A 15.5mΩcm2-680V superjunction MOSFET reduced on-resistance by lateral pitch narrowing

Wataru Saito; Ichiro Omura; Satoshi Aida; Shigeo Koduki; Masaru Izumisawa; Hironori Yoshioka; Hideki Okumura; Masakazu Yamaguchi; Tsuneo Ogura

A 15.5mΩcm²-680V superjunction MOSFET reduced on-resistance by lateral pitch narrowing

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka, Hideki Okumura, Masakazu Yamaguchi, Tsuneo Ogura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

43 Citations (Scopus)

Abstract

Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mΩcm² were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 μm for the onresistance reduction. The demonstrated onresistance is the lowest one among previously reported 600 V-class SJ-MOSFETs. The fabricated MOSFET also realized low RonQgd of 1.8 ΩnC and high avalanche current of 175 A/cm².

Original language	English
Title of host publication	Proceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
Publication status	Published - Dec 1 2006
Externally published	Yes
Event	18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06 - Naples, Italy Duration: Jun 4 2006 → Jun 8 2006

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2006
ISSN (Print)	1063-6854

Conference

Conference	18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
Country/Territory	Italy
City	Naples
Period	6/4/06 → 6/8/06

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Saito, W., Omura, I., Aida, S., Koduki, S., Izumisawa, M., Yoshioka, H., Okumura, H., Yamaguchi, M., & Ogura, T. (2006). A 15.5mΩcm²-680V superjunction MOSFET reduced on-resistance by lateral pitch narrowing. In Proceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06 [1666129] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2006).

A 15.5mΩcm²-680V superjunction MOSFET reduced on-resistance by lateral pitch narrowing. / Saito, Wataru; Omura, Ichiro; Aida, Satoshi et al.

Proceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06. 2006. 1666129 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saito, W, Omura, I, Aida, S, Koduki, S, Izumisawa, M, Yoshioka, H, Okumura, H, Yamaguchi, M & Ogura, T 2006, A 15.5mΩcm²-680V superjunction MOSFET reduced on-resistance by lateral pitch narrowing. in Proceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06., 1666129, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2006, 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06, Naples, Italy, 6/4/06.

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abstract = "Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mΩcm2 were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 μm for the onresistance reduction. The demonstrated onresistance is the lowest one among previously reported 600 V-class SJ-MOSFETs. The fabricated MOSFET also realized low RonQgd of 1.8 ΩnC and high avalanche current of 175 A/cm2.",

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AU - Saito, Wataru

AU - Omura, Ichiro

AU - Aida, Satoshi

AU - Koduki, Shigeo

AU - Izumisawa, Masaru

AU - Yoshioka, Hironori

AU - Okumura, Hideki

AU - Yamaguchi, Masakazu

AU - Ogura, Tsuneo

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N2 - Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mΩcm2 were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 μm for the onresistance reduction. The demonstrated onresistance is the lowest one among previously reported 600 V-class SJ-MOSFETs. The fabricated MOSFET also realized low RonQgd of 1.8 ΩnC and high avalanche current of 175 A/cm2.

AB - Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mΩcm2 were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 μm for the onresistance reduction. The demonstrated onresistance is the lowest one among previously reported 600 V-class SJ-MOSFETs. The fabricated MOSFET also realized low RonQgd of 1.8 ΩnC and high avalanche current of 175 A/cm2.

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