A 20mΩcm2 600 V-class super junction MOSFET

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka, Tsuneo Ogura

Research output: Contribution to conferencePaperpeer-review

46 Citations (Scopus)

Abstract

Superjunction (SJ) MOSFETs with extremely low on-resistance and high avalanche withstanding capability have been designed and experimentally demonstrated. The p- and n-columns for the SJ structure are designed to reduce the on-resistance and to maximize both the breakdown voltage and the avalanche withstanding capability. The demonstrated SJ-MOSFET realized the lowest on-resistance of 20∼mΩcm2 among previously reported 600 V-class SJ-MOSFETs. The device also withstands high avalanche current of 185∼A/cm2.

Original languageEnglish
Pages459-462
Number of pages4
Publication statusPublished - Oct 18 2004
Externally publishedYes
EventProceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) - Kitakyushu, Japan
Duration: May 24 2004May 27 2004

Conference

ConferenceProceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04)
CountryJapan
CityKitakyushu
Period5/24/045/27/04

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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