A-193 (dBc/Hz) FoM and -126 (dBc/Hz) phase noise octagonal ring oscillator using pulse injection technique

K. Yousef, Hongting Jia, A. Allam, Ramesh Pokharel, A. Abdel-Rahman, Haruichi Kanaya

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

This manuscript presents the design of a low phase noise, high figure of merit (FoM) single-ended octagonal ring oscillator (RO). The proposed RO employs the pulse injection (PI) technique for performance enhancement. The PI technique is used for suppression of phase noise and spurious harmonics. Besides, a novel voltage dependent phase shifter is employed. The proposed RO has an output signal with voltage controlled phase. Different output signal phases can be obtained employing different selected voltages to control the output signal phase. The proposed injection locked ring oscillator (ILRO) represents a suitable implementation for phase shift keying. The proposed ILRO has a measured oscillation frequency of 4.9 GHz with a fine tuning range of 500 MHz. It has a measured phase noise of -126.17 dBc/Hz @ 1MHz offset while consuming only 4.8 mW of DC power. The proposed ILRO has a FoM of -193.17 dBc/Hz. This RO has been designed and implemented in 0.18 μm CMOS technology.

Original languageEnglish
Pages (from-to)1760-1762
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume58
Issue number7
DOIs
Publication statusPublished - Jul 1 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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