TY - JOUR
T1 - A 10.3 Gb/s burst-mode CDR Using a ΔΣ DAC
AU - Terada, Jun
AU - Nishimura, Kazuyoshi
AU - Kimura, Shunji
AU - Katsurai, Hiroaki
AU - Yoshimoto, Naoto
AU - Ohtomo, Yusuke
N1 - Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2008/12
Y1 - 2008/12
N2 - A burst-mode clock and data recovery circuit (CDR) for 10G-EPON systems is described. We propose a new architecture with a single gated voltage-controlled oscillator (GVCO), a digital frequency detector, and aDeltaSigma digital-to-analog converter (DAC). The single GVCO and detector reduce frequency error to less than 2 MHz. The \DeltaSigma DAC eliminates external devices. Moreover, the simulation results show the DAC is more tolerant to process, voltage, and temperature (PVT) variations than a conventional charge pump. We fabricated a test CDR with this architecture using the 0.25 μ m SiGe BiCMOS process. The measurement results show root-mean-square (rms) and total jitter of the recovered data of 2.4 and 14.7 ps, respectively, instantaneous locking in 1 bit, tolerance to a 160-bit sequence without transition in the data, and jitter tolerance of over 0.27 UIpp.
AB - A burst-mode clock and data recovery circuit (CDR) for 10G-EPON systems is described. We propose a new architecture with a single gated voltage-controlled oscillator (GVCO), a digital frequency detector, and aDeltaSigma digital-to-analog converter (DAC). The single GVCO and detector reduce frequency error to less than 2 MHz. The \DeltaSigma DAC eliminates external devices. Moreover, the simulation results show the DAC is more tolerant to process, voltage, and temperature (PVT) variations than a conventional charge pump. We fabricated a test CDR with this architecture using the 0.25 μ m SiGe BiCMOS process. The measurement results show root-mean-square (rms) and total jitter of the recovered data of 2.4 and 14.7 ps, respectively, instantaneous locking in 1 bit, tolerance to a 160-bit sequence without transition in the data, and jitter tolerance of over 0.27 UIpp.
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U2 - 10.1109/JSSC.2008.2006229
DO - 10.1109/JSSC.2008.2006229
M3 - Article
AN - SCOPUS:57849107741
SN - 0018-9200
VL - 43
SP - 2921
EP - 2928
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
IS - 12
M1 - 4684637
ER -