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3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., May 1 2018, In : Crystal Research and Technology. 53, 5, 1700246.

Research output: Contribution to journalArticle

Silicon
Crystallization
Crystal growth
floating
crystal growth

3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., Feb 1 2018, In : Journal of Crystal Growth. 483, p. 269-274 6 p.

Research output: Contribution to journalArticle

Silicon
Crystallization
Crystal growth
floating
crystal growth
Chemical beam epitaxy
surface stability
epitaxy
Organic chemicals
pressure dependence
2 Citations (Scopus)

Ab initio study of GaAs(100) surface stability over As2, H2 and N2 as a model for vapor-phase epitaxy of GaAs1-xNx

Valencia, H., Kangawa, Y. & Kakimoto, K., Dec 15 2015, In : Journal of Crystal Growth. 432, p. 6-14 9 p., 22983.

Research output: Contribution to journalArticle

surface stability
Vapor phase epitaxy
vapor phase epitaxy
Gases
Chemical potential
8 Citations (Scopus)

Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy

Kusaba, A., Kangawa, Y., Kempisty, P., Shiraishi, K., Kakimoto, K. & Koukitu, A., Dec 1 2016, In : Applied Physics Express. 9, 12, 125601.

Research output: Contribution to journalArticle

Metallorganic vapor phase epitaxy
Surface reconstruction
Epitaxial growth
vapor phase epitaxy
Crystal orientation
8 Citations (Scopus)

Advantage in solar cell efficiency of high-quality seed cast mono Si ingot

Miyamura, Y., Harada, H., Jiptner, K., Nakano, S., Gao, B., Kakimoto, K., Nakamura, K., Ohshita, Y., Ogura, A., Sugawara, S. & Sekiguchi, T., Jun 1 2015, In : Applied Physics Express. 8, 6, 062301.

Research output: Contribution to journalArticle

Monocrystalline silicon
ingots
Ingots
Seed
casts
5 Citations (Scopus)

Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon

Gao, B., Jiptner, K., Nakano, S., Harada, H., Miyamura, Y., Sekiguchi, T. & Kakimoto, K., Feb 1 2015, In : Journal of Crystal Growth. 411, p. 49-55 7 p.

Research output: Contribution to journalArticle

Silicon
Dislocations (crystals)
Single crystals
Crystals
single crystals
Monomethylhydrazine
monomethylhydrazines
Chemical beam epitaxy
dimethylhydrazines
Dimethylhydrazines

Control of extended defects in cast and seed cast Si ingots for photovoltaic application

Sekiguchi, T., Jiptner, K., Prakash, R. R., Chen, J., Miyamura, Y., Harada, H., Nakano, S., Gao, B. & Kakimoto, K., Aug 1 2015, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 12, 8, p. 1094-1098 5 p.

Research output: Contribution to journalArticle

ingots
casts
seeds
defects
silicon
1 Citation (Scopus)

Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation

Ishikawa, Y., Tajima, M., Kiuchi, H., Ogura, A., Miyamura, Y., Harada, H. & Kakimoto, K., Aug 1 2018, In : Japanese Journal of Applied Physics. 57, 8, 08RB06.

Research output: Contribution to journalArticle

Electron irradiation
electron irradiation
Photoluminescence
photoluminescence
Crystals
3 Citations (Scopus)

Development of carbon transport and modeling in Czochralski silicon crystal growth

Liu, X., Nakano, S. & Kakimoto, K., Jan 1 2017, In : Crystal Research and Technology. 52, 1, 1600221.

Research output: Contribution to journalArticle

Argon
Silicon
Crystallization
Crystal growth
crystal growth
8 Citations (Scopus)

DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1 ) metalorganic vapor phase epitaxy

Kempisty, P., Kangawa, Y., Kusaba, A., Shiraishi, K., Krukowski, S., Bockowski, M., Kakimoto, K. & Amano, H., Oct 2 2017, In : Applied Physics Letters. 111, 14, 141602.

Research output: Contribution to journalArticle

vapor phase epitaxy
density functional theory
carbon
impurities
diluents
5 Citations (Scopus)

Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation

Jiptner, K., Miyamura, Y., Harada, H., Gao, B., Kakimoto, K. & Sekiguchi, T., Dec 1 2016, In : Progress in Photovoltaics: Research and Applications. 24, 12, p. 1513-1522 10 p.

Research output: Contribution to journalArticle

ingots
Ingots
Thermal stress
Seed
casts

Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?

Miyamura, Y., Harada, H., Nakano, S., Nishizawa, S. & Kakimoto, K., May 1 2018, In : Journal of Crystal Growth. 489, p. 1-4 4 p.

Research output: Contribution to journalArticle

Silicon
life (durability)
Crystals
silicon
crystals
2 Citations (Scopus)

Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth

Liu, X., Han, X. F., Nakano, S. & Kakimoto, K., Feb 1 2018, In : Journal of Crystal Growth. 483, p. 241-244 4 p.

Research output: Contribution to journalArticle

Crucibles
Silicon
crucibles
Crystallization
Crystal growth
1 Citation (Scopus)

Effect of oxygen on dislocation multiplication in silicon crystals

Fukushima, W., Harada, H., Miyamura, Y., Imai, M., Nakano, S. & Kakimoto, K., Mar 15 2018, In : Journal of Crystal Growth. 486, p. 45-49 5 p.

Research output: Contribution to journalArticle

Silicon
Dislocations (crystals)
multiplication
Oxygen
Crystals
6 Citations (Scopus)

Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth

Liu, X., Nakano, S. & Kakimoto, K., Jun 15 2017, In : Journal of Crystal Growth. 468, p. 595-600 6 p.

Research output: Contribution to journalArticle

Silicon
Crystallization
Crystal growth
crystal growth
Melting
4 Citations (Scopus)

First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN

Sekiguchi, K., Shirakawa, H., Yamamoto, Y., Araidai, M., Kangawa, Y., Kakimoto, K. & Shiraishi, K., Jun 15 2017, In : Journal of Crystal Growth. 468, p. 950-953 4 p.

Research output: Contribution to journalArticle

Vapor phase epitaxy
vapor phase epitaxy
Gases
Metals
Thermodynamics

First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth

Kawamura, T., Kitamoto, A., Imade, M., Yoshimura, M., Mori, Y., Morikawa, Y., Kangawa, Y., Kakimoto, K. & Akiyama, T., Nov 1 2018, In : Japanese Journal of Applied Physics. 57, 11, 115504.

Research output: Contribution to journalArticle

Vapor phase epitaxy
vapor phase epitaxy
Oxides
oxides
Desorption
1 Citation (Scopus)

First-principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions

Kawamura, T., Kitamoto, A., Imade, M., Yoshimura, M., Mori, Y., Morikawa, Y., Kangawa, Y. & Kakimoto, K., Aug 1 2017, In : Physica Status Solidi (B) Basic Research. 254, 8, 1600706.

Research output: Contribution to journalArticle

Vapor phase epitaxy
vapor phase epitaxy
Oxides
Phase diagrams
phase diagrams
5 Citations (Scopus)

Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method

Nagaoka, A., Katsube, R., Nakatsuka, S., Yoshino, K., Taniyama, T., Miyake, H., Kakimoto, K., Scarpulla, M. A. & Nose, Y., Aug 1 2015, In : Journal of Crystal Growth. 423, p. 9-15 7 p., 22818.

Research output: Contribution to journalArticle

heaters
Single crystals
Growth temperature
single crystals
Electron probe microanalysis

Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy

Inatomi, Y., Kangawa, Y., Kakimoto, K. & Koukitu, A., Mar 1 2017, In : Japanese Journal of Applied Physics. 56, 3, 038002.

Research output: Contribution to journalArticle

Semiconductor growth
Vapor phase epitaxy
vapor phase epitaxy
Thermodynamics
thermodynamics

In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Miyamura, Y., Harada, H., Liu, X., Nakano, S., Nishizawa, S. & Kakimoto, K., Feb 1 2019, In : Journal of Crystal Growth. 507, p. 154-156 3 p.

Research output: Contribution to journalArticle

Silicon
Carbon Monoxide
in situ measurement
furnaces
contamination
2 Citations (Scopus)

Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals

Gao, B. & Kakimoto, K., Jan 21 2015, In : Journal of Applied Physics. 117, 3, 035701.

Research output: Contribution to journalArticle

multiplication
slip
single crystals
plastic deformation
crystal growth
5 Citations (Scopus)
Ammonia
Entropy
Thermodynamics
Adsorption
Metallorganic vapor phase epitaxy
2 Citations (Scopus)

Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. & Kakimoto, K., Oct 1 2018, In : Journal of Crystal Growth. 499, p. 8-12 5 p.

Research output: Contribution to journalArticle

Silicon
Carbon Monoxide
Crystallization
Crystal growth
crystal growth
2 Citations (Scopus)

Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process

Nakano, S., Gao, B. & Kakimoto, K., Jun 15 2017, In : Journal of Crystal Growth. 468, p. 839-844 6 p.

Research output: Contribution to journalArticle

Dislocations (crystals)
Thermal stress
residual stress
numerical analysis
Numerical analysis
5 Citations (Scopus)

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

Liu, X., Gao, B., Nakano, S. & Kakimoto, K., Jan 1 2015, In : Crystal Research and Technology. 50, 6, p. 458-463 6 p.

Research output: Contribution to journalArticle

Silicon
Crystallization
Crystal growth
Silicon carbide
silicon carbides
12 Citations (Scopus)

Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth

Liu, X., Gao, B. & Kakimoto, K., May 1 2015, In : Journal of Crystal Growth. 417, p. 58-64 7 p., 22364.

Research output: Contribution to journalArticle

Silicon
Crystallization
Crystal growth
crystal growth
contamination
8 Citations (Scopus)

On the phase transformation of single-crystal 4H-SiC during nanoindentation

Matsumoto, M., Huang, H., Harada, H., Kakimoto, K. & Yan, J., Jun 12 2017, In : Journal of Physics D: Applied Physics. 50, 26, 265303.

Research output: Contribution to journalArticle

Nanoindentation
nanoindentation
Silicon carbide
silicon carbides
phase transformations
2 Citations (Scopus)

Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN

Kangawa, Y., Kusaba, A., Sumiyoshi, H., Miyake, H., Boćkowski, M. & Kakimoto, K., Jun 1 2015, In : Applied Physics Express. 8, 6, 065601.

Research output: Contribution to journalArticle

liquid-solid interfaces
Real time systems
Liquids
templates
Polycrystals
4 Citations (Scopus)

Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth

Liu, X., Gao, B., Nakano, S. & Kakimoto, K., Sep 15 2017, In : Journal of Crystal Growth. 474, p. 3-7 5 p.

Research output: Contribution to journalArticle

Silicon
Crystallization
Crystal growth
crystal growth
contamination
3 Citations (Scopus)

Relationship between carbon concentration and carrier lifetime in CZ-Si crystals

Miyamura, Y., Harada, H., Nakano, S., Nishizawa, S. & Kakimoto, K., Mar 15 2018, In : Journal of Crystal Growth. 486, p. 56-59 4 p.

Research output: Contribution to journalArticle

Carrier lifetime
carrier lifetime
Silicon
Carbon
life (durability)
1 Citation (Scopus)

Relationship between dislocation density and oxygen concentration in silicon crystals during directional solidification

Ide, T., Harada, H., Miyamura, Y., Imai, M., Nakano, S. & Kakimoto, K., Jun 7 2018, In : Crystals. 8, 6, 244.

Research output: Contribution to journalArticle

Silicon
Dislocations (crystals)
Solidification
Oxygen
Crystals
1 Citation (Scopus)

Single-Seed Casting Large-Size Monocrystalline Silicon for High-Efficiency and Low-Cost Solar Cells

Gao, B., Nakano, S., Harada, H., Miyamura, Y., Sekiguchi, T. & Kakimoto, K., Sep 1 2015, In : Engineering. 1, 3, p. 378-383 6 p.

Research output: Contribution to journalArticle

Monocrystalline silicon
Seed
Solar cells
Casting
Numerical analysis
2 Citations (Scopus)

Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics

Kawamura, T., Mizutani, M., Suzuki, Y., Kangawa, Y. & Kakimoto, K., Mar 1 2016, In : Japanese Journal of Applied Physics. 55, 3, 031301.

Research output: Contribution to journalArticle

Screw dislocations
screw dislocations
Strain energy
Dislocations (crystals)
Molecular dynamics

Structural and optical properties of AlN grown by solid source solution growth method

Kangawa, Y., Suetsugu, H., Knetzger, M., Meissner, E., Hazu, K., Chichibu, S. F., Kajiwara, T., Tanaka, S., Iwasaki, Y. & Kakimoto, K., Aug 1 2015, In : Japanese Journal of Applied Physics. 54, 8, 085501.

Research output: Contribution to journalArticle

Structural properties
Optical properties
optical properties
Cathodoluminescence
cathodoluminescence
2 Citations (Scopus)

Study on the usage of a commercial software (Comsol-Multiphysics®) for dislocation multiplication model

Gallien, B., Albaric, M., Duffar, T., Kakimoto, K. & M'Hamdi, M., Jan 1 2017, In : Journal of Crystal Growth. 457, p. 60-64 5 p.

Research output: Contribution to journalArticle

ingots
Ingots
multiplication
computer programs
Silicon
3 Citations (Scopus)

Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy

Kusaba, A., Kangawa, Y., Honda, Y., Amano, H. & Kakimoto, K., May 1 2016, In : Japanese Journal of Applied Physics. 55, 5, 05FM01.

Research output: Contribution to journalArticle

Metallorganic vapor phase epitaxy
Surface reconstruction
vapor phase epitaxy
Growth temperature
Monolayers
4 Citations (Scopus)

Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth

Inatomi, Y., Kangawa, Y., Ito, T., Suski, T., Kumagai, Y., Kakimoto, K. & Koukitu, A., Jul 1 2017, In : Japanese Journal of Applied Physics. 56, 7, 078003.

Research output: Contribution to journalArticle

Composition effects
Metallorganic vapor phase epitaxy
pulling
vapor phase epitaxy
Tensile strain
10 Citations (Scopus)

Thermodynamic analysis of (0001) and (0001) GaN metalorganic vapor phase epitaxy

Kusaba, A., Kangawa, Y., Kempisty, P., Valencia, H., Shiraishi, K., Kumagai, Y., Kakimoto, K. & Koukitu, A., Jul 1 2017, In : Japanese Journal of Applied Physics. 56, 7, 070304.

Research output: Contribution to journalArticle

Metallorganic vapor phase epitaxy
vapor phase epitaxy
Thermodynamics
thermodynamics
Surface states
7 Citations (Scopus)

Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

Sekiguchi, K., Shirakawa, H., Chokawa, K., Araidai, M., Kangawa, Y., Kakimoto, K. & Shiraishi, K., Apr 1 2018, In : Japanese Journal of Applied Physics. 57, 4, 04FJ03.

Research output: Contribution to journalArticle

Vapor phase epitaxy
vapor phase epitaxy
Thermodynamics
Decomposition
decomposition
6 Citations (Scopus)

Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy

Sekiguchi, K., Shirakawa, H., Chokawa, K., Araidai, M., Kangawa, Y., Kakimoto, K. & Shiraishi, K., Apr 1 2017, In : Japanese Journal of Applied Physics. 56, 4, 04CJ04.

Research output: Contribution to journalArticle

metal nitrides
Vapor phase epitaxy
vapor phase epitaxy
Nitrides
adducts
2 Citations (Scopus)

Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

Gao, B., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., Sep 15 2017, In : Journal of Crystal Growth. 474, p. 121-129 9 p.

Research output: Contribution to journalArticle

dimensional analysis
Silicon
multiplication
Crystal orientation
Dislocations (crystals)

Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field

Yokoyama, R., Nakamura, T., Sugimura, W., Ono, T., Fujiwara, T. & Kakimoto, K., Aug 1 2019, In : Journal of Crystal Growth. 519, p. 77-83 7 p.

Research output: Contribution to journalArticle

Open Access
Crystal growth from melt
Silicon
Magnetic fields
Computer simulation
silicon
1 Citation (Scopus)

Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory

Araki, S., Gao, B., Nishizawa, S., Nakano, S. & Kakimoto, K., May 1 2016, In : Crystal Research and Technology. 51, 5, p. 344-348 5 p.

Research output: Contribution to journalArticle

Nucleation
nucleation
Supersaturation
supersaturation
furnaces
Chapter
1 Citation (Scopus)

Fluid Dynamics: Modeling and Analysis

Kakimoto, K. & Gao, B., Jan 1 2015, Handbook of Crystal Growth: Bulk Crystal Growth: Second Edition. Elsevier Inc., Vol. 2. p. 845-870 26 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

fluid dynamics
crystal growth
impurities
forced convection
free convection
Conference contribution
2 Citations (Scopus)

50 cm size seed cast Si ingot growth and its characterization

Sekiguchi, T., Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., Nakano, S., Gao, B. & Kakimoto, K., Jan 1 2016, Gettering and Defect Engineering in Semiconductor Technology XVI. Pichler, P. & Pichler, P. (eds.). Trans Tech Publications Ltd, p. 30-34 5 p. (Solid State Phenomena; vol. 242).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

ingots
Ingots
Seed
casts
seeds
1 Citation (Scopus)

First principles and themodynamical studies on matel organic vaper phase epitaxy of GaN

Shiraishi, K., Sekiguchi, K., Shirakawa, H., Chokawa, K., Araidai, M., Kangawa, Y. & Kakimoto, K., Jan 1 2017, ECS Transactions. Misra, D., De Gendt, S., Housa, M., Kita, K. & Landheer, D. (eds.). 1 ed. Electrochemical Society Inc., p. 295-301 7 p. (ECS Transactions; vol. 80, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
Metallorganic vapor phase epitaxy
Gases
Vapor phase epitaxy
Nitrides

Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells

Gao, B. & Kakimoto, K., Jan 1 2015, Defects and Impurities in Silicon Materials - An Introduction to Atomic-Level Silicon Engineering. Yoshida, Y. & Langouche, G. (eds.). Springer Verlag, p. 241-272 32 p. (Lecture Notes in Physics; vol. 916).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

numerical analysis
crystal growth
solar cells
impurities
silicon