Abstract
This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for WLAN applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper employs cascode topology with a self-biasing technique to prevent device stress and to decrease the requirement for additional bond pads. Further, all inductors are realized by bondwires for high PA performance. The post-layout simulation results indicate that the PA delivers 23 dBm output power and 44.5% power added efficiency with 3.3 V power supply into a 50 Ω load.
| Original language | English |
|---|---|
| Pages (from-to) | 813-818 |
| Number of pages | 6 |
| Journal | AEU - International Journal of Electronics and Communications |
| Volume | 64 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - Sep 1 2010 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
A 2.4-GHz 0.18-μm CMOS Class E single-ended switching power amplifier with a self-biased cascode. / Zainol Murad, Sohiful Anuar; Pokharel, Ramesh; Kanaya, Haruichi; Yoshida, Keiji; Nizhnik, Oleg.
In: AEU - International Journal of Electronics and Communications, Vol. 64, No. 9, 01.09.2010, p. 813-818.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A 2.4-GHz 0.18-μm CMOS Class E single-ended switching power amplifier with a self-biased cascode
AU - Zainol Murad, Sohiful Anuar
AU - Pokharel, Ramesh
AU - Kanaya, Haruichi
AU - Yoshida, Keiji
AU - Nizhnik, Oleg
PY - 2010/9/1
Y1 - 2010/9/1
N2 - This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for WLAN applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper employs cascode topology with a self-biasing technique to prevent device stress and to decrease the requirement for additional bond pads. Further, all inductors are realized by bondwires for high PA performance. The post-layout simulation results indicate that the PA delivers 23 dBm output power and 44.5% power added efficiency with 3.3 V power supply into a 50 Ω load.
AB - This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for WLAN applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper employs cascode topology with a self-biasing technique to prevent device stress and to decrease the requirement for additional bond pads. Further, all inductors are realized by bondwires for high PA performance. The post-layout simulation results indicate that the PA delivers 23 dBm output power and 44.5% power added efficiency with 3.3 V power supply into a 50 Ω load.
UR - http://www.scopus.com/inward/record.url?scp=77954027491&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77954027491&partnerID=8YFLogxK
U2 - 10.1016/j.aeue.2009.06.002
DO - 10.1016/j.aeue.2009.06.002
M3 - Article
AN - SCOPUS:77954027491
VL - 64
SP - 813
EP - 818
JO - AEU - International Journal of Electronics and Communications
JF - AEU - International Journal of Electronics and Communications
SN - 1434-8411
IS - 9
ER -