TY - GEN
T1 - A 15.5mΩcm2-680V superjunction MOSFET reduced on-resistance by lateral pitch narrowing
AU - Saito, Wataru
AU - Omura, Ichiro
AU - Aida, Satoshi
AU - Koduki, Shigeo
AU - Izumisawa, Masaru
AU - Yoshioka, Hironori
AU - Okumura, Hideki
AU - Yamaguchi, Masakazu
AU - Ogura, Tsuneo
PY - 2006/12/1
Y1 - 2006/12/1
N2 - Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mΩcm2 were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 μm for the onresistance reduction. The demonstrated onresistance is the lowest one among previously reported 600 V-class SJ-MOSFETs. The fabricated MOSFET also realized low RonQgd of 1.8 ΩnC and high avalanche current of 175 A/cm2.
AB - Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mΩcm2 were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 μm for the onresistance reduction. The demonstrated onresistance is the lowest one among previously reported 600 V-class SJ-MOSFETs. The fabricated MOSFET also realized low RonQgd of 1.8 ΩnC and high avalanche current of 175 A/cm2.
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M3 - Conference contribution
AN - SCOPUS:34247519271
SN - 0780397142
SN - 9780780397149
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
BT - Proceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
T2 - 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
Y2 - 4 June 2006 through 8 June 2006
ER -