A 15.5mΩcm2-680V superjunction MOSFET reduced on-resistance by lateral pitch narrowing

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka, Hideki Okumura, Masakazu Yamaguchi, Tsuneo Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

36 Citations (Scopus)

Abstract

Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mΩcm2 were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 μm for the onresistance reduction. The demonstrated onresistance is the lowest one among previously reported 600 V-class SJ-MOSFETs. The fabricated MOSFET also realized low RonQgd of 1.8 ΩnC and high avalanche current of 175 A/cm2.

Original languageEnglish
Title of host publicationProceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
Publication statusPublished - Dec 1 2006
Externally publishedYes
Event18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06 - Naples, Italy
Duration: Jun 4 2006Jun 8 2006

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2006
ISSN (Print)1063-6854

Conference

Conference18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
CountryItaly
CityNaples
Period6/4/066/8/06

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Saito, W., Omura, I., Aida, S., Koduki, S., Izumisawa, M., Yoshioka, H., Okumura, H., Yamaguchi, M., & Ogura, T. (2006). A 15.5mΩcm2-680V superjunction MOSFET reduced on-resistance by lateral pitch narrowing. In Proceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06 [1666129] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2006).