A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors

S. A Z Murad; Ramesh Pokharel; Haruichi Kanaya; K. Yoshida

doi:10.1109/SMIC.2010.5422842

A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors

S. A Z Murad, Ramesh Pokharel, Haruichi Kanaya, K. Yoshida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Citations (Scopus)

Abstract

This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for wireless applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper realizes all inductors with bondwires for the higher quality factor to increase PA performance and to reduce chip size. The single-ended topology is employed because most existing components designed to be driven by PAs are single-ended. The cascode topology with a self-biasing technique is used to prevent device stress and to decrease the requirement for additional bond pads. The measurement results indicate that the PA delivers 19.2 dBm output power and 27.8% power added efficiency with 3.3-V power supply into a 50 Ω load. The chip area is 0.37 mm².

Original language	English
Title of host publication	2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers
Pages	25-28
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2010.5422842
Publication status	Published - 2010
Event	2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - New Orleans, LA, United States Duration: Jan 11 2010 → Jan 13 2010

Other

Other	2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010
Country/Territory	United States
City	New Orleans, LA
Period	1/11/10 → 1/13/10

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/SMIC.2010.5422842

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A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors. / Murad, S. A Z; Pokharel, Ramesh ; Kanaya, Haruichi et al.

2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers. 2010. p. 25-28 5422842.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Murad, SAZ, Pokharel, R , Kanaya, H & Yoshida, K 2010, A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors. in 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers., 5422842, pp. 25-28, 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010, New Orleans, LA, United States, 1/11/10. https://doi.org/10.1109/SMIC.2010.5422842

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abstract = "This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for wireless applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper realizes all inductors with bondwires for the higher quality factor to increase PA performance and to reduce chip size. The single-ended topology is employed because most existing components designed to be driven by PAs are single-ended. The cascode topology with a self-biasing technique is used to prevent device stress and to decrease the requirement for additional bond pads. The measurement results indicate that the PA delivers 19.2 dBm output power and 27.8% power added efficiency with 3.3-V power supply into a 50 Ω load. The chip area is 0.37 mm2.",

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N2 - This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for wireless applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper realizes all inductors with bondwires for the higher quality factor to increase PA performance and to reduce chip size. The single-ended topology is employed because most existing components designed to be driven by PAs are single-ended. The cascode topology with a self-biasing technique is used to prevent device stress and to decrease the requirement for additional bond pads. The measurement results indicate that the PA delivers 19.2 dBm output power and 27.8% power added efficiency with 3.3-V power supply into a 50 Ω load. The chip area is 0.37 mm2.

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A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors

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