & Miyao, M., Mar 4 2013, In : Applied Physics Letters. 102, 9, 092102.

Research output: Contribution to journalArticle

15 Citations (Scopus)

High-quality hybrid-GeSn/Ge stacked-structures by low-temperature Sn induced-melting growth

Kinoshita, Y., Matsumura, R., Sadoh, T., Nishimura, T. & Miyao, M., Jan 1 2013, In : ECS Transactions. 58, 9, p. 179-184 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Laterally-graded doping into ge-on-insulator by combination of ion-implantation and rapid-melting growth

Matsumura, R., Anisuzzaman, M., Yokoyama, H., Sadoh, T. & Miyao, M., Jul 26 2013, In : ECS Solid State Letters. 2, 7

Research output: Contribution to journalArticle

4 Citations (Scopus)

Liquid-solid coexisting annealing of a-GeSn/Si(100) structure for low temperature epitaxial growth of SiGe

Chikita, H., Matsumura, R., Sadoh, T. & Miyao, M., Jan 1 2013, In : ECS Transactions. 58, 9, p. 257-262 6 p.

Research output: Contribution to journalArticle

Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation

Heya, A., Kanda, K., Toko, K., Sadoh, T., Amano, S., Matsuo, N., Miyamoto, S., Miyao, M. & Mochizuki, T., May 1 2013, In : Thin Solid Films. 534, p. 334-340 7 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Low-temperature metal-induced crystallization of orientation-controlled SiGe on insulator for flexible electronics

Sadoh, T., Park, J. H., Kurosawa, M. & Miyao, M., Jan 1 2013, In : ECS Transactions. 58, 9, p. 213-221 9 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (∼250 °c)

Park, J. H., Suzuki, T., Kurosawa, M., Miyao, M. & Sadoh, T., Aug 19 2013, In : Applied Physics Letters. 103, 8, 082102.

Research output: Contribution to journalArticle

57 Citations (Scopus)

Orientation-control of ge-stripes-on-insulator by narrowing in rapid-melting growth from SI(111) seed

Anisuzzaman, M., Muta, S., Takahashi, M., Hashim, A. M. & Sadoh, T., Jul 26 2013, In : ECS Solid State Letters. 2, 9, p. P76-P78

Research output: Contribution to journalArticle

1 Citation (Scopus)
2012

(111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion

Park, J. H., Suzuki, T., Kurosawa, M., Miyao, M. & Sadoh, T., Oct 31 2012, Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. p. 231-234 4 p. 6294891

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation

Kino, S., Heya, A., Nonomura, Y., Matsuo, N., Kanda, K., Miyamoto, S., Amano, S., Mochizuki, T., Toko, K., Sadoh, T. & Miyao, M., Oct 31 2012, Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. p. 223-226 4 p. 6294889. (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing

Kino, S., Nonomura, Y., Heya, A., Matsuo, N., Kanda, K., Miyamoto, S., Amano, S., Mochizuki, T., Toko, K., Sadoh, T. & Miyao, M., Jul 30 2012, IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai. p. 98-99 2 p. 6218600. (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Effects of dose on activation characteristics of P in Ge

Anisuzzaman, M. & Sadoh, T., Feb 1 2012, In : Thin Solid Films. 520, 8, p. 3255-3258 4 p.

Research output: Contribution to journalArticle

Enhanced interfacial-nucleation in al-induced crystallization for (111) Oriented Si1-xGex (0 ≤ x ≤ 1) films on insulating substrates

Kurosawa, M., Kawabata, N., Sadoh, T. & Miyao, M., Dec 1 2012, In : ECS Journal of Solid State Science and Technology. 1, 3, p. P144-P147

Research output: Contribution to journalArticle

48 Citations (Scopus)

Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures

Sadoh, T., Kurosawa, M., Heya, A., Matsuo, N. & Miyao, M., Feb 1 2012, In : Thin Solid Films. 520, 8, p. 3276-3278 3 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Epitaxial-template structure utilizing Ge-on-insulator stripe arrays with nanospacing for advanced heterogeneous integration on Si platform

Hashim, A. M., Anisuzzaman, M., Muta, S., Sadoh, T. & Miyao, M., Jun 1 2012, In : Japanese journal of applied physics. 51, 6 PART 2, 06FF04.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Formation of graded SiGe on insulator by segregation-controlled rapid-melting-growth

Matsumura, R., Tojo, Y., Yokoyama, H., Kurosawa, M., Sadoh, T. & Miyao, M., Dec 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 747-751 5 p. (ECS Transactions; vol. 50, no. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Formation of large grain SiGe on insulator by Si segregation in seedless-rapid-melting process

Kato, R., Kurosawa, M., Matsumura, R., Tojo, Y., Sadoh, T. & Miyao, M., Dec 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 431-436 6 p. (ECS Transactions; vol. 50, no. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Formation of nanostructured germanium-on-insulator for integration of multi-functional materials on a panel

Anisuzzaman, M., Muta, S., Hashim, A. M., Miyao, M. & Sadoh, T., Oct 31 2012, Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. p. 235-238 4 p. 6294892. (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth

Matsumura, R., Tojo, Y., Kurosawa, M., Sadoh, T., Mizushima, I. & Miyao, M., Dec 10 2012, In : Applied Physics Letters. 101, 24, 241904.

Research output: Contribution to journalArticle

26 Citations (Scopus)

Hybrid-formation of Ge-on-insulator structures on Si platform by SiGe-mixing-triggered rapid-melting growth - A road to artificial crystal

Miyao, M., Kurosawa, M., Toko, K., Tojo, Y. & Sadoh, T., Dec 1 2012, High Purity Silicon 12. 5 ed. Vol. 50. p. 59-70 12 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth

Kurosawa, M., Kawabata, N., Sadoh, T. & Miyao, M., Apr 23 2012, In : Applied Physics Letters. 100, 17, 172107.

Research output: Contribution to journalArticle

28 Citations (Scopus)

Low temperature (∼250°C) layer exchange crystallization of Si 1 - XGe x (x = 1-0) on insulator for advanced flexible devices

Park, J. H., Kurosawa, M., Kawabata, N., Miyao, M. & Sadoh, T., Feb 1 2012, In : Thin Solid Films. 520, 8, p. 3293-3295 3 p.

Research output: Contribution to journalArticle

26 Citations (Scopus)

Nano-lithography free formation of high density Ge-on-insulator network for epitaxial template

Yokoyama, H., Toko, K., Sadoh, T. & Miyao, M., Feb 27 2012, In : Applied Physics Letters. 100, 9, 092111.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Self organization of FeGe/FeSi/FeGe layered structures on Ge and their electrical conduction properties

Matsukura, B., Hiraiwa, Y., Nakajima, T., Narumi, K., Sakai, S., Sadoh, T., Miyao, M. & Maeda, Y., Jan 1 2012, In : Physics Procedia. 23, p. 21-24 4 p.

Research output: Contribution to journalConference article

2 Citations (Scopus)

S iG e ミキシング誘起溶融成長によるG OI(G e on Ins ulator)の形成: 人工単結晶への道

Translated title of the contribution: SiGe-mixing-triggered rapid-melting growth for Ge-on-insulator formation: A road to artificial crystalMiyao, M., Sadoh, T., Toko, K. & Kurosawa, M., May 2012, In : OYOBUTURI. 81, p. 410 5 p., 5.

Research output: Contribution to journalReview article

Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth

Kurosawa, M., Tojo, Y., Matsumura, R., Sadoh, T. & Miyao, M., Aug 27 2012, In : Applied Physics Letters. 101, 9, 091905.

Research output: Contribution to journalArticle

33 Citations (Scopus)
2011

Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth

Kurosawa, M., Toko, K., Kawabata, N., Sadoh, T. & Miyao, M., Jun 1 2011, In : Solid-State Electronics. 60, 1, p. 7-12 6 p.

Research output: Contribution to journalArticle

25 Citations (Scopus)

Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation

Kino, S., Nonomura, Y., Heya, A., Matsuo, N., Kanda, K., Miyamoto, S., Amano, S., Mochizuki, T., Toko, K., Sadoh, T. & Miyao, M., 2011, Society for Information Display - 18th International Display Workshops 2011, IDW'11. Vol. 1. p. 659-662 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Au-catalyst induced low temperature (∼250 °C) layer exchange crystallization for SiGe on insulator

Park, J. H., Kurosawa, M., Kawabata, N., Miyao, M. & Sadoh, T., Aug 2 2011, Advanced Semiconductor-on-Insulator Technology and Related Physics 15. 5 ed. p. 39-42 4 p. (ECS Transactions; vol. 35, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Au-induced low-temperature (∼250°C) crystallization of Si on insulator through layer-exchange process

Park, J. H., Kurosawa, M., Kawabata, N., Miyao, M. & Sadoh, T., 2011, In : Electrochemical and Solid-State Letters. 14, 6

Research output: Contribution to journalArticle

25 Citations (Scopus)

Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth

Toko, K., Ohta, Y., Tanaka, T., Sadoh, T. & Miyao, M., Jul 18 2011, In : Applied Physics Letters. 99, 3, 032103.

Research output: Contribution to journalArticle

48 Citations (Scopus)

Dehydrogenation-enhanced large strain (∼1.6%) in Si pillars covered by Si3N4 stress liners

Kurosawa, M., Sadoh, T. & Miyao, M., 2011, In : Electrochemical and Solid-State Letters. 14, 4

Research output: Contribution to journalArticle

2 Citations (Scopus)

Growth-direction-dependent characteristics of Ge-on-insulator by Si-Ge mixing triggered melting growth

Ohta, Y., Tanaka, T., Toko, K., Sadoh, T. & Miyao, M., Jun 1 2011, In : Solid-State Electronics. 60, 1, p. 18-21 4 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Growth-direction dependent rapid-melting-growth of Ge-on-Insulator (GOI) and its application to Ge mesh-growth

Yokoyama, H., Ohta, Y., Toko, K., Sadoh, T. & Miyao, M., Aug 2 2011, Advanced Semiconductor-on-Insulator Technology and Related Physics 15. 5 ed. p. 55-60 6 p. (ECS Transactions; vol. 35, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111)

Maeda, Y., Narumi, K., Sakai, S., Terai, Y., Hamaya, K., Sadoh, T. & Miyao, M., Oct 3 2011, In : Thin Solid Films. 519, 24, p. 8461-8467 7 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization

Kurosawa, M., Kawabata, N., Kato, R., Sadoh, T. & Miyao, M., Aug 2 2011, Advanced Semiconductor-on-Insulator Technology and Related Physics 15. 5 ed. p. 51-54 4 p. (ECS Transactions; vol. 35, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator

Sadoh, T., Kurosawa, M., Hagihara, T., Toko, K. & Miyao, M., Jun 29 2011, In : Electrochemical and Solid-State Letters. 14, 7

Research output: Contribution to journalArticle

26 Citations (Scopus)

Magnetooptical properties of iron based Heusler alloy epitaxial films on Ge(111)

Maeda, Y., Ikeda, T., Ichikawa, T., Nakajima, T., Matsukura, B., Sadoh, T. & Miyao, M., Jan 1 2011, In : Physics Procedia. 11, p. 200-203 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100), (110), and (111) Ge networks on insulators

Mizushima, I., Toko, K., Ohta, Y., Sakane, T., Sadoh, T. & Miyao, M., May 2 2011, In : Applied Physics Letters. 98, 18, 182107.

Research output: Contribution to journalArticle

22 Citations (Scopus)