Abstract
This paper describes the design of 5-GHz fully integrated CMOS class-E single-ended power amplifier (PA) for wireless transmitter applications in a 0.18-μm CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver amplifiers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0×1.3 mm2. The measurement results indicate that the PA delivers 16.4 dBm output power and 35.4 % power-added efficiency with 2.3 V power supply voltage into a 50 Ω load.
Original language | English |
---|---|
Title of host publication | Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 |
Pages | 237-239 |
Number of pages | 3 |
DOIs | |
Publication status | Published - 2012 |
Event | 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 - Singapore, Singapore Duration: Nov 21 2012 → Nov 23 2012 |
Other
Other | 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 |
---|---|
Country/Territory | Singapore |
City | Singapore |
Period | 11/21/12 → 11/23/12 |
All Science Journal Classification (ASJC) codes
- Computer Networks and Communications