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  • Koichi Kakimoto
2020

3d numerical analysis of the asymmetric three-phase line of floating zone for silicon crystal growth

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., Feb 2020, In : Crystals. 10, 2, 121.

Research output: Contribution to journalArticle

Open Access

3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125403.

Research output: Contribution to journalArticle

Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125405.

Research output: Contribution to journalArticle

Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125404.

Research output: Contribution to journalArticle

2019

In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Miyamura, Y., Harada, H., Liu, X., Nakano, S., Nishizawa, S. & Kakimoto, K., Feb 1 2019, In : Journal of Crystal Growth. 507, p. 154-156 3 p.

Research output: Contribution to journalArticle

Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field

Yokoyama, R., Nakamura, T., Sugimura, W., Ono, T., Fujiwara, T. & Kakimoto, K., Aug 1 2019, In : Journal of Crystal Growth. 519, p. 77-83 7 p.

Research output: Contribution to journalArticle

Open Access
2 Citations (Scopus)
2018

3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., May 1 2018, In : Crystal Research and Technology. 53, 5, 1700246.

Research output: Contribution to journalArticle

2 Citations (Scopus)

3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., Feb 1 2018, In : Journal of Crystal Growth. 483, p. 269-274 6 p.

Research output: Contribution to journalArticle

Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation

Ishikawa, Y., Tajima, M., Kiuchi, H., Ogura, A., Miyamura, Y., Harada, H. & Kakimoto, K., Aug 1 2018, In : Japanese Journal of Applied Physics. 57, 8, 08RB06.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?

Miyamura, Y., Harada, H., Nakano, S., Nishizawa, S. & Kakimoto, K., May 1 2018, In : Journal of Crystal Growth. 489, p. 1-4 4 p.

Research output: Contribution to journalArticle

Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth

Liu, X., Han, X. F., Nakano, S. & Kakimoto, K., Feb 1 2018, In : Journal of Crystal Growth. 483, p. 241-244 4 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Effect of oxygen on dislocation multiplication in silicon crystals

Fukushima, W., Harada, H., Miyamura, Y., Imai, M., Nakano, S. & Kakimoto, K., Mar 15 2018, In : Journal of Crystal Growth. 486, p. 45-49 5 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth

Kawamura, T., Kitamoto, A., Imade, M., Yoshimura, M., Mori, Y., Morikawa, Y., Kangawa, Y., Kakimoto, K. & Akiyama, T., Nov 1 2018, In : Japanese Journal of Applied Physics. 57, 11, 115504.

Research output: Contribution to journalArticle

Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. & Kakimoto, K., Oct 1 2018, In : Journal of Crystal Growth. 499, p. 8-12 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Relationship between carbon concentration and carrier lifetime in CZ-Si crystals

Miyamura, Y., Harada, H., Nakano, S., Nishizawa, S. & Kakimoto, K., Mar 15 2018, In : Journal of Crystal Growth. 486, p. 56-59 4 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Relationship between dislocation density and oxygen concentration in silicon crystals during directional solidification

Ide, T., Harada, H., Miyamura, Y., Imai, M., Nakano, S. & Kakimoto, K., Jun 7 2018, In : Crystals. 8, 6, 244.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

Sekiguchi, K., Shirakawa, H., Chokawa, K., Araidai, M., Kangawa, Y., Kakimoto, K. & Shiraishi, K., Apr 2018, In : Japanese Journal of Applied Physics. 57, 4, 04FJ03.

Research output: Contribution to journalArticle

8 Citations (Scopus)
2017

Chairpersons’ preface

Kakimoto, K. & Arakawa, Y., Jun 15 2017, In : Journal of Crystal Growth. 468, p. 1-3 3 p.

Research output: Contribution to journalEditorial

Development of carbon transport and modeling in Czochralski silicon crystal growth

Liu, X., Nakano, S. & Kakimoto, K., Jan 1 2017, In : Crystal Research and Technology. 52, 1, 1600221.

Research output: Contribution to journalArticle

3 Citations (Scopus)

DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1 ) metalorganic vapor phase epitaxy

Kempisty, P., Kangawa, Y., Kusaba, A., Shiraishi, K., Krukowski, S., Bockowski, M., Kakimoto, K. & Amano, H., Oct 2 2017, In : Applied Physics Letters. 111, 14, 141602.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth

Liu, X., Nakano, S. & Kakimoto, K., Jun 15 2017, In : Journal of Crystal Growth. 468, p. 595-600 6 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

First principles and themodynamical studies on matel organic vaper phase epitaxy of GaN

Shiraishi, K., Sekiguchi, K., Shirakawa, H., Chokawa, K., Araidai, M., Kangawa, Y. & Kakimoto, K., Jan 1 2017, ECS Transactions. Misra, D., De Gendt, S., Housa, M., Kita, K. & Landheer, D. (eds.). 1 ed. Electrochemical Society Inc., p. 295-301 7 p. (ECS Transactions; vol. 80, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN

Sekiguchi, K., Shirakawa, H., Yamamoto, Y., Araidai, M., Kangawa, Y., Kakimoto, K. & Shiraishi, K., Jun 15 2017, In : Journal of Crystal Growth. 468, p. 950-953 4 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

First-principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions

Kawamura, T., Kitamoto, A., Imade, M., Yoshimura, M., Mori, Y., Morikawa, Y., Kangawa, Y. & Kakimoto, K., Aug 2017, In : Physica Status Solidi (B) Basic Research. 254, 8, 1600706.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy

Inatomi, Y., Kangawa, Y., Kakimoto, K. & Koukitu, A., Mar 2017, In : Japanese Journal of Applied Physics. 56, 3, 038002.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process

Nakano, S., Gao, B. & Kakimoto, K., Jun 15 2017, In : Journal of Crystal Growth. 468, p. 839-844 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells

Nakano, S., Gao, B., Jiptner, K., Harada, H., Miyamura, Y., Sekiguchi, T., Fukuzawa, M. & Kakimoto, K., Sep 15 2017, In : Journal of Crystal Growth. 474, p. 130-134 5 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

On the phase transformation of single-crystal 4H-SiC during nanoindentation

Matsumoto, M., Huang, H., Harada, H., Kakimoto, K. & Yan, J., Jun 12 2017, In : Journal of Physics D: Applied Physics. 50, 26, 265303.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Recent developments of numerical calculation in crystal growth of SiC

Kakimoto, K. & Nakano, S., Jan 1 2017, In : Journal of the Vacuum Society of Japan. 60, 8, p. 313-320 8 p.

Research output: Contribution to journalReview article

Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth

Liu, X., Gao, B., Nakano, S. & Kakimoto, K., Sep 15 2017, In : Journal of Crystal Growth. 474, p. 3-7 5 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Silicon bulk growth for solar cells: Science and technology

Kakimoto, K., Gao, B., Nakano, S., Harada, H. & Miyamura, Y., Feb 2017, In : Japanese Journal of Applied Physics. 56, 2, 020101.

Research output: Contribution to journalReview article

5 Citations (Scopus)

Study on the usage of a commercial software (Comsol-Multiphysics®) for dislocation multiplication model

Gallien, B., Albaric, M., Duffar, T., Kakimoto, K. & M'Hamdi, M., Jan 1 2017, In : Journal of Crystal Growth. 457, p. 60-64 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth

Inatomi, Y., Kangawa, Y., Ito, T., Suski, T., Kumagai, Y., Kakimoto, K. & Koukitu, A., Jul 2017, In : Japanese Journal of Applied Physics. 56, 7, 078003.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Thermodynamic analysis of (0001) and (0001) GaN metalorganic vapor phase epitaxy

Kusaba, A., Kangawa, Y., Kempisty, P., Valencia, H., Shiraishi, K., Kumagai, Y., Kakimoto, K. & Koukitu, A., Jul 2017, In : Japanese Journal of Applied Physics. 56, 7, 070304.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy

Sekiguchi, K., Shirakawa, H., Chokawa, K., Araidai, M., Kangawa, Y., Kakimoto, K. & Shiraishi, K., Apr 2017, In : Japanese Journal of Applied Physics. 56, 4, 04CJ04.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

Gao, B., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., Sep 15 2017, In : Journal of Crystal Growth. 474, p. 121-129 9 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
2016

50 cm size seed cast Si ingot growth and its characterization

Sekiguchi, T., Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., Nakano, S., Gao, B. & Kakimoto, K., Jan 1 2016, Gettering and Defect Engineering in Semiconductor Technology XVI. Pichler, P. & Pichler, P. (eds.). Trans Tech Publications Ltd, p. 30-34 5 p. (Solid State Phenomena; vol. 242).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
10 Citations (Scopus)

Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation

Jiptner, K., Miyamura, Y., Harada, H., Gao, B., Kakimoto, K. & Sekiguchi, T., Dec 1 2016, In : Progress in Photovoltaics: Research and Applications. 24, 12, p. 1513-1522 10 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Growth of semiconductor silicon crystals

Kakimoto, K., Gao, B., Liu, X. & Nakano, S., Jun 1 2016, In : Progress in Crystal Growth and Characterization of Materials. 62, 2, p. 273-285 13 p.

Research output: Contribution to journalReview article

7 Citations (Scopus)

Orientation dependency of dislocation generation in Si growth process

Jiptner, K., Miyamura, Y., Gao, B., Harada, H., Kakimoto, K. & Sekiguchi, T., Jan 1 2016, Gettering and Defect Engineering in Semiconductor Technology XVI. Pichler, P. & Pichler, P. (eds.). Trans Tech Publications Ltd, p. 15-20 6 p. (Solid State Phenomena; vol. 242).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics

Kawamura, T., Mizutani, M., Suzuki, Y., Kangawa, Y. & Kakimoto, K., Mar 2016, In : Japanese Journal of Applied Physics. 55, 3, 031301.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy

Kusaba, A., Kangawa, Y., Honda, Y., Amano, H. & Kakimoto, K., May 2016, In : Japanese Journal of Applied Physics. 55, 5, 05FM01.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory

Araki, S., Gao, B., Nishizawa, S., Nakano, S. & Kakimoto, K., May 1 2016, In : Crystal Research and Technology. 51, 5, p. 344-348 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)