A 120-W boost converter operation using a high-voltage GaN-HEMT

Wataru Saito; Tomohiro Nitta; Yorito Kakiuchi; Yasunobu Saito; Kunio Tsuda; Ichiro Omura; Masakazu Yamaguchi

doi:10.1109/LED.2007.910796

A 120-W boost converter operation using a high-voltage GaN-HEMT

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura, Masakazu Yamaguchi

Research output: Contribution to journal › Article › peer-review

101 Citations (Scopus)

Abstract

A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a power efficiency of 94.2% under a drain peak voltage as high as 350 V and a switching frequency of 1 MHz. The dual field-plate structure realized high-voltage switching operation with high power efficiency as dynamic on-resistance was suppressed by an increase of the current collapse phenomena.

Original language	English
Pages (from-to)	8-10
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	1
DOIs	https://doi.org/10.1109/LED.2007.910796
Publication status	Published - Jan 1 2008
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2007.910796

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@article{b6d780a1b915457fb8d73659b18588c6,

title = "A 120-W boost converter operation using a high-voltage GaN-HEMT",

abstract = "A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a power efficiency of 94.2% under a drain peak voltage as high as 350 V and a switching frequency of 1 MHz. The dual field-plate structure realized high-voltage switching operation with high power efficiency as dynamic on-resistance was suppressed by an increase of the current collapse phenomena.",

author = "Wataru Saito and Tomohiro Nitta and Yorito Kakiuchi and Yasunobu Saito and Kunio Tsuda and Ichiro Omura and Masakazu Yamaguchi",

year = "2008",

month = jan,

day = "1",

doi = "10.1109/LED.2007.910796",

language = "English",

volume = "29",

pages = "8--10",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - A 120-W boost converter operation using a high-voltage GaN-HEMT

AU - Saito, Wataru

AU - Nitta, Tomohiro

AU - Kakiuchi, Yorito

AU - Saito, Yasunobu

AU - Tsuda, Kunio

AU - Omura, Ichiro

AU - Yamaguchi, Masakazu

PY - 2008/1/1

Y1 - 2008/1/1

N2 - A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a power efficiency of 94.2% under a drain peak voltage as high as 350 V and a switching frequency of 1 MHz. The dual field-plate structure realized high-voltage switching operation with high power efficiency as dynamic on-resistance was suppressed by an increase of the current collapse phenomena.

AB - A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a power efficiency of 94.2% under a drain peak voltage as high as 350 V and a switching frequency of 1 MHz. The dual field-plate structure realized high-voltage switching operation with high power efficiency as dynamic on-resistance was suppressed by an increase of the current collapse phenomena.

UR - http://www.scopus.com/inward/record.url?scp=37549010679&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37549010679&partnerID=8YFLogxK

U2 - 10.1109/LED.2007.910796

DO - 10.1109/LED.2007.910796

M3 - Article

AN - SCOPUS:37549010679

VL - 29

SP - 8

EP - 10

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

ER -

A 120-W boost converter operation using a high-voltage GaN-HEMT

Abstract

All Science Journal Classification (ASJC) codes

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