A 120-W boost converter operation using a high-voltage GaN-HEMT

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura, Masakazu Yamaguchi

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101 Citations (Scopus)


A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a power efficiency of 94.2% under a drain peak voltage as high as 350 V and a switching frequency of 1 MHz. The dual field-plate structure realized high-voltage switching operation with high power efficiency as dynamic on-resistance was suppressed by an increase of the current collapse phenomena.

Original languageEnglish
Pages (from-to)8-10
Number of pages3
JournalIEEE Electron Device Letters
Issue number1
Publication statusPublished - Jan 1 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Saito, W., Nitta, T., Kakiuchi, Y., Saito, Y., Tsuda, K., Omura, I., & Yamaguchi, M. (2008). A 120-W boost converter operation using a high-voltage GaN-HEMT. IEEE Electron Device Letters, 29(1), 8-10. https://doi.org/10.1109/LED.2007.910796