A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors

S. A Z Murad; Ramesh Pokharel; Haruichi Kanaya; K. Yoshida

doi:10.1109/SMIC.2010.5422842

A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors

S. A Z Murad, Ramesh Pokharel, Haruichi Kanaya, K. Yoshida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for wireless applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper realizes all inductors with bondwires for the higher quality factor to increase PA performance and to reduce chip size. The single-ended topology is employed because most existing components designed to be driven by PAs are single-ended. The cascode topology with a self-biasing technique is used to prevent device stress and to decrease the requirement for additional bond pads. The measurement results indicate that the PA delivers 19.2 dBm output power and 27.8% power added efficiency with 3.3-V power supply into a 50 Ω load. The chip area is 0.37 mm².

Original language	English
Title of host publication	2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers
Pages	25-28
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2010.5422842
Publication status	Published - 2010
Event	2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - New Orleans, LA, United States Duration: Jan 11 2010 → Jan 13 2010

Other

Other	2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010
Country/Territory	United States
City	New Orleans, LA
Period	1/11/10 → 1/13/10

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/SMIC.2010.5422842

Cite this

A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors. / Murad, S. A Z; Pokharel, Ramesh ; Kanaya, Haruichi; Yoshida, K.

2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers. 2010. p. 25-28 5422842.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Murad, SAZ, Pokharel, R , Kanaya, H & Yoshida, K 2010, A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors. in 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers., 5422842, pp. 25-28, 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010, New Orleans, LA, United States, 1/11/10. https://doi.org/10.1109/SMIC.2010.5422842

@inproceedings{6174685cc3e5440eb23bcf7e07ad98ac,

title = "A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors",

abstract = "This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for wireless applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper realizes all inductors with bondwires for the higher quality factor to increase PA performance and to reduce chip size. The single-ended topology is employed because most existing components designed to be driven by PAs are single-ended. The cascode topology with a self-biasing technique is used to prevent device stress and to decrease the requirement for additional bond pads. The measurement results indicate that the PA delivers 19.2 dBm output power and 27.8% power added efficiency with 3.3-V power supply into a 50 Ω load. The chip area is 0.37 mm2.",

author = "Murad, {S. A Z} and Ramesh Pokharel and Haruichi Kanaya and K. Yoshida",

year = "2010",

doi = "10.1109/SMIC.2010.5422842",

language = "English",

isbn = "9781424454587",

pages = "25--28",

booktitle = "2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers",

note = "2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 ; Conference date: 11-01-2010 Through 13-01-2010",

}

TY - GEN

T1 - A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors

AU - Murad, S. A Z

AU - Pokharel, Ramesh

AU - Kanaya, Haruichi

AU - Yoshida, K.

PY - 2010

Y1 - 2010

N2 - This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for wireless applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper realizes all inductors with bondwires for the higher quality factor to increase PA performance and to reduce chip size. The single-ended topology is employed because most existing components designed to be driven by PAs are single-ended. The cascode topology with a self-biasing technique is used to prevent device stress and to decrease the requirement for additional bond pads. The measurement results indicate that the PA delivers 19.2 dBm output power and 27.8% power added efficiency with 3.3-V power supply into a 50 Ω load. The chip area is 0.37 mm2.

AB - This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for wireless applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper realizes all inductors with bondwires for the higher quality factor to increase PA performance and to reduce chip size. The single-ended topology is employed because most existing components designed to be driven by PAs are single-ended. The cascode topology with a self-biasing technique is used to prevent device stress and to decrease the requirement for additional bond pads. The measurement results indicate that the PA delivers 19.2 dBm output power and 27.8% power added efficiency with 3.3-V power supply into a 50 Ω load. The chip area is 0.37 mm2.

UR - http://www.scopus.com/inward/record.url?scp=77951030251&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951030251&partnerID=8YFLogxK

U2 - 10.1109/SMIC.2010.5422842

DO - 10.1109/SMIC.2010.5422842

M3 - Conference contribution

AN - SCOPUS:77951030251

SN - 9781424454587

SP - 25

EP - 28

BT - 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers

T2 - 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010

Y2 - 11 January 2010 through 13 January 2010

ER -

A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors

Abstract

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this