単一走行キャリアフォトダイオードとInP HEMT識別器からなる40-Gbit/sモノリシック集積ディジタルOEICモジュール

Translated title of the contribution: A 40-Gbit/s Monolithic Digital OEIC Composed of Uni-Traveling-Carrier Photodiode and InP HEMT Decision Circuit

村田 浩一, 北林 博人, 清水 直文, 宮本 裕, 木村 俊二, 古田 知史, 渡邉 則之, 佐野 栄一

Research output: Contribution to journalArticle

Abstract

This paperpresents a deigital OEIC that is a monolithic combination of a uni-traveling-carrier photodiode (UTC-PD) and 0.1-μm InAlAs/InGaAs/InP HEMT decision circuit for broadband optical fiber communication systems. The fabricated chip is packaged as an OEIC module, and 40-Gbit/s error-free operation is confirmed for an RZ data stream at the clock rate of 40 GHz. The bit-error-performances of an optical receiver consisting of erbium doped fiber amplifiers and the OEIC module is also examined. The reciver sensitivity of -24.1 dBm is obtained for a 40-Gbit/s RZ opticalsignal.
Translated title of the contributionA 40-Gbit/s Monolithic Digital OEIC Composed of Uni-Traveling-Carrier Photodiode and InP HEMT Decision Circuit
Original languageJapanese
Pages (from-to)1-6
Number of pages6
JournalIEICE technical report
Volume100
Issue number405
Publication statusPublished - Oct 30 2000

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