Abstract
This paper presents the design of a 2-16 GHz ultra wide band low noise amplifier (UWB LNA). The proposed LNA has a gain of 11.5 ± 0.85 dB with NF less than 2.82 dB. Good input and output impedance matching, good isolation and linearity are achieved over the operating frequency band. The proposed UWB LNA consumes 18.14 mW of power from 1.8V supply. This UWB LNA is designed and simulated in 0.18 μm CMOS process.
| Original language | English |
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| Title of host publication | Saudi International Electronics, Communications and Photonics Conference 2011, SIECPC 2011 |
| DOIs | |
| Publication status | Published - Jul 11 2011 |
| Event | Saudi International Electronics, Communications and Photonics Conference 2011, SIECPC 2011 - Riyadh, Saudi Arabia Duration: Apr 23 2011 → Apr 26 2011 |
Publication series
| Name | Saudi International Electronics, Communications and Photonics Conference 2011, SIECPC 2011 |
|---|
Other
| Other | Saudi International Electronics, Communications and Photonics Conference 2011, SIECPC 2011 |
|---|---|
| Country | Saudi Arabia |
| City | Riyadh |
| Period | 4/23/11 → 4/26/11 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
A 2-16 GHz CMOS current reuse cascaded ultra-wideband low noise amplifier. / Yousef, K.; Jia, Hongting; Pokharel, Ramesh; Allam, A.; Ragab, M.; Yoshida, K.
Saudi International Electronics, Communications and Photonics Conference 2011, SIECPC 2011. 2011. 5876910 (Saudi International Electronics, Communications and Photonics Conference 2011, SIECPC 2011).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A 2-16 GHz CMOS current reuse cascaded ultra-wideband low noise amplifier
AU - Yousef, K.
AU - Jia, Hongting
AU - Pokharel, Ramesh
AU - Allam, A.
AU - Ragab, M.
AU - Yoshida, K.
PY - 2011/7/11
Y1 - 2011/7/11
N2 - This paper presents the design of a 2-16 GHz ultra wide band low noise amplifier (UWB LNA). The proposed LNA has a gain of 11.5 ± 0.85 dB with NF less than 2.82 dB. Good input and output impedance matching, good isolation and linearity are achieved over the operating frequency band. The proposed UWB LNA consumes 18.14 mW of power from 1.8V supply. This UWB LNA is designed and simulated in 0.18 μm CMOS process.
AB - This paper presents the design of a 2-16 GHz ultra wide band low noise amplifier (UWB LNA). The proposed LNA has a gain of 11.5 ± 0.85 dB with NF less than 2.82 dB. Good input and output impedance matching, good isolation and linearity are achieved over the operating frequency band. The proposed UWB LNA consumes 18.14 mW of power from 1.8V supply. This UWB LNA is designed and simulated in 0.18 μm CMOS process.
UR - http://www.scopus.com/inward/record.url?scp=79959979881&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79959979881&partnerID=8YFLogxK
U2 - 10.1109/SIECPC.2011.5876910
DO - 10.1109/SIECPC.2011.5876910
M3 - Conference contribution
AN - SCOPUS:79959979881
SN - 9781457700699
T3 - Saudi International Electronics, Communications and Photonics Conference 2011, SIECPC 2011
BT - Saudi International Electronics, Communications and Photonics Conference 2011, SIECPC 2011
ER -