Abstract
This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for wireless applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper realizes all inductors with bondwires for the higher quality factor to increase PA performance and to reduce chip size. The single-ended topology is employed because most existing components designed to be driven by PAs are single-ended. The cascode topology with a self-biasing technique is used to prevent device stress and to decrease the requirement for additional bond pads. The measurement results indicate that the PA delivers 19.2 dBm output power and 27.8% power added efficiency with 3.3-V power supply into a 50 Ω load. The chip area is 0.37 mm2.
Original language | English |
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Title of host publication | 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers |
Pages | 25-28 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 2010 |
Event | 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - New Orleans, LA, United States Duration: Jan 11 2010 → Jan 13 2010 |
Other
Other | 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 |
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Country | United States |
City | New Orleans, LA |
Period | 1/11/10 → 1/13/10 |
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering